R550_15 [HAMAMATSU]

300 nm to 850 nm Response (S-20) 51 mm (2 Inch) Diameter, 10-stage, Head-on Type;
R550_15
型号: R550_15
厂家: HAMAMATSU CORPORATION    HAMAMATSU CORPORATION
描述:

300 nm to 850 nm Response (S-20) 51 mm (2 Inch) Diameter, 10-stage, Head-on Type

文件: 总2页 (文件大小:51K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PHOTOMULTIPLIER TUBE  
R550  
300 nm to 850 nm Response (S-20)  
51 mm (2 Inch) Diameter, 10-stage, Head-on Type  
GENERAL  
Parameter  
Description / Value  
Unit  
nm  
nm  
mm  
Spectral Response  
Wavelength of Maximum Response  
300 to 850  
420  
Multialkali  
Material  
Minimum Effective Area  
Photocathode  
46  
Window Material  
Dynode  
Borosilicate glass  
Box and Grid  
10  
Structure  
Number of Stages  
Base  
14-pin base JEDEC No. B14-38  
-30 to +50  
-30 to +50  
E678-14W (Sold Separately)  
°C  
°C  
Operating Ambient Temperature  
Storage Temperature  
Suitable Socket  
MAXIMUM RATINGS (Absolute Maximum Values)  
Parameter  
Value  
1500  
250  
Unit  
V
V
Between Anode and Cathode  
Supply Voltage  
Between Anode and Last Dynode  
Average Anode Current  
0.3  
mA  
CHARACTERISTICS (at 25 °C)  
Parameter  
Min.  
100  
20  
Typ.  
150  
64  
0.2  
100  
4.3 × 104  
6.7 × 105  
10  
Max.  
30  
Unit  
µA/lm  
mA/W  
A/lm  
A/W  
nA  
ns  
ns  
Luminous (2856 K)  
Cathode Sensitivity  
Radiant at 420 nm  
Red/White Ratio (R-68)  
Luminous (2856 K)  
Radiant at 420 nm  
Anode Sensitivity  
Gain  
Anode Dark Current (after 30 minutes storage in darkness)  
Anode Pulse Rise Time  
Electron Transit Time  
9.0  
70  
Time Response  
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.  
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE  
Electrodes  
K
G
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10  
P
Ratio  
1
1
1
1
1
1
1
1
1
1
1
1
Supply Voltage: 1000 V, K: Cathode, G: Grid, Dy: Dynode, P: Anode  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2014 Hamamatsu Photonics K.K.  
PHOTOMULTIPLIER TUBE R550  
Figure 1: Typical Spectral Response  
Figure 2: Typical Gain Characteristics  
TPMHB0001EB  
TPMHB0599EB  
107  
100  
CATHODE  
RADIANT  
SENSITIVITY  
106  
105  
104  
103  
102  
10  
QUANTUM  
EFFICIENCY  
1
0.1  
0.01  
500  
700  
1000  
1500  
200  
400  
600  
800  
1000  
SUPPLY VOLTAGE (V)  
WAVELENGTH (nm)  
Figure 3: Dimensional Outline and  
Basing Diagram (Unit: mm)  
Figure 4: Accessories (Unit: mm)  
GSocket E678-14W  
GD-type Socket Assembly E1198-22  
(Sold separately)  
(Sold separately)  
51.0 0.5  
FACEPLATE  
46 MIN.  
19.8  
SOCKET  
PIN No.  
PMT  
SIGNAL GND  
SIGNAL  
PHOTO-  
11  
CATHODE  
OUTPUT  
RG-174/U  
(BLACK)  
P
R13  
R12  
R11  
R10  
R9  
C3  
DY10  
10  
9
C2  
C1  
DY9  
DY8  
DY7  
DY6  
DY5  
DY4  
DY3  
DY2  
DY1  
8
7
14 PIN BASE  
JEDEC  
No. B14-38  
6
: 10 k  
: 330 kΩ  
: 10 nF  
R1  
R8  
62  
56  
64.0 0.3  
56.0 0.3  
R2 to R13  
C1 to C3  
C4  
5
R7  
: 4.7 nF  
4
R6  
3
R5  
56.5 0.5  
2
R4  
DY7 DY8  
1
DY6  
DY9  
8
7
R3  
C4  
R1  
9
6
-HV  
G
K
13  
14  
* Pins are housed in the socket.  
DY5  
DY10  
10  
11  
12  
5
SHIELD CABLE  
(GRAY)  
R2  
DY4  
DY3  
P
4
HOUSING  
(METAL)  
POWER  
SUPPLY  
GND  
3
IC  
2
13  
G
1
14  
DY2  
*
E1198-22 is for the standard voltage distribution ratio.  
K
DY1  
** The housing is internally connected to the GND.  
*** High voltage shielded cable can be connected to a  
connector for RG-174/U.  
Bottom View  
(Basing Diagram)  
TPMHA0210EB  
TACCA0200EA  
TACCA0168EB  
* HAMAMATSU also provideshigh voltage power supply modules C11152 series .  
www.hamamatsu.com  
HAMAMATSU PHOTONICS K.K.  
HAMAMATSU PHOTONICS K.K., Electron Tube Division  
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205  
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com  
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de  
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr  
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: info@hamamatsu.co.uk  
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se  
TPMH1247E06  
AUG. 2014 IP  
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: info@hamamatsu.it  
China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: hpc@hamamatsu.com.cn  

相关型号:

R5510H

POWER MANAGEMENT ICs MARK INFORMATIONS ME-R5510H-0310
RICOH

R5510H001A

POWER MANAGEMENT ICs MARK INFORMATIONS ME-R5510H-0310
RICOH

R5510H002A

POWER MANAGEMENT ICs MARK INFORMATIONS ME-R5510H-0310
RICOH

R5510H002H

POWER MANAGEMENT ICs MARK INFORMATIONS ME-R5510H-0310
RICOH

R5510H002H-T1

Regulator
RICOH
RICOH
RICOH
RICOH

R5510H002K

POWER MANAGEMENT ICs MARK INFORMATIONS ME-R5510H-0310
RICOH

R5510H003A

POWER MANAGEMENT ICs MARK INFORMATIONS ME-R5510H-0310
RICOH

R5510H003B

POWER MANAGEMENT ICs MARK INFORMATIONS ME-R5510H-0310
RICOH

R5510H003C

POWER MANAGEMENT ICs MARK INFORMATIONS ME-R5510H-0310
RICOH