R10699_15 [HAMAMATSU]
PHOTOMULTIPLIER TUBE;
| 型号： | R10699_15 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | PHOTOMULTIPLIER TUBE |
| 文件： | 总4页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHOTOMULTIPLIER TUBE
R10699
High QE multialkali photocathode
28 mm (1-1/8 inch) diameter, 9-stage, Side-on type
FEATURES
GHigh sensitivity
Radiant
at 600 nm ...................................... 97 mA/W (Typ.)
at 780 nm ...................................... 63 mA/W (Typ.)
Quantum efficiency
at 600 nm ............................................. 20 % (Typ.)
at 780 nm ............................................. 10 % (Typ.)
Luminous .......................................... 650 µA/lm (Typ.)
GWide spectral response .................. 185 nm to 900 nm
GHigh signal to noise ratio
GPin compatible with 1-1/8 side-on PMTs
APPLICATIONS
GBiomedical analysis
Blood analyzer, Flow cytometer, DNA sequencer
GEnvironmental monitoring
NOx analyzer
GSpectroscopy
Figure 2: Typical spectral response
Fluorescence spectrometer, Raman spectrometer,
UV–VIS-NIR spectrometer
GMicroscopy
TPMSB0217EA
1000
CATHODE RADIANT
SENSITIVITY
100
10
Figure 1: Electro optical structure
LIGHT
QUANTUM
EFFICIENCY
PHOTOELECTRON
TRAJECTORIES
1
GLASS BULB
GRID
0.1
0.01
ANODE
9th DYNODE
100 200 300 400 500 600 700 800 900 1000
PHOTOCATHODE
2nd DYNODE
1st DYNODE
WAVELENGTH (nm)
TPMSC0024EA
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2015 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBE R10699
SPECIFICATIONS
GENERAL
NOTES
Parameter
Description / value
Unit
nm
nm
—
mm
—
—
—
pF
A:Averaged over any interval of 30 seconds maximum.
B:The light source is a tungsten filament lamp operated at a
distribution temperature of 2856 K. Supply voltage is 100 V
between the cathode and all other electrodes connected
together as anode.
Spectral response
Wavelength of maximum response
185 to 900
450
Multialkali
8 × 24
UV glass
Circular-cage
9
MateriaI
Minimum effective area
Photocathode
Window material
C:Red / White ratio is the quotient of the cathode current
measured using a red filter (Toshiba R-68) interposed
between the light source and the tube by the cathode
current measured with the filter removed under the same
conditions as Note B.
D:The value is cathode output current when a blue filter
(Corning CS 5-58 polished to 1/2 stock thickness) is
interposed between the light source and the tube under
the same condition as Note B.
Structure
Number of stages
Anode to last dynode
Dynode
Direct
4
interelectrode Anode to all other
capacitances electrodes
Base
6
pF
11-pin base JEDEC No. B11-88
Approx. 45
-30 to +50
-30 to +50
E678–11A (Sold separately)
E717–63 (Sold separately)
—
g
°C
°C
—
Weight
Operating ambient temperature
Storage temperature
SuitabIe socket
E:Measured with the same light source as Note B and with
the voltage distribution ratio shown in Table 1 below.
Table 1:Voltage distribution ratio
SuitabIe socket assembly
—
Electrodes
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
P
Ratio
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode
F: After 30 min Storage in Darkness
MAXIMUM RATINGS (Absolute maximum values)
G:The rise time is the time for the output pulse to rise from
10 % to 90 % of the peak amplitude when the entire
photocathode is illuminated by a delta function light pulse.
H:The electron transit time is the interval between the arrival
of delta function light pulse at the entrance window of the
tube and the time when the anode output reaches the
peak amplitube. In measurement, the whole photocathode
is illuminated.
Parameter
Value
1250
250
Unit
V
V
Supply Between anode and cathode
voltage Between anode and last dynode
Average anode current A
0.1
mA
I: Also called transit time jitter. This is the fluctuation in
electron transit time between individual pulses in the signal
photoelectron mode, and is defined as the FWHM of the
frequency distribution of electron transit times
CHARACTERISTlCS (at 25 °C)
Parameter
Min.
Typ.
20
10
650
97
63
Max.
—
—
—
—
—
—
—
Unit
%
%
µA/lm
mA/W
mA/W
—
Quantum at 600 nm
efficiency at 780 nm
Luminous B
—
—
620
—
—
—
Cathode
at 600 nm
at 780 nm
sensitivity Radiant
Red / white ratio C
0.43
15
Blue sensitivity index D
Luminous E
—
—
Anode
sensitivity
Gain E
1600
—
8500
1.3 × 107
2.0
—
—
10
A/lm
—
Anode dark current F
—
nA
(Supply voltage at 1 × 106 gain)
Anode pulse rise time G
Time
—
—
—
2.2
22
1.2
—
—
—
ns
ns
ns
Electron transit time H
response
I
Transit time spread (T.T.S.)
Figure 3: Typical temperature characteristics
of dark current
Figure 4: Anode luminous sensitivity and gain
characteristics
(at 1 × 106 gain, after 30 min storage in darkness)
TPMSB0050EB
TPMSB0218EA
105
108
107
100
TYPICAL GAIN
104
10
103
106
105
104
103
102
TYPICAL ANODE
SENSITIVITY
102
1
MINIMUM ANODE
SENSITIVITY
101
100
0.1
0.01
10-1
-30
-20
-10
0
+10 +20 +30 +40 +50
1000
500
700
1500
TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
Figure 5: Typical time response
Figure 6: Typical temperature coefficient
of anode sensitivity
TPMSB0052EB
TPMSB0053EC
4
100
3
TRANSIT TIME
2
1
0
10
-0.13
400
-0.25
RISE TIME
-1
-2
1
500
700
1000
200
600
1500
800
1000
SUPPLY VOLTAGE (V)
WAVELENGTH (nm)
PHOTOMULTIPLIER TUBE R10699
Figure 7: Dimensional outline and basing diagram (Unit: mm)
28.5 1.5
8 MIN.
PHOTOCATHODE
DY6
6
DY7
DY5
5
1
7
DY4
DY8
4
8
3
DY3
9 DY9
PHOTO -
CATHODE
2
10
P
DY2
11
K
DY1
DIRECTION OF LIGHT
3.25
6.0
Bottom View
(Basing Diagram)
2.5
3.5
32.2 0.5
Cross Section
11 PIN BASE
JEDEC No. B11-88
TPMSA0008EA
TPMSA0009EB
Figure 8: Accessories (Unit: mm) Sold separately
Socket E678-11A
D type socket assembly E717-63
49
SOCKET
PIN No.
5
PMT
38
SIGNAL GND
SIGNAL OUTPUT
RG-174/U(BLACK)
10
P
POWER SUPPLY GND
AWG22 (BLACK)
R10
R9
R8
R7
R6
R5
R4
R3
R2
R1
C3
C2
C1
DY9
DY8
DY7
DY6
DY5
DY4
DY3
DY2
DY1
9
8
38.0 0.3
49.0 0.3
5
7
29
29.0 0.3
6
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
5
4
31.0 0.5
HOUSING
3
(INSULATOR)
2
TACCA0064EA
POTTING
COMPOUND
1
K
-HV
11
AWG22 (VIOLET)
TACCA0002EH
* Hamamatsu also provides C4900 series compact high voltage power
supplies and C12597-01 series DP type socket assemblies which
incorporate a DC to DC converter type high voltage power supply.
Warning–Personal Safety Hazards
Electrical Shock–Operating voltages applied to this
device present a shock hazard.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K.
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: info@hamamatsu.co.uk
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se
TPMS1074E02
AUG. 2015 IP
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: info@hamamatsu.it
China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: hpc@hamamatsu.com.cn
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