P10090_15 [HAMAMATSU]

InAs photovoltaic detectors;


型号：	P10090_15
厂家：	HAMAMATSU CORPORATION
描述：	InAs photovoltaic detectors
文件：	总6页 (文件大小：212K)
中文：	中文翻译
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InAs photovoltaic detectors

P10090 series

P7163

Low noise, high reliability infrared detectors

(for 3 μm band)

InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors,

and also feature low noise, high speed and high reliability. P10090 series is a new family of InAs photovoltaic detectors that

deliver even lower noise than our convensional products (P8079 series).

Various types are available, including non-cooled type, thermoelectrically cooled type (P10090 series), and liquid nitrogen

cooled type (P7163) that delivers high performance.

Features

Applications

Low noise

Gas analysis

High detectivity (D*)

Laser detection

High reliability

Infrared spectrophotometry

Radiation thermometer

Available in multi-element arrays (custom product)

Options (sold separately)

Heatsink for one/two-stage TE-cooled type A3179-01

Temperature controller C1103-04

Infrared detector module with preamp C12492-210

Ampliﬁers for InAs photovoltaic detector

(P10090 series: C4159-06, P7163: C4159-05)

Structure/Absolute maximum ratings

Absolute maximum ratings

Nitrogen Photosensitive Thermoelectric Thermistor Reverse Operating

Dimensional

Storage

Maximum

outline/

Window

Type No.

Package

Cooling

hold time

area

cooler allowable

power

dissipatio

(mW)

voltage temperature temperature incident

current

(A)

Topr

(°C)

Tstg

(°C)

light level

(W)

(V)

material *¹

(h)

(mm)

P10090-01

P10090-11

ꢀ/S

ꢁ/S

ꢂ/S

TO-5

TO-8

Non-cooled

One-stage

TE-cooled

Two-stage

TE-cooled

LN2

1.5

ϕ1

-40 to +80

0.2

0.5

-40 to +60

0.6

P10090-21

P7163

1.0

Metal dewer

12 *²

ϕ1

-55 to +60

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

*1: S=Sapphire glass

*2: At the time of shipment

www.hamamatsu.com

InAs photovoltaic detectors

P10090 series, P7163

Electrical and optical characteristics (Typ. unless otherwise noted)

Measurement

Rise time

VR=0 V

RL=50 Ω

0 to 63%

Peak

sensitivity

wavelength

λp

Photo

condition

Element

temperature

Cutoff

wavelength

λc

sensitivity Shunt resistance

NEP

λ=λp

Rsh

(λp, 600, 1)

Type no.

λ=λp

Min.

(Ω)

250

1000

Typ.

(Ω)

400

1300

Min.

Typ.

(°C)

-10

-30

-196

(μm)

3.35

3.30

3.25

3.00

(μm)

3.65

3.55

3.45

3.1

(A/W)

1.0

(cm · Hz^1/2/W) (cm · Hz^1/2/W) (W/Hz^1/2

)

(μs)

0.70

0.45

0.30

0.10

P10090-01

3.0 × 10⁹

4.5 × 10⁹

1.5

10^-11

10^-12

10^-13

P10090-11

P10090-21

P7163

1.0 × 10¹⁰1.6 × 10¹⁰5.3

1.2

1.3

2.0 × 10¹⁰3.2 × 10¹⁰2.8

1 × 10⁵1 × 10⁶3.5 × 10¹¹*³6.0 × 10¹¹

1.5

*3: D (λp, 1200, 1)

Spectral response (D )

Spectral response

(Typ.)

10¹²

1.4

1.2

P7163

(Td=-196 °C)

10¹¹

P10090-21 (Td=-30 °C)

1.0

0.8

10¹⁰

10⁹

Td=-10 °C

Td=-30 °C

0.6

0.4

0.2

P10090-11

(Td=-10 °C)

10⁸

10⁷

P10090-01

(Td=25 °C)

Td=25 °C

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Wavelength (μm)

KIRDB0356ED

KIRDB0381EB

InAs photovoltaic detectors

P10090 series, P7163

Dark current vs. reverse voltage

Shunt resistance vs. element temperature (P10090 series)

(Typ.)

1 mA

100 μA

10 μA

1 μA

100 kΩ

Td=25 °C

10 kΩ

1 kΩ

Td=-10 °C

Td=-30 °C

100 Ω

10 Ω

1 Ω

0.01

0.1

-100 -80 -60 -40 -20

Reverse voltage (V)

Element temperature (°C)

KIRDB0382EB

KIRDB0383EA

Linearity

Sensitivity uniformity

(Typ. Ta=25 °C, λ=1.3 μm)

(Typ. λ=1.55 μm)

Td=-10 °C

1000

110

100

Td=10 °C

Td=25 °C

100

1000

10000

-600

-400

-200

200

400

600

Incident light level (μW)

Position on photosensitive area (μm)

KIRDB0385EB

KIRDB0384EB

InAs photovoltaic detectors

P10090 series, P7163

Current vs. voltage of TE-cooled type

Cooling characteristics of TE-cooled type

(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)

1.6

(Typ. Ta=25 °C, Thermal resistance of heat sink=3 °C/W)

1.4

One-stage

TE-cooled type

1.2

One-stage

TE-cooled type

1.0

0.8

-10

-20

0.6

Two-stage

TE-cooled type

0.4

-30

Two-stage

TE-cooled type

0.2

-40

-50

0.4

0.8

1.2

1.6

0.2

0.4

0.6

0.8

1.0

1.2

TE-cooled current (A)

Voltage (V)

KIRDB0181EA

KIRDB0115EB

Thermistor temperature characteristic

(Typ.)

10⁶

10⁵

10⁴

10³

-40

-30

-20

-10

Element temperature (°C)

KIRDB0116EA

InAs photovoltaic detectors

P10090 series, P7163

Measurement circuit

Chopper

600 Hz

Detector

rms

meter

Band-pass

filter

fo=600 Hz

∆f=60 Hz

Black body

KIRDC0075EA

Dimensional outline (unit: mm)

ꢀ P10090-01

ꢁ P10090-11/-21

ϕ9.1 0.3

ϕ8.1 0.1

Window

ϕ5.5 0.1

ϕ15.3 0.2

ϕ14 0.2

Window

ϕ10 0.2

Photosensitive

surface

Photosensitive

surface

ϕ0.45

lead

ϕ0.45

lead

ϕ5.1 0.2

10.2 0.2

ϕ1.0 max.

Detector (anode)

Detector (cathode)

TE-cooler (-)

TE-cooler (+)

Thermistor

Case

P10090-11 P10090-21

4.5 0.2 6.9 0.2

5.1 0.2

KIRDA0191EA

KIRDA0219EA

InAs photovoltaic detectors

P10090 series, P7163

ꢂ P7163

LN2 fill port ϕ12.5 0.5

ϕ63.5

44.5

ϕ28.5 0.5

Pump-out

pipe ϕ9.5

Output

Photosensitive

surface

10 0.5

ϕ66.8

Detector (anode)

Detector (cathode)

KIRDA0033EE

Related information

www.hamamatsu.com/sp/ssd/doc_en.html

Precautions

∙ Notice

∙ Metal, Ceramic, Plastic products

Technical information

∙ Infrared detector / technical information

Information described in this material is current as of August, 2014.

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741

China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Cat. No. KIRD1099E08 Aug. 2014 DN

P10090_15 [HAMAMATSU]

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