K12729-010K_15 [HAMAMATSU]

Two-color detector;


型号：	K12729-010K_15
厂家：	HAMAMATSU CORPORATION
描述：	Two-color detector
文件：	总5页 (文件大小：613K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Two-color detector

K12729-010K

Wide spectral response range: 0.9 to 2.55 μm

Compact ceramic package

The K12729-010K is a two-color detector in a compact ceramic package, covering a wide spectral response range. Like the

current K11908-010K, it incorporates two InGaAs PIN photodiodes with different spectral response, along the same optical

axis. It features low noise and low dark current and supports reﬂow soldering.

Features

Applications

Wide spectral response range

Compact, low noise, low dark current

Supports reflow soldering

Spectrophotometers

Radiation thermometers

Structure

Parameter

Window material

Package

Symbol

Condition

Speciﬁcation

Borosilicate glass

Ceramic

Unit

InGaAs ( =1.7 μm)

λc

InGaAs ( =2.55 μm)

λc

2.4 × 2.4

ϕ1.0

Photosensitive area

Absolute maximum ratings

Parameter

Symbol

VR max

Condition

InGaAs ( =1.7 μm), Ta=25 °C

InGaAs ( =2.55 μm), Ta=25 °C

λc

Value

Unit

λc

Reverse voltage

Operating temperature

Storage temperature

Topr

Tstg

No condensation

-20 to +70

-20 to +85

°C

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

Electrical and optical characteristics (Ta=25 °C)

Parameter

Spectral response

range

Peak sensitivity

wavelength

Symbol

Condition

InGaAs ( =1.7 μm)

λc

InGaAs ( =2.55 μm)

InGaAs ( =1.7 μm)

λc

InGaAs ( =2.55 μm)

InGaAs ( =1.7 μm), λ=λp

λc

InGaAs ( =2.55 μm), λ=λp

Min.

0.85

0.7

Typ.

0.9 to 1.7

1.7 to 2.55

1.55

Max.

3.5

Unit

μm

λc

λp

μm

2.1

0.95

1.0

λc

Photosensitivity

Dark current

A/W

λc

InGaAs ( =1.7 μm), VR=10 mV

λc

InGaAs ( =2.55 μm), VR=10 mV

μA

0.7

λc

InGaAs ( =1.7 μm), -3 dB

λc

VR=0 V, RL=50 Ω

Cutoff frequency

MHz

InGaAs ( =2.55 μm), -3 dB

λc

VR=0 V, RL=50 Ω

InGaAs ( =1.7 μm), V

=0 V, f=1 MHz

2.8

1.5

0.5

2.5

λc

Terminal capacitance

Shunt resistance

Detectivity

Rsh

InGaAs ( =2.55 μm), V

λc

InGaAs ( =1.7 μm), VR=10 mV

λc

InGaAs ( =2.55 μm), VR=10 mV

λc

InGaAs ( =1.7 μm), λ=λp

λc

InGaAs ( =2.55 μm), λ=λp

λc

MΩ

kΩ

1 × 10¹²

2 × 10¹⁰

5 × 10¹²

7 × 10¹⁰

cm∙Hz^1/2/W

www.hamamatsu.com

Two-color detector

K12729-010K

Spectral response

Spectral transmittance of window material

(Typ. Ta=25 °C)

1.2

100

1.0

0.8

0.6

0.4

InGaAs (λc=2.55 μm)

InGaAs (λc=1.7 μm)

0.2

0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6

1.0

0.9

1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6

Wavelength (μm)

Wavelength (ꢀm)

KIRDB0479EB

KIRDB0606EA

Temperature characteristics of sensitivity

Dark current vs. reverse voltage

(Typ. Ta=25 °C)

(Typ. VR=0 V, Ta=15 to 65 °C)

2.0

1 mA

100 μA

10 μA

1 μA

1.5

InGaAs (λc=1.7 μm)

1.0

InGaAs (λc=2.55 μm)

InGaAs (λc=1.7 μm)

0.1

0.5

100 nA

10 nA

-0.5

InGaAs (λc=2.55 μm)

-1.0

1 nA

-1.5

-2.0

100 pA

0.01

1.0 1.1 1.2

0.9

1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6

Reverse voltage (V)

Wavelength (μm)

KIRDB0603EA

KIRDB0495EB

Two-color detector

K12729-010K

Terminal capacitance vs. reverse voltage

Shunt resistance vs. element temperature

(Typ. Ta=25 °C, f=1 MHz)

10 nF

(Typ. V^R=10 mV)

10 GΩ

1 GΩ

InGaAs (λc=1.7 μm)

100 MΩ

10 MΩ

1 MΩ

1 nF

100 kΩ

10 kΩ

1 kΩ

100 pF

InGaAs (λc=2.55 μm)

100 Ω

10 Ω

10 pF

0.001

0.01

0.1

-20

Reverse voltage (V)

Element temperature (°C)

KIRDB0604EA

KIRDB0605EA

Dimensional outline (unit: mm)

Recommended land mark pattern (unit: mm)

ꢀ

2.5

3.3

2.5

Index mark

6.6 0.2

Photosensitive area

InGaAs (λc=1.7 ꢀm)

Window

Photosensitive area

InGaAs (λ=2.5 ꢀm)

0.5

8.0

3.3

2.5

KIRDC0121EA

2.0 0.2

3.7 0.2

2.0 0.2

Cathode

(InGaAs, λc=1.7 ꢀm)

Anode

(InGaAs, λc=1.7 ꢀm)

Cathode

(InGaAs, λc=2.55 ꢀm)

Anode

(InGaAs, λc=2.55 ꢀm)

Center position accuracy of

photosensitive area

-0.3≤X≤+0.3

2.5 0.2

(0.15)

-0.3≤Y≤+0.3

KIRDA0244EA

Two-color detector

K12729-010K

Measured example of temperature profile with our hot-air reflow oven for product testing

300

260 °C max

250

200

150

100

50 100 150 200 250 300 350 400 450 500 550

Time (s)

KIRDC0122EA

∙ After unpacking, store the device in an environment at a temperature range of 5 to 30 °C and a humidity of 60% or less, and perform

reﬂow soldering within 4 weeks.

∙ The thermal stress applied to the device during reﬂow soldering varies depending on the circuit board and the reﬂow oven that is

used.

∙ When setting the reﬂow conditions, verify that the reliability of the device is not compromised by the reﬂow soldering process.

Two-color detector

K12729-010K

Related information

www.hamamatsu.com/sp/ssd/doc_en.html

Precautions

∙ Notice

∙ Metal, ceramic, plastic packages

Technical information

∙ Infrared detector / Technical information

Information described in this material is current as of August, 2014.

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741

China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Cat. No. KIRD1129E01 Aug. 2014 DN

K12729-010K_15 [HAMAMATSU]

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