G12183 [HAMAMATSU]
InGaAs PIN photodiodes;
| 型号： | G12183 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | InGaAs PIN photodiodes |
| 文件： | 总6页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
InGaAs PIN photodiodes
G12183 series
Long wavelength type
(cutoff wavelength: 2.55 to 2.6 μm)
Features
Applications
Cutoff wavelength: 2.55 to 2.6 μm
Low cost
Optical power meters
Gas analyzers
Moisture meters
Photosensitive area: φ0.3 to φ3 mm
Low noise
NIR (near infrared) photometry
High sensitivity
Options
High reliability
High-speed response
Amplifier for InGaAs PIN photodiode
C4159-03
Heatsink for one-stage TE-cooled type
Heatsink for two-stage TE-cooled type
A3179
A3179-01
Temperature controller for TE-cooled type C1103-04
Structure / Absolute maximum ratings
Absolute maximum ratings
Dimensional
outline
Photosensitive
Thermister TE-cooler TE-cooler Reverse
power allowable allowable voltage temperature temperature
dissipation current
Operating
Storage
area
Type no.
Package Cooling
Soldering
conditions
/Window
voltage
(V)
Topr
(°C)
Tstg
(°C)
VR max
(V)
1
material
*
(mm)
φ0.3
φ0.5
φ1
φ2
φ3
(mW)
(A)
G12183-003K
G12183-005K
G12183-010K
G12183-020K
G12183-030K
G12183-103K
G12183-105K
G12183-110K
G12183-120K
G12183-130K
G12183-203K
G12183-205K
G12183-210K
G12183-220K
G12183-230K
(1)/B
(2)/B
TO-18
Non-
2
2
-
-
-
-40 to +85
*
-55 to +125*
cooled
TO-5
φ0.3
φ0.5
φ1
φ2
φ3
φ0.3
φ0.5
φ1
φ2
φ3
260 °C or
less,
within 10 s
One-stage
TO-8
(3)/B
(4)/B
1.5
1.0
1.0
1.2
1
TE-cooled
2
2
0.2
-40 to +70* -55 to +85*
Two-stage
TO-8
TE-cooled
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
*1: B=Borosilicate glass
*2: No condensation
The G12183 series may be destroyed or deteriorated by electrostatic discharge, etc. Be carefull when using the G12183 series.
1
www.hamamatsu.com
InGaAs PIN photodiodes
G12183 series
Electrical and optical characteristics (Typ., unless otherwise noted)
Measurement
Condition
Cutoff
frequency capacitance
Terminal
P
eak
Photo-
sensitivity current
Dark
Shunt
resistance
Rsh
Noize
equivalent power
NEP
Detectivity
D*
λ=λp
Spectral sensi-
response tivity
Temp.
coefficient
of ID
fc
Ct
VR=0 V
f=1 MHz
S
ID
range
λ
wave-
length
λp
VR=0 V
RL=50 Ω
Element
temperature
Type no.
λ=λp VR=0.5 V
VR=10 mV
λ=λp
VR=0.5 V
Min. Typ. Typ. Max.
Min. Typ. Typ. Max. Min. Typ. Min. Typ.
Typ.
Max.
(°C)
25
(μm) (μm) (A/W) (A/W)
(μ
A) (μ
A)
(MHz) (MHz) (pF) (pF) (kΩ) (kΩ) (cm·Hz1/2/W) (cm·Hz1/2/W) (W/Hz1/2) (W/Hz1/2
)
G12183-003K
G12183-005K
G12183-010K
G12183-020K
G12183-030K
G12183-103K
G12183-105K
G12183-110K
G12183-120K
G12183-130K
G12183-203K
G12183-205K
G12183-210K
G12183-220K
G12183-230K
0.4
1
3
4
10
30
20
5
2
50
20
6
50
100
20
10
100
50
4 × 10-13 9 × 10-13
140 300
500 1000 2.8
5 × 10-13 1.5 × 10-12
0.9 to 2.6
14 3 × 1010 9 × 1010 1 × 10-12 3 × 10-12
10 100
30 300
0.12 1.2
1
1.5 1800 3000 0.65
0.8 4000 5000 0.25 1.4
3
2 × 10-12 5 × 10-12
3 × 10-12 8 × 10-12
1 × 10-13 3 × 10-13
1.5 × 10-13 4.5 × 10-13
0.5
20
5
2
1
0.5
20
5
2
1
70
25
7
44
100 200 1000
0.3
0.9
3
3
9
30
90
120 300 100 500
440 1000 28
1500 3000 6.5
-10
-20
0.9 to 2.57
0.9 to 2.55
140 1 × 1011 3 × 1011 2.5 × 10-13 8 × 10-13
30
14
2.3
1
1.3
1.035
2
5.5 × 13-13 2 × 10-12
8.5 × 10-13 2.5 × 10-12
7 × 10-14 2 × 10-13
1 × 10-13 3 × 10-13
9
0.9 3400 5000 2.8
0.085 0.85
0.21 2.1
0.65 6.5
2.1 21
75
28
8
40
100 400 2000
110 300 200 1000
400 1000 55
280 1.5 × 1011 4.5 × 1011 2 × 10-13 5.5 × 10-13
60
28
2.3 1400 3000 13
3200 5000 5.5
4 × 10-13 1 × 10-12
6 × 10-13 2 × 10-12
6
60
0.5
1
Spectral response
Photosensitivity temperature characteristics
(Typ. VR=0 V)
(Typ.)
1.4
2
Td=25 ˚C
Td=-10 ˚C
Td=-20 ˚C
1.2
1.0
0.8
0.6
0.4
1
0
0.2
0
-1
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Wavelength (μm)
Wavelength (μm)
KIRDB0206EA
KIRDB0491EC
2
InGaAs PIN photodiodes
G12183 series
Linearity (G12183-010K)
(Typ. Ta=25 °C, λ=1.55 ꢀm, RL=2 Ω, VR=0 V)
102
100
98
96
94
92
90
88
86
84
82
80
0
2
4
6
8
10
Incident light level (mW)
KIRDB0539EA
Dark current vs. reverse voltage
Non-cooled type
TE-cooled type
(Typ. Ta=25 °C
)
(Typ.)
100 μA
10 μA
1 μA
100 μA
10 μA
1 μA
G12183-130K (Td=-10 °C)
G12183-230K (Td=-20 °C)
G12183-030K
G12183-020K
G12183-120K (Td=-10 °C)
G12183-010K
G12183-220K (Td=-20 °C)
G12183-110K (Td=-10 °C)
G12183-210K (Td=-20 °C)
G12183-005K
G12183-003K
G12183-105K (Td=-10 °C)
G12183-205K (Td=-20 °C)
100 nA
10 nA
100 nA
G12183-103K (Td=-10 °C)
G12183-203K (Td=-20 °C)
10 nA
0.01
0.01
0.1
1
10
0.1
1
10
Reverse voltage (V)
Reverse voltage (V)
KIRDB0492EA
KIRDB0531EA
3
InGaAs PIN photodiodes
G12183 series
Terminal capacitance vs. reverse voltage
Shunt resistance vs. element temperature
(Typ. Ta=25 °C, f=1 MHz)
10 nF
(Typ. VR=10 mV)
10 MΩ
G12183-003K/-103K/-203K
G12183-030K/-130K/-230K
G12183-005K/-105K/-205K
G12183-010K/-110K/-210K
1 MΩ
100 kΩ
10 kΩ
1 kΩ
1 nF
G12183-020K/-120K/-220K
G12183-010K/-110K/-210K
G12183-005K/-105K/-205K
100 pF
G12183-020K/-120K/-220K
G12183-030K/-130K/-230K
20 40
100 Ω
10 Ω
G12183-003K/-103K/-203K
10 pF
0.001
0.01
0.1
1
10
-40
-20
0
60
80
100
Revers voltage(V)
Element temperature (°C)
KIRDB0493EB
KIRDB0494EB
The operating temperature for one-stage and
two-stage TE-cooled types is up to 70 °C.
Thermistor temperature characteristics
Cooling characteristics of TE-cooler
(Typ.)
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)
40
106
105
104
20
One-stage
TE-cooled type
0
-20
Two-stage
TE-cooled type
-40
-60
103
-40
-30
-20
-10
0
10
20
30
0
0.2
0.4
0.6
0.8
1.0 1.2
1.4
1.6
Element temperature (°C)
Current (A)
KIRDB0231EA
KIRDB0116EA
4
InGaAs PIN photodiodes
G12183 series
Current vs. voltage (TE-cooler)
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)
1.6
1.4
One-stage
TE-cooled type
1.2
1.0
0.8
0.6
Two-stage
TE-cooled type
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Voltage (V)
KIRDB0115EB
Dimensional outlines (unit: mm)
G12183-003K/-005K/-010K
G12183-020K/-030K
(2)
(1)
9.2 0.2
8.1 0.1
5.4 0.2
4.7 0.1
Window
5.9 0.1
Window
3.0 0.1
Photosensitive
surface
Photosensitive
surface
0.45
Lead
0.45
Lead
5.1 0.3
2.54 0.2
1.5 max.
Case
Case
Distance from photosensitive
area center to cap center
-0.2≤X≤+0.2
Distance from photosensitive
area center to cap center
-0.2≤X≤+0.2
-0.2≤Y≤+0.2
KIRDA0220EA
-0.2≤Y≤+0.2
KIRDA0221EA
5
InGaAs PIN photodiodes
G12183 series
(3) G12183-103K/-105K/-110K/-120K/-130K
(4) G12183-203K/-205K/-210K/-220K/-230K
15.3 0.2
14 0.2
15.3 0.2
14 0.2
Window
10 0.2
Window
10 0.2
Photosensitive
surfacae
Photosensitive
surfacae
0.45
Lead
0.45
Lead
10.2 0.2
10.2 0.2
5.1 0.2
5.1 0.2
Detector (anode)
Detector (cathode)
TE-cooler (-)
Te-cooler (+)
Thermistor
Detector (anode)
Detector (cathode)
TE-cooler (-)
Te-cooler (+)
Thermistor
Distance from photosensitive
area center to cap center
-0.3≤X≤+0.3
Distance from photosensitive
area center to cap center
-0.3≤X≤+0.3
-0.3≤Y≤+0.3
-0.3≤Y≤+0.3
G12183-103K G12183-120K
/-105K/110K
/-130K
G12183-203K G12183-220K
A
4.3 0.2
4.4 0.2
/-205K/-210K
/-230K
KIRDA0228EA
A
6.6 0.2
6.7 0.2
KIRDA0229EA
Information described in this material is current as of April, 2013.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
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Cat. No. KIRD1119E02 Apr. 2013 DN
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