S3MF [GXELECTRONICS]
Surface Mount General Purpose Silicon Rectifiers;
| 型号： | S3MF |
| 厂家： | 
Gaomi Xinghe Electronics Co., Ltd. |
| 描述： | Surface Mount General Purpose Silicon Rectifiers |
| 文件： | 总2页 (文件大小：438K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S3AF THRU S3MF
Surface Mount General Purpose Silicon Rectifiers
星合 子
XINGHE ELECTRONICS
Reverse Voltage - 50 to 1000 V
Forward Current - 3 A
SMAF
FEATURES
Cathode Band
Top View
• For surface mounted applications
• Low profile package
0.110(2.80)
0.094(2.40)
0.059(1.50)
0.051(1.30)
• Glass Passivated Chip Juntion
• Easy to pick and place
0.150(3.80)
0.128(3.25)
• Lead free in comply with EU RoHS 2011/65/EU directives
0.012(0.30)
0.006(0.15)
0.055(1.40)
0.035(0.90)
0.047(1.20)
0.028(0.70)
MECHANICAL DATA
• ase: SMAF
C
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 27mg 0.00086oz
0.199(5.05)
0.179(4.40)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Symbols
VRRM
S3AF
50
S3BF
100
70
S3DF
200
140
200
S3GF
400
280
400
S3JF
600
420
600
S3KF
800
560
800
S3MF
1000
700
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Units
V
V
V
VRMS
35
Maximum DC Blocking Voltage
VDC
50
100
1000
Maximum Average Forward Rectified Current
at Ta = 65 °C
IF(AV)
3
A
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
IFSM
100
1.2
Maximum Instantaneous Forward Voltage at 3 A
VF
IR
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta =125 °C
5
250
μA
1）
Typical Junction Capacitance
Cj
pF
°C/W
°C
53
13
47
2）
Typical Thermal Resistance
RθJA
Operating and Storage Temperature Range
Tj, Tstg
-55 ~ +150
1）Measured at 1 MHz and applied reverse voltage of 4 V D.C
2）Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
1
GAOMI XINGHE ELECTRONICS CO.,LTD.
WWW.SDDZG.COM
S3AF THRU S3MF
Surface Mount General Purpose Silicon Rectifiers
星合 子
XINGHE ELECTRONICS
Reverse Voltage - 50 to 1000 V
Forward Current - 3 A
Fig.2 Typical Instaneous Reverse
Characteristics
Fig.1 Forward Current Derating Curve
100
3.0
2.4
TJ=150°C
TJ=125°C
10
TJ=100°C
1.8
1.2
1.0
TJ=75°C
TJ=50°C
Single phase half-wave 60 Hz
resistive or inductive load
0.1
0.6
0.0
TJ=25°C
0.01
25
50
75
100
125
150
175
0
200
400
600
800
Ambient Temperature (°C)
Instaneous Reverse Voltage (V)
Fig.3 Typical Forward Characteristic
Fig.4 Typical Junction Capacitance
1.0
0.5
100
10
1
TJ=25°C
0.2
0.1
0.6
0.7
0.8
0.9
1.0
1.1
0.1
1.0
10
100
Reverse Voltage (V)
Instaneous Forward Voltage (V)
2
GAOMI XINGHE ELECTRONICS CO.,LTD.
WWW.SDDZG.COM
相关型号：
S3MHE3/57T
3A, 1000V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
VISHAY
S3MHE3/9AT
3A, 1000V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
VISHAY
S3MHE3_A/H
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
VISHAY
S3MHE3_A/I
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
VISHAY
S3M_NL
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明