SS1100 [GWSEMI]

1.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS;


型号：	SS1100
厂家：	Goodwork Semiconductor Co., Ltd .
描述：	1.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
文件：	总2页 (文件大小：62K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SS120 THRU SS1100

1.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE

20 to 100 Volts

CURRENT

1.0 Ampere

FEATURES

* Ideal for surface mount applications

* Easy pick and place

.106(2.7)

.098(2.5)

* Built-in strain relief

* Low forward voltage drop

.051(1.3)

.043(1.1)

MECHANICAL DATA

.144(3.65)

.136(3.45)

* Case: Molded plastic

.007(0.17)

.005(0.13)

* Epoxy: UL 94V-0 rate flame retardant

* Metallurgically bonded construction

* Polarity: Color band denotes cathode end

* Mounting position: Any

.037(0.95)

.033(0.85)

.067(1.7)

.059(1.5)

.033(0.85)

.022(0.55)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SS120 SS130 SS140 SS150 SS160 SS180 SS1100 UNITS

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

Maximum DC Blocking Voltage

100

Maximum Average Forward Rectified Current

at TL=100 C

1.0

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 1.0A

0.85

0.55

0.70

0.5

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Typical Junction Capacitance (Note1)

Typical Thermal Resistance R JA(Note 2)

Operating Temperature Range TJ

Storage Temperature Range TSTG

NOTES:

Ta=100 C

110

C/W

-65 +150

1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance Junction to Ambient.

394

RATINGAND CHARACTERISTIC CURVES (SS120 THRU SS1100)

FIG.2-TYPICAL FORWARD

FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE

CHARACTERISTICS

1.2

1.0

0.8

0.6

3.0

1.0

0.4

0.2

100

120

140

160

180

200

LEAD TEMPERATURE ( C)

Tj=25 C

Pulse Width 300us

1% Duty Cycle

0.1

FIG.3-MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

.01

.9 1.1 1.3 1.5

FORWARD VOLTAGE,(V)

8.3ms Single Half

Sine Wave

Tj=25 C

JEDEC method

FIG.5 - TYPICAL REVERSE

CHARACTERISTICS

100

NUMBER OF CYCLES AT 60Hz

FIG.4-TYPICAL JUNCTION CAPACITANCE

350

300

250

200

Tj=100 C

1.0

150

100

Tj=25 C

.01

.05

100

20 40 60 80 100 120 140

PERCENTAGE RATED PEAK REVERSE VOLTAGE

REVERSE VOLTAGE,(V)

395