SMF102 [GWSEMI]
Rectifier Diode, 1 Element, 1A, 100V V(RRM);
| 型号： | SMF102 |
| 厂家： | 
Goodwork Semiconductor Co., Ltd . |
| 描述： | Rectifier Diode, 1 Element, 1A, 100V V(RRM) 二极管 |
| 文件： | 总2页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMF101 THRU SMF107
1.0 AMP SURFACE MOUNT FAST RECOVERY RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
1.0 Ampere
FEATURES
* Low forward voltage drop
* Low leakage current
* High reliability
SM-1
SOLDERABLE
ENDS
.205(5.2)
.190(4.8)
.024(.60)
.018(.46)
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Metallurgically bonded construction
* Polarity: Color band denotes cathode end
* Mounting position: Any
.105(2.7)
.095(2.4)
* Weight: 0.015 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SMF101 SMF102 SMF103 SMF104 SMF105 SMF106 SMF107 UNITS
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC Blocking Voltage
100
1000
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=55 C
1.0
A
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
30
1.3
5.0
A
V
Maximum DC Reverse Current
Ta=25 C
mA
at Rated DC Blocking Voltage
Ta=100 C
100
mA
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
150
250
500
nS
15
pF
C
Operating and Storage Temperature Range TJ, TSTG
-65 +175
NOTES:
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
238
RATING AND CHARACTERISTIC CURVES (SMF101 THRU SMF107)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
1.2
1.0
0.8
0.6
50
10
3.0
1.0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.4
0.2
0
0
20
40
60
80
100
120
140
160
180
200
Tj=25 C
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
0.1
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
.01
.6
.8 1.0 1.2 1.4 1.6 1.8 2.0
40
30
20
10
0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
8.3ms Single Half
Tj=25 C
Sine Wave
50W
10W
NONINDUCTIVE
NONINDUCTIVE
JEDEC method
(
)
(+)
D.U.T.
25Vdc
PULSE
GENERATOR
(NOTE 2)
(approx.)
50
1
5
10
100
(
)
(+)
NUMBER OF CYCLES AT 60Hz
1W
OSCILLISCOPE
(NOTE 1)
NON-
INDUCTIVE
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
35
30
25
20
trr
|
|
|
|
|
|
|
|
+0.5A
0
15
10
5
-0.25A
-1.0A
0
.01
.05
.1
.5
1
5
10
50
100
1cm
SET TIME BASE FOR
50 / 10ns / cm
REVERSE VOLTAGE,(V)
239
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