1N4007E [GULFSEMI]

GENERAL PURPOSE PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.0A; 通用塑料整流器电压: 50至1000V电流: 1.0A
1N4007E
型号: 1N4007E
厂家: GULF SEMICONDUCTOR    GULF SEMICONDUCTOR
描述:

GENERAL PURPOSE PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.0A
通用塑料整流器电压: 50至1000V电流: 1.0A

二极管
文件: 总2页 (文件大小:82K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N4001E THRU 1N4007E  
GENERAL PURPOSE  
PLASTIC RECTIFIER  
VOLTAGE:50 TO 1000V  
CURRENT: 1.0A  
A-405  
FEATURE  
Molded case feature for auto insertion  
High current capability  
Low leakage current  
High surge capability  
High temperature soldering guaranteed  
250°C/10sec/0.375”lead length at 5 lbs tension  
MECHANICAL DATA  
Terminal:Plated axial leads solderable per  
MIL-STD 202E, method 208C  
Case:Molded with UL-94 Class V-0 recognized Flame  
Retardant Epoxy  
Polarity:color band denotes cathode  
Mounting position:any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,  
for capacitive load, derate current by 20%)  
1N4  
1N4  
1N4  
1N4  
1N4  
1N4  
1N4  
SYMBOL  
units  
001E 002E 003E 004E 005E 006E 007E  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Vrrm  
Vrms  
Vdc  
50  
35  
50  
100  
70  
V
V
V
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum DC blocking Voltage  
100  
1000  
Maximum Average Forward Rectified  
Current 3/8”lead length at Ta =75°C  
Peak Forward Surge Current 8.3ms single  
Half sine-wave superimposed on rated load  
Maximum Instantaneous Forward Voltage at  
rated forward current  
If(av)  
Ifsm  
Vf  
1.0  
30.0  
1.1  
A
A
V
Maximum full load reverse current  
full cycle at TL =75°C  
Ir(av)  
30.0  
µA  
5.0  
50.0  
µA  
µA  
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25°C  
Ta =100°C  
Ir  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 1)  
Cj  
15.0  
pF  
°C/W  
°C  
(Note 2)  
R(ja)  
Tstg  
50.0  
Storage and Operation Junction Temperature  
-50 to +150  
Note:  
1. Measured at 1.0 MHz and applied voltage of 4.0Vdc  
2. Thermal Resistance from Junction to Ambient at 0.375”lead length, P.C. Board Mounted  
1
Rev.A6  
www.gulfsemi.com  
RATINGS AND CHARACTERISTIC CURVES 1N4001E THRU 1N4007E  
2
Rev.A6  
www.gulfsemi.com  

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