10ERB60DG [GULFSEMI]

ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE: 200 TO 600V CURRENT: 1.0A; 超快高效玻璃钝化整流电压: 200至600V电流: 1.0A
10ERB60DG
型号: 10ERB60DG
厂家: GULF SEMICONDUCTOR    GULF SEMICONDUCTOR
描述:

ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE: 200 TO 600V CURRENT: 1.0A
超快高效玻璃钝化整流电压: 200至600V电流: 1.0A

文件: 总2页 (文件大小:168K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
10ERB20DG THRU 10ERB60DG  
ULTRAFAST EFFICIENT  
GLASS PASSIVATED RECTIFIER  
VOLTAGE: 200 TO 600V  
CURRENT: 1.0A  
R-1  
FEATURE  
Molded case feature for auto insertion  
High current capability  
Low leakage current  
High surge capability  
High temperature soldering guaranteed  
250°C /10sec/0.375" lead length at 5 lbs tension  
Glass Passivated chip  
MECHANICAL DATA  
Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
Case: Molded with UL-94 Class V-0 recognized Flame  
Retardant Epoxy  
Polarity: color band denotes cathode  
Mounting position: any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,  
for capacitive load, derate current by 20%)  
SYMBOL  
units  
10ERB20DG  
10ERB40DG  
10ERB60DG  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Vrrm  
Vrms  
Vdc  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC blocking Voltage  
Maximum Average Forward Rectified  
Current 3/8" lead length at Ta =50°C  
Peak Forward Surge Current 8.3ms single  
Half sine-wave superimposed on rated load  
Maximum Instantaneous Forward Voltage at  
rated forward current  
If(av)  
Ifsm  
Vf  
1.0  
A
A
V
45  
35  
1.03  
1.13  
5.0  
100.0  
15.0  
µ
µ
A
A
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25°C  
Ta =100°C  
Ir  
Typical Junction Capacitance  
(Note 1)  
Cj  
Trr  
pF  
nS  
Maximum Reverse Recovery Time (Note 2)  
Operating Temperature (Note 3)  
Storage and Operation Junction Temperature  
35  
75  
R(ja)  
Tstg, Tj  
50.0  
°C /W  
°C  
-55 to +150  
Note:  
1. Measured at 1.0 MHz and applied voltage of 4.0Vdc  
2. Test Condition If =0.5A, Ir =1.0A, Irr =0.25A  
3. Thermal Resistance from Junction to Ambient at 0.375" lead length, P.C. Board Mounted  
Rev.A1  
www.gulfsemi.com  
RATINGS AND CHARACTERISTIC CURVES 10ERB20DG THRU 10ERB60DG  
MARKING:  
10ERB20DG—EB2G  
10ERB40DG—EB4G  
10ERB60DG—EB6G  
Rev.A1  
www.gulfsemi.com  

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