GRF2100 [GUERRILLA]
Low-current LNA 0.1â3.8 GHz;
| 型号： | GRF2100 |
| 厂家： | 
Guerrilla RF |
| 描述： | Low-current LNA 0.1â3.8 GHz |
| 文件： | 总11页 (文件大小：822K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GRF2100
Preliminary
Low-current LNA
0.1—3.8 GHz
Product Description
GRF2100 is a high-gain, low-current LNA tunable over
100 to 3800 MHz. it exhibits outstanding gain and NF
with Iddq levels as low as 8 mA.
The device is operated from a supply voltage (VDD) of 1.8
to 5.0 V with a selectable IDDQ range of 8 to 30 mA for
optimal efficiency and linearity.
Features
Consult with the GRF applications engineering team for
custom tuning/evaluation board data and device s-
parameters.
Reference: 3.3V/15mA/2500 MHz
• EVB NF: 0.80 dB
• Gain: 16.5 dB
• OP1dB: 10.0 dBm
• OIP3: 19.0
• Flexible Bias Voltage and Current
• Process: GaAs pHEMT
Applications
• ISM LNA
• 2.4 GHz Drones
• Small Cells and Cellular Repeaters
• Distributed Antenna Systems
Guerrilla RF Proprietary Information. Guerrilla RFTM and the composite logo of Guerrilla RFTM are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com
Revision Date: 05/30/19
1
GRF2100
Preliminary
Low-current LNA
0.1—3.8 GHz
Absolute Ratings:
Parameter
Symbol
Min.
0
Max.
5.5
Unit
V
Supply Voltage
VDD
RF Input Power: (Load VSWR < 2:1; VD: 5.0 volts)
Operating Temperature (Package Heat Sink)
PIN MAX
TAMB
15
dBm
°C
-40
105
170
Maximum Channel Temperature
(MTTF > 10^6 Hours)
TMAX
°C
Maximum Dissipated Power
Electrostatic Discharge:
Charged Device Model:
Human Body Model:
Storage:
PDISS MAX
150
mW
CDM
HBM
1500
250
V
V
Storage Temperature
TSTG
-65
150
1
°C
--
Moisture Sensitivity Level
MSL
Cauꢀon! ESD Sensiꢀve Device
Exceeding Absolute Maximum Raꢀng condiꢀons may cause permanent damage to the device.
Note: For manufacturing informaꢀon, see the Guerrilla-RF.com website for the following docu-
ment located on the GRF2100 landing page: Manufacturing Note—MN-001 Product Tape and
Reel, Solderability and Package Outline Specificaꢀon.
Link to manufacturing note
Guerrilla RF Proprietary Information. Guerrilla RFTM and the composite logo of Guerrilla RFTM are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com
Revision Date: 05/30/19
2
GRF2100
Preliminary
Low-current LNA
0.1—3.8 GHz
Pin Out (Top View)
Pin Assignments:
Pin
Name
VENABLE
Description
Enable Voltage Input
Note
VENABLE and series resistor set IDDQ. VENABLE < =0.2 volts disables device. On
1
-die pull-down resistor will turn the part off if this node is allowed to float.
No Connect or Ground
No internal connection to die
NC
2
3
4
5
6
LNA RF input
RF_In
An external DC blocking cap must be used
LNA RF output
VDD must be applied through a choke to this pin
RF_Out
No Connect or Ground
No Connect or Ground
Ground
No internal connection to die
No internal connection to die
NC
NC
Provides DC and RF ground for LNA, as well as thermal heat sink. Recom-
mend multiple 8 mil vias beneath the package for optimal RF and thermal
performance. Refer to evaluation board top layer graphic on schematic
page.
GND
PKG
BASE
Guerrilla RF Proprietary Information. Guerrilla RFTM and the composite logo of Guerrilla RFTM are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com
Revision Date: 05/30/19
3
GRF2100
Preliminary
Low-current LNA
0.1—3.8 GHz
Nominal Operating Parameters:
Specification
Typ.
Parameter
Symbol
Unit
Condition
Min.
Max.
Test Frequency
Gain
FTEST
S21
NF
2500
16.5
0.80
19.0
MHz
dB
VDD = 3.3 V, TA = 25°C
15.0
Evaluation Board Noise Figure
Output 3rd Order Intercept
1.0
dB
OIP3
dBm
-5.0 dBm POUT per tone at 2 MHz
Spacing (2499 and 2501 MHz)
Output 1dB Compression Point
Switching Rise Time
Switching Fall Time
OP1dB
TRISE
TFALL
IDD
8.0
10.0
800
200
15
dBm
ns
ns
Supply Current
mA
VDD = VENABLE = 3.3 V; Rbias: 6.0k Ω
Enable Current
IENABLE
0.5
mA
Disabled Mode
Leakage Current
ILEAKAGE
<1
uA
VDD: 3.3V; VENABLE: 0.0V
Thermal Data
Thermal Resistance: (Estimated)
235
ᵒC/W On standard Evaluation Board
jc
Channel Temperature @ +85 C Reference
(Package heat sink)
TCHANNEL
97
(See note)
ᵒC
VDD: 3.3V; IDDQ: 15 mA; No RF;
PDISS: 50 mW
Note: MTTF >10^6 hours for TCHANNEL < =170 degrees C.
Guerrilla RF Proprietary Information. Guerrilla RFTM and the composite logo of Guerrilla RFTM are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com
Revision Date: 05/30/19
4
GRF2100
Preliminary
Low-current LNA
0.1—3.8 GHz
GRF2100 Evaluation Board Measured Data; (3.3V/15mA)
Guerrilla RF Proprietary Information. Guerrilla RFTM and the composite logo of Guerrilla RFTM are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com
Revision Date: 05/30/19
5
GRF2100
Preliminary
Low-current LNA
0.1—3.8 GHz
GRF2100 Evaluation Board Measured Data; (3.3V/15mA)
Guerrilla RF Proprietary Information. Guerrilla RFTM and the composite logo of Guerrilla RFTM are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com
Revision Date: 05/30/19
6
GRF2100
Preliminary
Low-current LNA
0.1—3.8 GHz
GRF2100 Evaluation Board S-Pars and Stability Mu Factor: (2.4 to 2.7 GHz Match)
Note: Mu factor >= 1.0 implies unconditional stability.
Guerrilla RF Proprietary Information. Guerrilla RFTM and the composite logo of Guerrilla RFTM are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com
Revision Date: 05/30/19
7
GRF2100
Preliminary
Low-current LNA
0.1—3.8 GHz
GRF2100 Application Schematic
GRF2100 Evaluation Board Assembly Diagram
Guerrilla RF Proprietary Information. Guerrilla RFTM and the composite logo of Guerrilla RFTM are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com
Revision Date: 05/30/19
8
GRF2100
Preliminary
Low-current LNA
0.1—3.8 GHz
GRF2100 Standard Evaluation Board BOM: (2.4 to 2.7 GHz Tune; Vdd = Venable = 3.3V; Iddq: 15 mA)
Component
Type
Manufacturer
Family
Value
Package Size
Subsꢀtuꢀon
M1
Inductor
Capacitor
Inductor
Resistor
Murata
Murata
Murata
Various
Murata
Murata
Various
Murata
Murata
—
LQP
GJM
LQP
6.2nH
8.2 pF
0402
0402
0402
0402
0402
0402
0402
0402
0402
—
Ok
Ok
Ok
Ok
Ok
Ok
Ok
Ok
Ok
—
M2
M3
2.0 nH
6.0k ohms
0.1 uF
M5 (Sets Iddq)
5%
M8
Capacitor
Inductor
Resistor
GRM
LQG
M10
10 nH
R1
5%
370 ohms
3.0 nH
2.7 pF
L1
M12
Inductor
Capacitor
LQP
GJM/GRM
—
Evaluaꢀon Board
DFN6-15-23-A
(modified for inclusion
of L1 and R1)
—
Guerrilla RF Proprietary Information. Guerrilla RFTM and the composite logo of Guerrilla RFTM are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com
Revision Date: 05/30/19
9
GRF2100
Preliminary
Low-current LNA
0.1—3.8 GHz
1.5 mm DFN-6 Suggested PCB Footprint (Top View)
1.5 mm DFN-6 Package Dimensions
Guerrilla RF Proprietary Information. Guerrilla RFTM and the composite logo of Guerrilla RFTM are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com
Revision Date: 05/30/19
10
GRF2100
Preliminary
Low-current LNA
0.1—3.8 GHz
Data Sheet Release Status:
Advance
Notes
S-parameter and NF data based on EM simulations for the fully packaged device
using foundry supplied transistor s-parameters. Linearity estimates based on de-
vice size, bias condition and experience with related devices.
All data based on evaluation board measurements in the Guerrilla RF Applications
Lab.
Preliminary
Released
All data based on device qualification data. Typically, this data is nearly identical to
the data found in the preliminary version. Max and min values for key RF parame-
ters are included.
Informaꢀon in this datasheet is specific to the Guerrilla RF, Inc. (“Guerrilla RF”) product idenꢀfied.
This datasheet, including the informaꢀon contained in it, is provided by Guerrilla RF as a service to its customers and may be used for informaꢀonal purposes
only by the customer. Guerrilla RF assumes no responsibility for errors or omissions on this datasheet or the informaꢀon contained herein. Informaꢀon provided
is believed to be accurate and reliable, however, no responsibility is assumed by Guerrilla RF for its use, nor for any infringement of patents, or other rights of
third parꢀes, resulꢀng from its use. Guerrilla RF assumes no liability for any datasheet, datasheet informaꢀon, materials, products, product informaꢀon, or other
informaꢀon provided hereunder, including the sale, distribuꢀon, reproducꢀon or use of Guerrilla RF products, informaꢀon or materials.
No license, whether express, implied, by estoppel, by implicaꢀon or otherwise is granted by this datasheet for any intellectual property of Guerrilla RF, or any
third party, including without limitaꢀon, patents, patent rights, copyrights, trademarks and trade secrets. All rights are reserved by Guerrilla RF.
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reserves the right to change component circuitry, recommended applicaꢀon circuitry and specificaꢀons at any ꢀme without prior noꢀce. Guerrilla RF may further
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arising from any future changes.
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ꢀons assistance, customer product design, or damage to any equipment resulꢀng from the use of Guerrilla RF products outside of stated published specificaꢀons
or parameters.
Guerrilla RF Proprietary Information. Guerrilla RFTM and the composite logo of Guerrilla RFTM are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com
Revision Date: 05/30/19
11
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