GESBL1060CT [GTM]

SCHOTTKY BARRIER RECTIFIERS; 肖特基势垒整流器器
GESBL1060CT
型号: GESBL1060CT
厂家: GTM CORPORATION    GTM CORPORATION
描述:

SCHOTTKY BARRIER RECTIFIERS
肖特基势垒整流器器

文件: 总2页 (文件大小:328K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ISSUED DATE :2005/08/01  
REVISED DATE :2006/05/23B  
GTM  
CORPORATION  
GESBL1030CT~1060CT  
S C H O T T K Y B A R R I E R R E C T I F I E R S  
R E V E R S E V O LT A G E 3 0 V T O 6 0 V, C U R R E N T 1 0 A  
Description  
The GESBL1030CT~1060CT are designed for use in low voltage, high frequency inverters, free wheeling and  
polarity protection applications.  
Features  
ԦGuard ring for transient protection  
ԦLow power loss, high efficiency  
ԦHigh current capability, low V  
F
ԦHigh surge capacity  
Package Dimensions  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
4.80  
1.00  
0.50  
9.00  
10.4  
15.3  
6.60  
Min.  
1.25  
Max.  
1.45  
A
b
c
D
E
L4  
L5  
4.40  
0.76  
0.36  
8.60  
9.80  
14.7  
6.20  
c1  
b1  
L
e
L1  
Ø
1.17  
1.47  
13.25  
14.25  
2.54 REF.  
2.60  
3.71  
2.60  
2.89  
3.96  
2.80  
A1  
Maximum Ratings and Electrical Characteristics at Ta=25к unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%  
Ratings  
Unit  
Parameters  
Symbol  
GESBL  
GESBL  
GESBL  
GESBL  
GESBL  
GESBL  
V
1030CT 1035CT 1040CT 1045CT 1050CT 1060CT  
Max. Recurrent Peak Reverse Voltage  
Max. RMS Voltage  
Max. DC Blocking Voltage  
VRRM  
VRMS  
VDC  
30  
21  
30  
35  
24.5  
35  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
V
V
V
Max. Average Forward @TC=95к  
Rectified Current (See Fig.1)  
I(AV)  
10  
A
Peak Surge Forward Current  
8.3ms single half sine-wave superimposed  
on rated load (JEDEC METHOD)  
IFSM  
125  
A
Max. Forward Voltage @ 5A (Note 1)  
VF  
IR  
0.55  
0.7  
V
Max. DC Reverse Current  
@TJ=25к  
0.5  
50  
3.0  
mA  
At Rated DC Blocking Voltage @TJ=100к  
Typical Thermal Resistance (Note 2)  
Operating Temperature Range  
Storage Temperature Range  
RJC  
Tj  
Tstg  
к/W  
к
-55 ~ +125  
-55 ~ +150  
к
Notes: 1. 300us Pulse Width, 2% Duty Cycle.  
2. Thermal Resistance Junction to Case.  
GESBL1030CT~1060CT  
Page: 1/2  
ISSUED DATE :2005/08/01  
REVISED DATE :2006/05/23B  
GTM  
CORPORATION  
Characteristics Curve  
Important Notice:  
ó
ó
ó
ó
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.  
GTM reserves the right to make changes to its products without notice.  
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.  
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
Head Office And Factory:  
ó
ó
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.  
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785  
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China  
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165  
GESBL1030CT~1060CT  
Page: 2/2  

相关型号:

GESBL1630CT

SCHOTTKY BARRIER RECTIFIERS
GTM

GESD1060

NPN EPITAXIAL PLANAR TRANSISTOR
GTM

GESD880

NPN EPITAXIAL PLANAR TRANSISTOR
GTM

GET-30105

MTF for NEC`s Microwave Transistors
CEL

GET-30497

Qualification Test Results on Si MMIC
CEL

GET-30569

Qualification Test Results on NE272 ser es
CEL

GET-30593

Qualification Test Report on NE681XX
CEL

GET-30698

Specification Control Drawing Grade L Devices For Space Application
CEL

GET-30704

Qualification Test Results on Si MMIC
CEL

GET-30749

Specification Control Drawing Grade L GaAs For Satellite Application
CEL

GET-BC-0004

Qualification Test Report on NE292
CEL

GET-BC-0006

Qualification Test Results on Si MMIC
CEL