G8050 [GTM]
NPN EPITAXIAL TRANSISTOR; NPN外延型晶体管
| 型号： | G8050 |
| 厂家： | 
GTM CORPORATION |
| 描述： | NPN EPITAXIAL TRANSISTOR |
| 文件： | 总2页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISSUED DATE :2004/12/27
REVISED DATE :
GTM
CORPORATION
G8050
N P N E P ITAX IA L T R AN S IS T O R
Description
The G8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.
Features
*High Collector current (IC: 1.5A)
*Complementary to G8550
Package Dimensions
D
TO-92
E
S1
b1
SEAT IN G
PL AN E
Millimeter
Min. Max.
Millimeter
Min. Max.
REF.
REF.
A
4.45
1.02
0.36
0.36
0.36
4.7
-
0.51
0.76
0.51
D
E
L
e1
e
4.44
3.30
12.70
4.7
3.81
-
S1
b
b1
1.150 1.390
2.42 2.66
C
e1
b
e
C
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current
Symbol
Ratings
40
Unit
V
V
V
A
V
CBO
VCEO
25
6
V
EBO
I
C
B
1.5
Base Current
I
0.5
A
Junction Temperature
Storage Temperature Range
Total Power Dissipation
Tj
TsTG
+150
-55 ~ +150
1
ć
ć
W
PD
Electrical Characteristics(Ta = 25к,unless otherwise specified)
Symbol
Min.
40
25
6
Typ.
Max.
Unit
V
Test Conditions
BVCBO
BVCEO
BVEBO
-
-
-
-
-
-
-
-
-
-
-
-
9
-
-
-
I
I
I
V
V
C
C
=100uA
=2mA
V
V
E
=100uA
CB=35V
BE=6V
I
I
CBO
-
-
-
-
100
100
0.5
1.2
1
nA
nA
V
V
V
EBO
*VCE(sat)
*VBE(sat)
*VBE(on)
l
l
C
=800mA, I
C=800mA, I
B
=80mA
=80mA
=10mA
=5mA
=100mA
=800mA
B
-
V
V
V
V
V
V
CE=1V, I
CE=1V, I
CE=1V, I
CE=1V, I
C
C
C
C
*hFE
*hFE
*hFE
fT
1
2
3
45
120
40
100
-
-
500
-
-
MHz
pF
CE=10V, I =50mA, f=100MHz
CB=10V, IE=0, f=1MHz
C
Cob
-
* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%
Classification Of hFE
2
Rank
C
D
E
Range
120 ~ 200
160 ~ 320
250 ~ 500
G8050
Page: 1/2
ISSUED DATE :2004/12/27
REVISED DATE :
GTM
CORPORATION
Characteristics Curve
Cob
Important Notice:
ó
ó
ó
ó
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
ó
ó
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
G8050
Page: 2/2
相关型号：
G8050-256R
CMOS Sensor, 256 Horiz pixels, 1 Vert pixels, 1.26-4.40V, Rectangular, Through Hole Mount
HAMAMATSU
G8051-512S
CMOS Sensor, 512 Horiz pixels, 1 Vert pixels, 1.26-4.40V, Rectangular, Through Hole Mount
HAMAMATSU
©2020 ICPDF网 联系我们和版权申明