GS8161Z18DD-200_技术文档

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

400 MHz–150 MHz

100-Pin TQFP & 165-Bump BGA

Commercial Temp

Industrial Temp

18Mb Pipelined and Flow Through

Synchronous NBT SRAM

1.8 V, 2.5 V, or 3.3 V V

DD

1.8 V, 2.5 V, or 3.3 V I/O

Because it is a synchronous device, address, data inputs, and

read/ write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Sleep mode enable, ZZ and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

Features

• User-configurable Pipeline and Flow Through mode

• NBT (No Bus Turn Around) functionality allows zero wait

read-write-read bus utilization

• Fully pin-compatible with both pipelined and flow through

NtRAM™, NoBL™ and ZBT™ SRAMs

• IEEE 1149.1 JTAG-compatible Boundary Scan

• 1.8 V, 2.5 V, or 3.3 V +10%/–10% core power supply

• LBO pin for Linear or Interleave Burst mode

• Pin-compatible with 2Mb, 4Mb, 8Mb, 36Mb, 72Mb and

144Mb devices

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ pin for automatic power-down

• JEDEC-standard 165-bump BGA package

• RoHS-compliant 100-pin TQFP and 165-bump BGA

packages available

The GS8161Z18D(GT/D)/GS8161Z32D(D)/

GS8161Z36D(GT/D) may be configured by the user to operate

in Pipeline or Flow Through mode. Operating as a pipelined

synchronous device, in addition to the rising-edge-triggered

registers that capture input signals, the device incorporates a

rising-edge-triggered output register. For read cycles, pipelined

SRAM output data is temporarily stored by the edge triggered

output register during the access cycle and then released to the

output drivers at the next rising edge of clock.

Functional Description

The GS8161Z18D(GT/D)/GS8161Z32D(D)/

GS8161Z36D(GT/D) is an 18Mbit Synchronous Static SRAM.

GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other

pipelined read/double late write or flow through read/single

late write SRAMs, allow utilization of all available bus

bandwidth by eliminating the need to insert deselect cycles

when the device is switched from read to write cycles.

The GS8161Z18D(GT/D)/GS8161Z32D(D)/

GS8161Z36D(GT/D) is implemented with GSI's high

performance CMOS technology and is available in JEDEC-

standard 165-bump BGA package.

Parameter Synopsis

-400

-375

-333

-250

-200

-150

Unit

t

2.5

2.66

2.5

3.3

2.5

4.0

3.0

5.0

3.8

6.7

ns

KQ

Pipeline

3-1-1-1

tCycle

Curr (x18)

Curr (x32/x36)

370

430

350

410

310

365

250

290

210

240

185

200

mA

t

4.0

4.2

4.5

5.5

6.5

7.5

ns

KQ

Flow

Through

2-1-1-1

tCycle

Curr (x18)

Curr (x32/x36)

275

315

265

300

255

285

220

250

205

225

190

205

mA

Rev: 1.03b 9/2013

1/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

GS8161Z18DT Pinout (Package T)

100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81

A

NC

1

80

2

79

NC

3

78

V

NC

DQPA

DQA

V

DQA

DQA5

V

NC

V

ZZ

DQ^A

DQA

V

4

DDQ

77

76

75

74

73

72

71

70

69

68

67

66

65

64

63

62

61

60

59

58

57

56

55

54

53

52

51

DDQ

V

5

SS

NC

6

7

8

DQB

V

DQB

9

1M x 18

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

SS

Top View

DDQ

DQB

FT

SS

V

DD

NC

DD

V

SS

DQB

V

DDQ

V

SS

DQA

NC

V

DQB

DQPB

NC

V

SS

V

DDQ

NC

31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50

Rev: 1.03b 9/2013

2/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

GS8161Z36DT Pinout (Package T)

100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81

DQPB

DQB

DQPC

DQC

1

80

2

79

DQB

DQC

3

78

V

DQB

V

DQB

V

NC

V

ZZ

DQ^A

DQA

V

4

DDQ

77

76

75

74

73

72

71

70

69

68

67

66

65

64

63

62

61

60

59

58

57

56

55

54

53

52

51

DDQ

SS

V

5

SS

DQC

V

DQC

FT

6

7

8

9

512K x 36

Top View

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

SS

DDQ

SS

V

DD

NC

DD

V

DQD

SS

V

DDQ

V

SS

DQA

V

DQA

DQPA

DQD

V

SS

V

DQD

DQPD

DDQ

31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50

Rev: 1.03b 9/2013

3/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

100-Pin TQFP Pin Descriptions

Symbol

Type

In

Description

Burst Address Inputs; Preload the burst counter

Address Inputs

A0, A1

A

In

CK

In

Clock Input Signal

BA

In

Byte Write signal for data inputs DQA1–DQA9; active low

Byte Write signal for data inputs DQB1–DQB9; active low

Byte Write signal for data inputs DQC1–DQC9; active low

Byte Write signal for data inputs DQD1–DQD9; active low

Write Enable; active low

BB

In

BC

In

BD

W

In

E1

In

Chip Enable; active low

E2

In

Chip Enable—Active High. For self decoded depth expansion

Chip Enable—Active Low. For self decoded depth expansion

Output Enable; active low

E3

In

G

In

ADV

In

Advance/Load; Burst address counter control pin

Clock Input Buffer Enable; active low

No Connect

CKE

In

NC

—

I/O

In

DQA, DQPA

DQB, DQPB

DQC, DQPC

DQD, DQPD

ZZ

Byte A Data Input and Output pins

Byte B Data Input and Output pins

Byte C Data Input and Output pins

Byte D Data Input and Output pins

Power down control; active high

FT

In

Pipeline/Flow Through Mode Control; active low

Linear Burst Order; active low.

LBO

In

MCH

TMS

—

Must Connect High (165 BGA only)

Scan Test Mode Select

Rev: 1.03b 9/2013

4/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

100-Pin TQFP Pin Descriptions

Symbol

TDI

Type

Description

Scan Test Data In

Scan Test Data Out

Scan Test Clock

TDO

TCK

I

Scan Test Mode Select

Scan Test Data In

Scan Test Data Out

Scan Test Clock

TMS

TDI

I

O

I

TDO

TCK

V

In

Core power supply

DD

V

Ground

SS

V

Output driver power supply

DDQ

Rev: 1.03b 9/2013

5/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

165 Bump BGA—x18 Commom I/O—Top View (Package D)

1

2

3

4

5

6

7

8

9

10

A

11

A

B

C

D

E

F

NC

A

E1

BB

NC

E3

CKE

ADV

A

B

C

D

E

F

NC

A

E2

NC

BA

CK

W

G

A

NC

DQA

NC

A

NC

DQA

ZZ

NC

V

DDQ

SS

DD

SS

DD

DDQ

NC

DQB

MCH

NC

V

NC

G

H

J

NC

G

H

J

FT

NC

DQB

NC

V

NC

DDQ

K

L

NC

V

NC

K

L

NC

M

N

P

R

NC

M

N

P

R

NC

V

NC

TDI

NC

A1

A0

NC

V

NC

DDQ

SS

DDQ

NC

A

TDO

TCK

A

NC

LBO

NC

A

TMS

A

11 x 15 Bump BGA—13 mm x 15 mm Body—1.0 mm Bump Pitch

Rev: 1.03b 9/2013

6/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

165 Bump BGA—x32 Common I/O—Top View (Package D)

1

2

3

4

5

6

7

8

9

10

A

11

A

B

C

D

E

F

NC

A

E1

BC

BB

E3

CKE

ADV

A

NC

A

B

C

D

E

F

NC

A

E2

BD

BA

CK

W

G

A

NC

V

NC

DDQ

SS

DD

SS

DD

DDQ

DQC

FT

DQC

MCH

DQD

NC

V

DQB

NC

DQB

ZZ

G

H

J

G

H

J

NC

DQD

NC

V

DQA

NC

DQA

NC

DDQ

K

L

V

K

L

M

N

P

R

M

N

P

R

V

NC

TDI

NC

A1

A0

NC

V

SS

DDQ

SS

DDQ

NC

A

TDO

TCK

A

NC

LBO

NC

A

TMS

A

11 x 15 Bump BGA—13 mm x 15 mm Body—1.0 mm Bump Pitch

Rev: 1.03b 9/2013

7/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

165 Bump BGA—x36 Common I/O—Top View (Package D)

1

2

3

4

5

6

7

8

9

10

A

11

A

B

C

D

E

F

NC

A

E1

BC

BB

E3

CKE

ADV

A

NC

A

B

C

D

E

F

NC

A

E2

BD

BA

CK

W

G

A

NC

DQB

ZZ

DQC

FT

NC

V

NC

DDQ

SS

DD

SS

DD

DDQ

DQC

MCH

DQD

NC

V

DQB

NC

G

H

J

G

H

J

NC

DQD

NC

V

DQA

NC

DQA

NC

DDQ

K

L

V

K

L

M

N

P

R

M

N

P

R

V

NC

TDI

NC

A1

A0

NC

V

SS

DDQ

SS

DDQ

NC

A

TDO

TCK

A

LBO

NC

A

TMS

A

11 x 15 Bump BGA—13 mm x 15 mm Body—1.0 mm Bump Pitch

Rev: 1.03b 9/2013

8/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

GS8161Z18/32/36D 165-Bump BGA Pin Description

Symbol

A0, A1

An

Type

Description

Address field LSBs and Address Counter Preset Inputs

Address Inputs

I

DQ^A

DQB

DQC

DQD

I/O

Data Input and Output pins

BA, BB, BC, BD

I

Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low

Clock Input Signal; active high

Clock Enable; active low

CK

CKE

W

I

Write Enable; active low

E1

I

Chip Enable; active low

E3

I

Chip Enable; active low

E²

I

Chip Enable; active high

FT

I

Flow Through / Pipeline Mode Control

Output Enable; active low

Burst address counter advance enable; active high

Sleep mode control; active high

Linear Burst Order mode; active low

Scan Test Mode Select

G

I

ADV

ZZ

I

LBO

TMS

TDI

TDO

TCK

MCH

I

Scan Test Data In

O

I

Scan Test Data Out

Scan Test Clock

—

I

Must Connect High

V

Core power supply

DD

V

I

I/O and Core Ground

Output driver power supply

No Connect

SS

V

DDQ

NC

—

Rev: 1.03b 9/2013

9/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

GS8161Z18/32/36D NBT SRAM Functional Block Diagram

s

n s e e S A m p

s

i t r e W D r i v e r

Rev: 1.03b 9/2013

10/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Functional Details

Clocking

Deassertion of the Clock Enable (CKE) input blocks the Clock input from reaching the RAM's internal circuits. It may be used to

suspend RAM operations. Failure to observe Clock Enable set-up or hold requirements will result in erratic operation.

Pipeline Mode Read and Write Operations

All inputs (with the exception of Output Enable, Linear Burst Order and Sleep) are synchronized to rising clock edges. Single cycle

read and write operations must be initiated with the Advance/Load pin (ADV) held low, in order to load the new address. Device

activation is accomplished by asserting all three of the Chip Enable inputs (E1, E2 and E3). Deassertion of any one of the Enable

inputs will deactivate the device.

Function

Read

W

H

L

BA

X

BB

X

BC

X

BD

X

Write Byte “a”

Write Byte “b”

Write Byte “c”

Write Byte “d”

Write all Bytes

Write Abort/NOP

L

H

L

H

L

H

L

H

L

H

L

H

L

H

Read operation is initiated when the following conditions are satisfied at the rising edge of clock: CKE is asserted low, all three

chip enables (E1, E2, and E3) are active, the write enable input signals W is deasserted high, and ADV is asserted low. The address

presented to the address inputs is latched in to address register and presented to the memory core and control logic. The control

logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At

the next rising edge of clock the read data is allowed to propagate through the output register and onto the output pins.

Write operation occurs when the RAM is selected, CKE is active and the write input is sampled low at the rising edge of clock. The

Byte Write Enable inputs (BA, BB, BC & BD) determine which bytes will be written. All or none may be activated. A write cycle

with no Byte Write inputs active is a no-op cycle. The pipelined NBT SRAM provides double late write functionality, matching the

write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At the first rising

edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is required at the

third rising edge of clock.

Flow Through Mode Read and Write Operations

Operation of the RAM in Flow Through mode is very similar to operations in Pipeline mode. Activation of a read cycle and the use

of the Burst Address Counter is identical. In Flow Through mode the device may begin driving out new data immediately after new

address are clocked into the RAM, rather than holding new data until the following (second) clock edge. Therefore, in Flow

Through mode the read pipeline is one cycle shorter than in Pipeline mode.

Write operations are initiated in the same way, but differ in that the write pipeline is one cycle shorter as well, preserving the ability

to turn the bus from reads to writes without inserting any dead cycles. While the pipelined NBT RAMs implement a double late

write protocol, in Flow Through mode a single late write protocol mode is observed. Therefore, in Flow Through mode, address

and control are registered on the first rising edge of clock and data in is required at the data input pins at the second rising edge of

clock.

Rev: 1.03b 9/2013

11/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Synchronous Truth Table

Operation

Read Cycle, Begin Burst

Read Cycle, Continue Burst

NOP/Read, Begin Burst

Dummy Read, Continue Burst

Write Cycle, Begin Burst

Write Abort, Begin Burst

Write Cycle, Continue Burst

Write Abort, Continue Burst

Deselect Cycle, Power Down

Deselect Cycle, Continue

Sleep Mode

Type

R

Address

External

W

H

X

H

X

L

Bx E1 E2 E3

G

L

ZZ

L

H

L

DQ

Q

Notes

L-H

X

L

X

H

L

H

L

X

L

X

L

H

X

H

X

H

X

L

X

L

B

L

Q

1,10

2

1,2,10

3

R

External

H

X

High-Z

D

B

H

L

X

L

X

L

W

D

External

None

1

L

H

L

High-Z

D

1,3,10

B

H

L

X

H

X

H

X

B

X

High-Z 1,2,3,10

High-Z

D

None

D

None

L

High-Z

D

None

L

High-Z

1

4

D

None

H

X

High-Z

-

None

Clock Edge Ignore, Stall

Current

L-H

Notes:

1. Continue Burst cycles, whether read or write, use the same control inputs. A Deselect continue cycle can only be entered into if a Deselect

cycle is executed first.

2. Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W pin is

sampled low but no Byte Write pins are active so no write operation is performed.

3. G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during write

cycles.

4. If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the bus

will remain in High Z.

5. X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write signals

are Low

6. All inputs, except G and ZZ must meet setup and hold times of rising clock edge.

7. Wait states can be inserted by setting CKE high.

8. This device contains circuitry that ensures all outputs are in High Z during power-up.

9. A 2-bit burst counter is incorporated.

10. The address counter is incriminated for all Burst continue cycles.

Rev: 1.03b 9/2013

12/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Pipelined and Flow Through Read Write Control State Diagram

D

B

Deselect

R

D

W

New Read

New Write

R

W

B

R

W

R

Burst Read

Burst Write

B

D

Key

Notes:

Input Command Code

1. The Hold command (CKE Low) is not

shown because it prevents any state change.

ƒ

Transition

2. W, R, B, and D represent input command

codes as indicated in the Synchronous Truth Table.

Current State (n)

Next State (n+1)

n

n+1

n+2

n+3

Clock (CK)

Command

ƒ

Current State

Next State

Current State and Next State Definition for Pipelined and Flow Through Read/Write Control State Diagram

Rev: 1.03b 9/2013

13/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Pipeline Mode Data I/O State Diagram

Intermediate

R

W

B

Intermediate

B

R

Data Out

(Q Valid)

High Z

(Data In)

W

D

Intermediate

D

Intermediate

W

R

High Z

B

D

Intermediate

Key

Notes:

Input Command Code

1. The Hold command (CKE Low) is not

shown because it prevents any state change.

ƒ

Transition

2. W, R, B, and D represent input command

codes as indicated in the Truth Tables.

Current State (n)

Next State (n+2)

Intermediate State (N+1)

n

n+1

n+2

n+3

Clock (CK)

Command

ƒ

Intermediate

State

Current State

Next State

Current State and Next State Definition for Pipeline Mode Data I/O State Diagram

Rev: 1.03b 9/2013

14/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Flow Through Mode Data I/O State Diagram

R

W

B

R

Data Out

(Q Valid)

High Z

(Data In)

W

D

W

R

High Z

B

D

Key

Notes:

Input Command Code

1. The Hold command (CKE Low) is not

shown because it prevents any state change.

ƒ

Transition

2. W, R, B, and D represent input command

codes as indicated in the Truth Tables.

Current State (n)

Next State (n+1)

n

n+1

n+2

n+3

Clock (CK)

Command

ƒ

Current State

Next State

Current State and Next State Definition for: Pipeline and Flow through Read Write Control State Diagram

Rev: 1.03b 9/2013

15/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Burst Cycles

Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from

read to write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address

generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when

driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write

the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into

Load mode.

Burst Order

The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been

accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is low, a linear burst

sequence is selected. When the RAM is installed with the LBO pin tied high, Interleaved burst sequence is selected. See the tables

below for details.

Mode Pin Functions

Mode Name

Pin Name

State

Function

Linear Burst

Interleaved Burst

Flow Through

Pipeline

L

Burst Order Control

LBO

H

L

Output Register Control

Power Down Control

FT

ZZ

H or NC

L or NC

H

Active

Standby, I_DD= I_SB

Note:

There is a pull-up device on the FT pin and a pull-down device on the ZZ pin , so this input pin can be unconnected and the chip will operate in

the default states as specified in the above tables.

Burst Counter Sequences

Linear Burst Sequence

Interleaved Burst Sequence

A[1:0]

00

A[1:0]

01

A[1:0]

10

A[1:0]

11

A[1:0]

01

A[1:0]

10

A[1:0]

11

1st address

2nd address

3rd address

4th address

1st address

2nd address

3rd address

4th address

00

01

10

11

01

10

11

10

11

00

11

10

11

00

01

11

00

01

00

01

10

01

00

Note:

The burst counter wraps to initial state on the 5th clock.

Note:

The burst counter wraps to initial state on the 5th clock.

Rev: 1.03b 9/2013

16/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Sleep Mode

During normal operation, ZZ must be pulled low, either by the user or by it’s internal pull down resistor. When ZZ is pulled high,

the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to

low, the SRAM operates normally after ZZ recovery time.

Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to I 2. The duration of

SB

Sleep mode is dictated by the length of time the ZZ is in a high state. After entering Sleep mode, all inputs except ZZ become

disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.

When the ZZ pin is driven high, I 2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending

SB

operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated

until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands

may be applied while the SRAM is recovering from Sleep mode.

Sleep Mode Timing Diagram

tKH

tKC

tKL

CK

ZZ

tZZR

tZZS

tZZH

Designing for Compatibility

The GSI NBT SRAMs offer users a configurable selection between Flow Through mode and Pipelinemode via the FT signal found

on Pin 14. Not all vendors offer this option, however most mark Pin 14 as V or V

on pipelined parts and V on flow

DD

DDQ

SS

through parts. GSI NBT SRAMs are fully compatible with these sockets.

Rev: 1.03b 9/2013

17/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Absolute Maximum Ratings

(All voltages reference to V

)

SS

Symbol

V_DD

V_DDQ

V_I/O

Description

Value

Unit

V

Voltage on V_DDPins

Voltage in V_DDQPins

–0.5 to 4.6

–0.5 to V_DD

V

–0.5 to V_DD+0.5 ( 4.6 V max.)

Voltage on I/O Pins

Voltage on Other Input Pins

Input Current on Any Pin

Output Current on Any I/O Pin

Package Power Dissipation

Storage Temperature

V

V_IN

V

I_IN

+/–20

mA

W

I_OUT

P_D

1.5

^oC

T_STG

–55 to 125

T_BIAS

Temperature Under Bias

Note:

Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended

Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of

this component.

Power Supply Voltage Ranges

Parameter

Symbol

V_DD3

Min.

3.0

Typ.

3.3

Max.

3.6

Unit

V

3.3 V Supply Voltage

V_DD2

2.5 V Supply Voltage

2.3

2.5

2.7

V

3.3 V V_DDQI/O Supply Voltage

2.5 V V_DDQI/O Supply Voltage

V_DDQ3

V_DDQ2

3.0

3.3

3.6

V

2.3

2.5

2.7

V

Range Logic Levels

DD3

Parameter

Symbol

V_IH

Min.

2.0

Typ.

—

Max.

Unit

V

V_DD+ 0.3

Input High Voltage

Input Low Voltage

V_IL

–0.3

—

0.8

V

Notes:

1.

V

(max) must be met for any instantaneous value of V .

DD

IH

2.

V

needs to power-up before or at the same time as V

to make sure V (max) is not exceeded.

IH

DD

DDQ

Rev: 1.03b 9/2013

18/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

V

Range Logic Levels

DD2

Parameter

Symbol

V_IH

Min.

Typ.

—

Max.

Unit

V

0.6*V_DD

V_DD+ 0.3

0.3*V_DD

Input High Voltage

Input Low Voltage

V_IL

–0.3

—

V

Notes:

1.

V

(max) must be met for any instantaneous value of V .

DD

IH

2.

V

needs to power-up before or at the same time as V

to make sure V (max) is not exceeded.

IH

DD

DDQ

Recommended Operating Temperatures

Parameter

Symbol

Min.

0

Typ.

25

Max.

70

Unit

C

T_A

Ambient Temperature (Commercial Range Versions)

Ambient Temperature (Industrial Range Versions)*

–40

25

85

C

Note:

* The part numbers of Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance specifications

quoted are evaluated for worst case in the temperature range marked on the device.

Thermal Impedance

Test PCB

Substrate

JA (C°/W)

Airflow = 0 m/s

 JA (C°/W)

Airflow = 1 m/s

 JA (C°/W)

Airflow = 2 m/s

Package

JB (C°/W)

 JC (C°/W)

100 TQFP

165 BGA

4-layer

35.7

31.0

29.4

27.0

8.4

27.47

24.14

23.10

15.27

5.44

Notes:

1. Thermal Impedance data is based on a number of samples from multiple lots and should be viewed as a typical number.

2. Please refer to JEDEC standard JESD51-6.

3. The characteristics of the test fixture PCB influence reported thermal characteristics of the device. Be advised that a good thermal path to

the PCB can result in cooling or heating of the RAM depending on PCB temperature.

Undershoot Measurement and Timing

Overshoot Measurement and Timing

V

IH

20% tKC

V

+ 2.0 V

DD

V

SS

50%

V

DD

V

– 2.0 V

SS

20% tKC

V

IL

Note:

Input Under/overshoot voltage must be –2 V > Vi < V +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.

DDn

Rev: 1.03b 9/2013

19/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Capacitance

o

(T = 25 C, f = 1 MHZ, V = 2.5 V)

A

DD

Parameter

Symbol

C_IN

Test conditions

V_IN= 0 V

Typ.

Max.

Unit

pF

Input Capacitance

4

6

5

7

C_I/O

V_OUT= 0 V

Input/Output Capacitance

pF

Note:

These parameters are sample tested.

AC Test Conditions

Parameter

Conditions

V_DD– 0.2 V

Input high level

Input low level

0.2 V

1 V/ns

V_DD/2

Input slew rate

Input reference level

V_DDQ/2

Output reference level

Output load

Fig. 1

Notes:

1. Include scope and jig capacitance.

2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted.

3. Device is deselected as defined by the Truth Table.

Output Load 1

DQ

*

50

30pF

V

DDQ/2

* Distributed Test Jig Capacitance

Rev: 1.03b 9/2013

20/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

DC Electrical Characteristics

Parameter

Symbol

Test Conditions

Min

Max

Input Leakage Current

(except mode pins)

I_IL

V_IN= 0 to V_DD

–1 uA

1 uA

V_DD V_IN V_IH

0 V V_INV_IH

–1 uA

1 uA

100 uA

I_IN1

ZZ Input Current

FT Input Current

V_DD V_IN V_IL

0 V V_INV_IL

–100 uA

–1 uA

1 uA

I_IN2

I_OL

Output Disable, V_OUT= 0 to V_DD

I_OH= –8 mA, V_DDQ= 2.375 V

I_OH= –8 mA, V_DDQ= 3.135 V

I_OL= 8 mA

Output Leakage Current

Output High Voltage

Output Low Voltage

–1 uA

1.7 V

2.4 V

—

1 uA

—

V_OH2

V_OH3

V_OL

—

0.4 V

Rev: 1.03b 9/2013

21/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Rev: 1.03b 9/2013

22/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)



AC Electrical Characteristics

-400

-375

-333

-250

-200

-150

Parameter

Symbol

Min Max Min Max Min Max Min Max Min Max Min Max

Clock Cycle Time

tKC

tKQ

2.5

—

2.5

—

4.0

—

2.66

—

2.5

—

4.2

—

3.3

—

2.5

—

4.5

—

4.0

—

2.5

—

5.5

—

5.0

—

3.0

—

6.5

—

6.7

—

ns

Clock to Output Valid

3.8 ns

Clock to Output Invalid

Pipeline

tKQX

1.5

0.9

0.1

4.0

—

1.5

0.9

0.1

4.2

—

1.5

1.0

0.1

4.5

—

1.5

1.2

0.2

5.5

—

1.5

1.4

0.4

6.5

—

1.5

0.5

7.5

—

ns

1

Clock to Output in Low-Z

tLZ

Setup time

Hold time

tS

tH

Clock Cycle Time

Clock to Output Valid

tKC

tKQ

tKQX

7.5 ns

Clock to Output Invalid

2.0

1.2

0.2

0.9

1.1

2.0

1.2

0.2

0.9

1.1

2.0

1.3

0.3

1.0

1.2

2.0

1.5

0.5

1.3

1.5

2.0

1.5

0.5

1.3

1.5

2.0

1.5

0.5

1.5

1.7

—

ns

Flow

Through

1

Clock to Output in Low-Z

tLZ

Setup time

Hold time

tS

tH

Clock HIGH Time

Clock LOW Time

tKH

tKL

Clock to Output in

High-Z

1

1.5 2.5 1.5 2.5 1.5 2.5 1.5 2.5 1.5 3.0 1.5 3.8 ns

tHZ

G to Output Valid

G to output in Low-Z

G to output in High-Z

ZZ setup time

tOE

—

0

2.5

—

2.5

—

0

2.5

—

2.5

—

0

2.5

—

2.5

—

0

2.5

—

2.5

—

0

3.0

—

3.0

—

0

3.8 ns

ns

3.8 ns

1

—

tOLZ

1

—

5

—

5

—

5

—

5

—

5

—

5

tOHZ

2

—

ns

tZZS

2

ZZ hold time

1

tZZH

ZZ recovery

tZZR

20

Notes:

1. These parameters are sampled and are not 100% tested.

2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold

times as specified above.

Rev: 1.03b 9/2013

23/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Pipeline Mode Timing (NBT)

Write A

Read B

Suspend

tKH

Read C

tKC

Write D

Write No-op Read E

Deselect

tKL

CK

A

tH

tS

A

B

C

D

E

tS

CKE

E*

ADV

W

tH

tS

Bn

tH

tLZ

tHZ

tS

tKQ

tKQX

D(A)

Q(B)

Q(C)

D(D)

Q(E)

DQ

Rev: 1.03b 9/2013

24/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Flow Through Mode Timing (NBT)

Write A

Read B

tKH

Suspend

tKC

Read C

Write D1

Suspend1

Write

Read E

Deselect

tKL

CK

CKE

E

tH

tS

tH

ADV

W

tH

tS

tH

Bn

tH

tS

A

B

C

D

E

A0–An

DQ

tH

tHZ

tKQX

tHZ

tS

tKQ

tLZ

tKQX

D(A)

Q(B)

Q(C)

D(D)

Q(E)

Rev: 1.03b 9/2013

25/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

JTAG Port Operation

Overview

The JTAG Port on this RAM operates in a manner that is compliant with IEEE Standard 1149.1-1990, a serial boundary scan

interface standard (commonly referred to as JTAG). The JTAG Port input interface levels scale with V . The JTAG output

DD

drivers are powered by V

.

DDQ

Disabling the JTAG Port

It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless

clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG

Port unused, TCK, TDI, and TMS may be left floating or tied to either V or V . TDO should be left unconnected.

DD

SS

JTAG Pin Descriptions

Pin Name

I/O

Description

Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate

from the falling edge of TCK.

TCK

Test Clock

In

The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP

TMS

TDI

Test Mode Select

Test Data In

In controller state machine. An undriven TMS input will produce the same result as a logic one input

level.

The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers

placed between TDI and TDO. The register placed between TDI and TDO is determined by the

In state of the TAP Controller state machine and the instruction that is currently loaded in the TAP

Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce

the same result as a logic one input level.

Output that is active depending on the state of the TAP state machine. Output changes in

Out response to the falling edge of TCK. This is the output side of the serial registers placed between

TDI and TDO.

TDO

Test Data Out

Note:

This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is

held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up.

JTAG Port Registers

Overview

The various JTAG registers, refered to as Test Access Port orTAP Registers, are selected (one at a time) via the sequences of 1s

and 0s applied to TMS as TCK is strobed. Each of the TAP Registers is a serial shift register that captures serial input data on the

rising edge of TCK and pushes serial data out on the next falling edge of TCK. When a register is selected, it is placed between the

TDI and TDO pins.

Instruction Register

The Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle, or

the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the

TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the

controller is placed in Test-Logic-Reset state.

Bypass Register

The Bypass Register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through

the RAM’s JTAG Port to another device in the scan chain with as little delay as possible.

Rev: 1.03b 9/2013

26/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Boundary Scan Register

The Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM’s input or I/O pins.

The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port’s TDO pin. The

Boundary Scan Register also includes a number of place holder flip flops (always set to a logic 1). The relationship between the

device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan

Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in

Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z,

SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register.

JTAG TAP Block Diagram

·

Boundary Scan Register

·

0

Bypass Register

2

1 0

Instruction Register

TDI

TDO

ID Code Register

31 30 29

2 1

0

·

· · ·

Control Signals

Test Access Port (TAP) Controller

TMS

TCK

* For the value of M, see the BSDL file, which is available at by contacting us at apps@gsitechnology.com.

Identification (ID) Register

The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in

Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM.

It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the

controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins.

Rev: 1.03b 9/2013

27/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

ID Register Contents

GSI Technology

JEDEC Vendor

ID Code

Not Used

Bit # 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1

0 1 1 0 1 1 0 0 1

0

1

X

0

Tap Controller Instruction Set

Overview

There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific

(Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be

implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load

address, data or control signals into the RAM or to preload the I/O buffers.

When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01.

When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired

instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the

TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this

device is listed in the following table.

Rev: 1.03b 9/2013

28/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

JTAG Tap Controller State Diagram

Test Logic Reset

1

0

1

Run Test Idle

Select DR

Select IR

0

1

Capture DR

Capture IR

0

Shift DR

Shift IR

0

1

Exit1 DR

Exit1 IR

0

Pause DR

Pause IR

0

1

Exit2 DR

Exit2 IR

1

Update DR

Update IR

1

0

1

0

Instruction Descriptions

BYPASS

When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This

occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facili-

tate testing of other devices in the scan path.

SAMPLE/PRELOAD

SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is

loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and

I/O buffers into the Boundary Scan Register. Boundary Scan Register locations are not associated with an input or I/O pin, and

are loaded with the default state identified in the Boundary Scan Chain table at the end of this section of the datasheet. Because

the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents

while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will

not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the

TAPs input data capture set-up plus hold time (tTS plus tTH). The RAMs clock inputs need not be paused for any other TAP

operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then

places the boundary scan register between the TDI and TDO pins.

EXTEST

EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with

all logic 0s. The EXTEST command does not block or override the RAM’s input pins; therefore, the RAM’s internal state is

still determined by its input pins.

Rev: 1.03b 9/2013

29/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)



Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command.

Then the EXTEST command is used to output the Boundary Scan Register’s contents, in parallel, on the RAM’s data output

drivers on the falling edge of TCK when the controller is in the Update-IR state.



Alternately, the Boundary Scan Register may be loaded in parallel using the EXTEST command. When the EXTEST instruc-

tion is selected, the sate of all the RAM’s input and I/O pins, as well as the default values at Scan Register locations not asso-

ciated with a pin, are transferred in parallel into the Boundary Scan Register on the rising edge of TCK in the Capture-DR

state, the RAM’s output pins drive out the value of the Boundary Scan Register location with which each output pin is associ-

ated.

IDCODE

The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in Capture-DR mode and

places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction

loaded in at power up and any time the controller is placed in the Test-Logic-Reset state.

SAMPLE-Z

If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (high-

Z) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR

state.

RFU

These instructions are Reserved for Future Use. In this device they replicate the BYPASS instruction.

JTAG TAP Instruction Set Summary

Instruction

EXTEST

Code

000

Description

Notes

1

Places the Boundary Scan Register between TDI and TDO.

Preloads ID Register and places it between TDI and TDO.

IDCODE

001

1, 2

Captures I/O ring contents. Places the Boundary Scan Register between TDI and

SAMPLE-Z

RFU

010

011

TDO.

1

Forces all RAM output drivers to High-Z.

Do not use this instruction; Reserved for Future Use.

Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.

SAMPLE/

PRELOAD

Captures I/O ring contents. Places the Boundary Scan Register between TDI and

TDO.

100

101

110

111

1

GSI

RFU

GSI private instruction.

Do not use this instruction; Reserved for Future Use.

Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.

BYPASS

Places Bypass Register between TDI and TDO.

Notes:

1. Instruction codes expressed in binary, MSB on left, LSB on right.

2. Default instruction automatically loaded at power-up and in test-logic-reset state.

Rev: 1.03b 9/2013

30/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

JTAG Port Recommended Operating Conditions and DC Characteristics (2.5/3.3 V Version)

Parameter

Symbol

Min.

Max.

Unit Notes

V

0.6 * V

V

+0.3

DD2

2.5 V Test Port Input High Voltage

2.5 V Test Port Input Low Voltage

3.3 V Test Port Input High Voltage

3.3 V Test Port Input Low Voltage

TMS, TCK and TDI Input Leakage Current

TDO Output Leakage Current

V

1

IHJ2

DD2

V

–0.3

0.3 * V

DD2

ILJ2

V

+0.3

DD3

2.0

–0.3

–300

–1

V

1

IHJ3

V

0.8

V

1

ILJ3

I

1

100

1

uA

V

2

INHJ

I

3

INLJ

I

–1

4

OLJ

V

Test Port Output High Voltage

1.7

—

0.4

—

5, 6

5, 7

5, 8

5, 9

OHJ

V

Test Port Output Low Voltage

—

V

OLJ

V

– 100 mV

DDQ

Test Port Output CMOS High

V

OHJC

V

Test Port Output CMOS Low

—

100 mV

V

OLJC

Notes:

1. Input Under/overshoot voltage must be –2 V < Vi < V

+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tTKC.

DDn

2.

V

 V V

ILJ

IN

DDn

3. 0 V V V

IN

ILJn

4. Output Disable, V

= 0 to V

DDn

OUT

5. The TDO output driver is served by the V

supply.

DDQ

6.

7.

8.

9.

I

= –4 mA

OHJ

= + 4 mA

OLJ

= –100 uA

= +100 uA

OHJC

OLJC

JTAG Port AC Test Conditions

Parameter

Conditions

JTAG Port AC Test Load

DQ

V

– 0.2 V

Input high level

Input low level

DD

0.2 V

1 V/ns

*

50

30pF

Input slew rate

V

/2

DDQ

V

/2

Input reference level

DDQ

* Distributed Test Jig Capacitance

/2

Output reference level

DDQ

Notes:

1. Include scope and jig capacitance.

2. Test conditions as shown unless otherwise noted.

Rev: 1.03b 9/2013

31/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

JTAG Port Timing Diagram

tTKC

tTKH

tTKL

TCK

tTH

tTS

TDI

TMS

TDO

tTKQ

tTH

tTS

Parallel SRAM input

JTAG Port AC Electrical Characteristics

Parameter

Symbol

tTKC

tTKQ

tTKH

tTKL

tTS

Min

Max

—

Unit

TCK Cycle Time

50

—

ns

TCK Low to TDO Valid

TCK High Pulse Width

TCK Low Pulse Width

TDI & TMS Set Up Time

TDI & TMS Hold Time

20

—

20

10

—

tTH

—

Boundary Scan (BSDL Files)

For information regarding the Boundary Scan Chain, or to obtain BSDL files for this part, please contact our Applications

Engineering Department at: apps@gsitechnology.com.

Rev: 1.03b 9/2013

32/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

TQFP Package Drawing (Package GT)



L

c

L1

Symbol

Description

Standoff

Min. Nom. Max

A1

A2

b

0.05

1.35

0.20

0.09

0.10

1.40

0.30

—

0.15

1.45

0.40

0.20

22.1

20.1

16.1

14.1

—

Body Thickness

Lead Width

c

Lead Thickness

D

Terminal Dimension 21.9

Package Body 19.9

Terminal Dimension 15.9

22.0

20.0

16.0

14.0

0.65

0.60

1.00

e

D1

E

b

E1

e

Package Body

Lead Pitch

13.9

—

L

Foot Length

Lead Length

Coplanarity

Lead Angle

0.45

—

0.75

—

L1

Y

A1

A2

E1

E

0.10

7



0

—

Notes:

1. All dimensions are in millimeters (mm).

2. Package width and length do not include mold protrusion.

Rev: 1.03b 9/2013

33/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Package Dimensions—165-Bump FPBGA (Package D)

A1 CORNER

TOP VIEW

BOTTOM VIEW

A1 CORNER

M

Ø0.10

C

Ø0.25 C A B

Ø0.40~0.60 (165x)

1

2 3 4 5 6 7 8 9 10 11

11 10 9 8

7 6 5 4 3 2 1

A

B

C

D

E

F

A

B

C

D

E

F

G

H

J

G

H

J

K

L

K

L

M

N

P

R

M

N

P

R

A

1.0

10.0

1.0

13±0.05

B

0.20(4x)

SEATING PLANE

C

Rev: 1.03b 9/2013

34/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Ordering Information—GSI NBT Synchronous SRAM

3

Speed

4

1

2

Org

Voltage

Package

T

Part Number

Type

J

(MHz/ns)

400/4.0

375/4.2

333/4.5

250/5.5

200/6.5

150/7.5

400/4.0

375/4.2

333/4.5

250/5.5

200/6.5

150/7.5

400/4.0

375/4.2

333/4.5

250/5.5

200/6.5

150/7.5

400/4.0

375/4.2

333/4.5

250/5.5

200/6.5

1M x 18

GS8161Z18DGT-400

GS8161Z18DGT-375

GS8161Z18DGT-333

GS8161Z18DGT-250

GS8161Z18DGT-200

GS8161Z18DGT-150

GS8161Z36DGT-400

GS8161Z36DGT-375

GS8161Z36DGT-333

GS8161Z36DGT-250

GS8161Z36DGT-200

GS8161Z36DGT-150

GS8161Z18DGT-400I

GS8161Z18DGT-375I

GS8161Z18DGT-333I

GS8161Z18DGT-250I

GS8161Z18DGT-200I

GS8161Z18DGT-150I

GS8161Z36DGT-400I

GS8161Z36DGT-375I

GS8161Z36DGT-333I

GS8161Z36DGT-250I

GS8161Z36DGT-200I

NBT

2.5 V/3.3 V

RoHS-compliant TQFP

C

I

1M x 18

512K x 36

1M x 18

I

1M x 18

I

1M x 18

I

1M x 18

I

1M x 18

I

512K x 36

I

Notes:

1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number.

Example: GS8161Z36DGD-200IT.

2. All GSI parts are user-configurable for pipeline or flow through operation unless otherwise stated.

3. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each

device is Pipeline/Flow through mode-selectable by the user .

4. C = Commercial Temperature Range. I = Industrial Temperature Range.

5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are

covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings

Rev: 1.03b 9/2013

35/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Ordering Information—GSI NBT Synchronous SRAM

3

Speed

4

1

2

Org

Voltage

Package

T

Part Number

Type

J

(MHz/ns)

150/7.5

400/4.0

375/4.2

333/4.5

250/5.5

200/6.5

150/7.5

400/4.0

375/4.2

333/4.5

250/5.5

200/6.5

150/7.5

400/4.0

375/4.2

333/4.5

250/5.5

200/6.5

150/7.5

400/4.0

375/4.2

333/4.5

250/5.5

512K x 36

1M x 18

GS8161Z36DGT-150I

GS8161Z18DD-400

GS8161Z18DD-375

GS8161Z18DD-333

GS8161Z18DD-250

GS8161Z18DD-200

GS8161Z18DD-150

GS8161Z32DD-400

GS8161Z32DD-375

GS8161Z32DD-333

GS8161Z32DD-250

GS8161Z32DD-200

GS8161Z32DD-150

GS8161Z36DD-400

GS8161Z36DD-375

GS8161Z36DD-333

GS8161Z36DD-250

GS8161Z36DD-200

GS8161Z36DD-150

GS8161Z18DD-400I

GS8161Z18DD-375I

GS8161Z18DD-333I

GS8161Z18DD-250I

NBT

2.5 V/3.3 V

RoHS-compliant TQFP

165 BGA

I

C

I

1M x 18

512K x 32

512K x 36

1M x 18

I

1M x 18

I

1M x 18

I

Notes:

1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number.

Example: GS8161Z36DGD-200IT.

2. All GSI parts are user-configurable for pipeline or flow through operation unless otherwise stated.

3. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each

device is Pipeline/Flow through mode-selectable by the user .

4. C = Commercial Temperature Range. I = Industrial Temperature Range.

5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are

covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings

Rev: 1.03b 9/2013

36/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Ordering Information—GSI NBT Synchronous SRAM

3

Speed

4

1

2

Org

Voltage

Package

T

Part Number

Type

J

(MHz/ns)

200/6.5

150/7.5

400/4.0

375/4.2

333/4.5

250/5.5

200/6.5

150/7.5

400/4.0

375/4.2

333/4.5

250/5.5

200/6.5

150/7.5

400/4.0

375/4.2

333/4.5

250/5.5

200/6.5

150/7.5

400/4.0

375/4.2

333/4.5

1M x 18

GS8161Z18DD-200I

GS8161Z18DD-150I

GS8161Z32DD-400I

GS8161Z32DD-375I

GS8161Z32DD-333I

GS8161Z32DD-250I

GS8161Z32DD-200I

GS8161Z32DD-150I

GS8161Z36DD-400I

GS8161Z36DD-375I

GS8161Z36DD-333I

GS8161Z36DD-250I

GS8161Z36DD-200I

GS8161Z36DD-150I

GS8161Z18DGD-400

GS8161Z18DGD-375

GS8161Z18DGD-333

GS8161Z18DGD-250

GS8161Z18DGD-200

GS8161Z18DGD-150

GS8161Z32DGD-400

GS8161Z32DGD-375

GS8161Z32DGD-333

NBT

2.5 V/3.3 V

165 BGA

I

512K x 32

512K x 36

1M x 18

165 BGA

RoHS-compliant 165 BGA

C

1M x 18

512K x 32

Notes:

1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number.

Example: GS8161Z36DGD-200IT.

2. All GSI parts are user-configurable for pipeline or flow through operation unless otherwise stated.

3. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each

device is Pipeline/Flow through mode-selectable by the user .

4. C = Commercial Temperature Range. I = Industrial Temperature Range.

5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are

covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings

Rev: 1.03b 9/2013

37/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Ordering Information—GSI NBT Synchronous SRAM

3

Speed

4

1

2

Org

Voltage

Package

T

Part Number

Type

J

(MHz/ns)

250/5.5

200/6.5

150/7.5

400/4.0

375/4.2

333/4.5

250/5.5

200/6.5

150/7.5

400/4.0

375/4.2

333/4.5

250/5.5

200/6.5

150/7.5

400/4.0

375/4.2

333/4.5

250/5.5

200/6.5

150/7.5

400/4.0

375/4.2

512K x 32

512K x 36

1M x 18

GS8161Z32DGD-250

GS8161Z32DGD-200

GS8161Z32DGD-150

GS8161Z36DGD-400

GS8161Z36DGD-375

GS8161Z36DGD-333

GS8161Z36DGD-250

GS8161Z36DGD-200

GS8161Z36DGD-150

GS8161Z18DGD-400I

GS8161Z18DGD-375I

GS8161Z18DGD-333I

GS8161Z18DGD-250I

GS8161Z18DGD-200I

GS8161Z18DGD-150I

GS8161Z32DGD-400I

GS8161Z32DGD-375I

GS8161Z32DGD-333I

GS8161Z32DGD-250I

GS8161Z32DGD-200I

GS8161Z32DGD-150I

GS8161Z36DGD-400I

GS8161Z36DGD-375I

NBT

2.5 V/3.3 V

RoHS-compliant 165 BGA

C

I

1M x 18

I

1M x 18

I

1M x 18

I

1M x 18

I

1M x 18

I

512K x 32

512K x 36

I

Notes:

1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number.

Example: GS8161Z36DGD-200IT.

2. All GSI parts are user-configurable for pipeline or flow through operation unless otherwise stated.

3. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each

device is Pipeline/Flow through mode-selectable by the user .

4. C = Commercial Temperature Range. I = Industrial Temperature Range.

5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are

covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings

Rev: 1.03b 9/2013

38/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

Ordering Information—GSI NBT Synchronous SRAM

3

Speed

4

1

2

Org

Voltage

Package

T

Part Number

Type

J

(MHz/ns)

333/4.5

250/5.5

200/6.5

150/7.5

512K x 36

GS8161Z36DGD-333I

GS8161Z36DGD-250I

GS8161Z36DGD-200I

GS8161Z36DGD-150I

NBT

2.5 V/3.3 V

RoHS-compliant 165 BGA

I

Notes:

1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number.

Example: GS8161Z36DGD-200IT.

2. All GSI parts are user-configurable for pipeline or flow through operation unless otherwise stated.

3. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each

device is Pipeline/Flow through mode-selectable by the user .

4. C = Commercial Temperature Range. I = Industrial Temperature Range.

5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are

covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings

Rev: 1.03b 9/2013

39/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8161Z18D(GT/D)/GS8161Z32D(D)/GS8161Z36D(GT/D)

18Mb Sync SRAM Datasheet Revision History

Types of Changes

Format or Content

File Name

Description of changes

• Creation of new datasheet

8161ZxxD_r1

• Addition of IDD numbers

8161ZxxD_r1_01

Content

• Updated Absolute Maximum Ratings

• Updated Ordering Information

8161ZxxD_r1_02

8161ZxxD_r1_03

• Updated to reflect MP status

• (Rev1.03a: Corrected 165 thermal numbers)

• (Rev1.03b: Corrected TQFP thermal numbers)

Content

Rev: 1.03b 9/2013

40/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.


型号：	GS8161Z18DD-200
厂家：	GSI TECHNOLOGY
描述：	ZBT SRAM, 1MX18, 6.5ns, CMOS, PBGA165, FPBGA-165 静态存储器内存集成电路
文件：	总40页 (文件大小：546K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GS8161Z18DD-200 [GSI]

相关型号：

GS8161Z18DD-200V

GS8161Z18DD-200VT

GS8161Z18DD-333IV

GS8161Z18DD-333IVT

GS8161Z18DD-375T

GS8161Z18DD-400T

GS8161Z18DGD-150I

GS8161Z18DGD-150IV

GS8161Z18DGD-200I

GS8161Z18DGD-200IT

GS8161Z18DGD-200IVT

GS8161Z18DGD-250I