GS71108AGU-12I [GSI]

Standard SRAM, 128KX8, 12ns, CMOS, PBGA48, 6 X 8 MM, ROHS COMPLIANT, 0.75 MM PITCH, FBGA-48;
GS71108AGU-12I
型号: GS71108AGU-12I
厂家: GSI TECHNOLOGY    GSI TECHNOLOGY
描述:

Standard SRAM, 128KX8, 12ns, CMOS, PBGA48, 6 X 8 MM, ROHS COMPLIANT, 0.75 MM PITCH, FBGA-48

静态存储器 内存集成电路
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GS71108AU  
7, 8, 10, 12 ns  
FP-BGA  
Commercial Temp  
Industrial Temp  
128K x 8  
1Mb Asynchronous SRAM  
3.3 V V  
DD  
Center V and V  
DD  
SS  
Features  
Fine Pitch BGA 128K x 8-Bump Configuration  
• Fast access time: 7, 8, 10, 12 ns  
• CMOS low power operation: 140/120/95/80 mA at minimum  
cycle time  
• Single 3.3 V power supply  
• All inputs and outputs are TTL-compatible  
• Fully static operation  
1
2
3
4
5
6
A
B
C
D
NC  
OE  
A2  
A1  
A0  
NC  
A6  
A5  
A4  
A3  
A7  
NC  
DQ1 NC  
DQ2 NC  
CE DQ8  
NC DQ7  
• Industrial Temperature Option: 40° to 85°C  
• Package line up  
VSS  
VDD  
VDD  
VSS  
NC  
NC  
NC  
NC  
U: 6 mm x 8 mm Fine Pitch Ball Grid Array package  
GU: RoHS-compliant 6 mm x 8 mm Fine Pitch Ball Grid  
Array package  
E
F
NC  
A14  
A15  
A16  
NC  
DQ3 NC  
DQ4 NC  
A11 DQ5 DQ6  
Description  
G
H
A12  
A13  
WE  
A9  
A8  
The GS71108A is a high speed CMOS Static RAM organized  
as 131,072 words by 8 bits. Static design eliminates the need  
for external clocks or timing strobes. The GS 71108 operates  
on a single 3.3 V power supply and all inputs and outputs are  
TTL-compatible. The GS71108A is available in the 6 mm x 8  
mm Fine Pitch BGA package.  
NC  
A10  
NC  
Package U  
6 mm x 8 mm, 0.75 mm Bump Pitch  
Top View  
Pin Descriptions  
Symbol  
A0A16  
DQ1DQ8  
CE  
Description  
Address input  
Data input/output  
Chip enable input  
Write enable input  
Output enable input  
+3.3 V power supply  
WE  
OE  
V
DD  
V
Ground  
SS  
NC  
No connect  
Rev: 1.10a 3/2011  
1/11  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS71108AU  
Block Diagram  
A0  
Row  
Decoder  
Memory Array  
Address  
Input  
Buffer  
Column  
Decoder  
A16  
CE  
WE  
OE  
I/O Buffer  
Control  
DQ8  
DQ1  
Truth Table  
CE  
V
Current  
OE  
WE  
DQ1 to DQ8  
DD  
H
L
L
L
X
L
X
H
L
Not Selected  
Read  
ISB1, ISB2  
X
H
Write  
IDD  
H
High Z  
Note:  
X: “H” or “L”  
Rev: 1.10a 3/2011  
2/11  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS71108AU  
Absolute Maximum Ratings  
Parameter  
Symbol  
Rating  
Unit  
Supply Voltage  
VDD  
0.5 to +4.6  
V
0.5 to V +0.5  
DD  
Input Voltage  
VIN  
V
(4.6 V max.)  
0.5 to V +0.5  
DD  
Output Voltage  
VOUT  
V
(4.6 V max.)  
Allowable power dissipation  
Storage temperature  
PD  
0.7  
W
o
TSTG  
55 to 150  
C
Note:  
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended  
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.  
Recommended Operating Conditions  
Parameter  
Supply Voltage for -7/-8/-10/-12  
Input High Voltage  
Symbol  
Min  
3.0  
Typ  
3.3  
Max  
Unit  
V
3.6  
V
V
V
DD  
V
+0.3  
VIH  
VIL  
2.0  
DD  
Input Low Voltage  
0.3  
0.8  
Ambient Temperature,  
Commercial Range  
o
TAc  
TAI  
0
70  
85  
C
Ambient Temperature,  
Industrial Range  
o
40  
C
Notes:  
1. Input overshoot voltage should be less than V +2 V and not exceed 20 ns.  
DD  
2. Input undershoot voltage should be greater than 2 V and not exceed 20 ns.  
Rev: 1.10a 3/2011  
3/11  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS71108AU  
Capacitance  
Parameter  
Symbol  
CIN  
Test Condition  
VIN = 0 V  
Max  
Unit  
pF  
Input Capacitance  
Output Capacitance  
5
7
COUT  
VOUT = 0 V  
pF  
Notes:  
1. Tested at TA = 25°C, f = 1 MHz  
2. These parameters are sampled and are not 100% tested.  
DC I/O Pin Characteristics  
Parameter  
Symbol  
Test Conditions  
Min  
Max  
Input Leakage  
Current  
VIN = 0 to V  
DD  
IIL  
1 uA  
1 uA  
1 uA  
Output High Z  
Output Leakage  
Current  
ILO  
1 uA  
VOUT = 0 to V  
DD  
Output High Voltage  
Output Low Voltage  
VOH  
VOL  
IOH = 4 mA  
2.4  
ILO = +4 mA  
0.4 V  
Power Supply Currents  
0 to 70°C  
–40 to 85°C  
8 ns 10 ns 12 ns  
Parameter  
Symbol  
Test Conditions  
7 ns  
8 ns  
10 ns 12 ns  
7 ns  
CE VIL  
Operating  
Supply  
Current  
All other inputs  
VIH or VIL  
Min. cycle time  
IOUT = 0 mA  
IDD  
140 mA 120 mA 95 mA 80 mA 145 mA 125 mA 100 mA 85 mA  
CE VIH  
Standby  
Current  
All other inputs  
VIH or VIL  
Min. cycle time  
ISB1  
25 mA 20 mA 20 mA 15 mA 30 mA  
25 mA 25 mA 20 mA  
CE VDD – 0.2 V  
All other inputs  
VDD – 0.2 V or 0.2 V  
Standby  
Current  
ISB2  
2 mA  
5 mA  
Rev: 1.10a 3/2011  
4/11  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS71108AU  
AC Test Conditions  
Output Load 1  
Parameter  
Input high level  
Input low level  
Conditions  
VIH = 2.4 V  
VIL = 0.4 V  
tr = 1 V/ns  
tf = 1 V/ns  
1.4 V  
DQ  
1
30pF  
50Ω  
Input rise time  
VT = 1.4 V  
Input fall time  
Input reference level  
Output reference level  
Output load  
Output Load 2  
1.4 V  
3.3 V  
Fig. 1& 2  
589Ω  
434Ω  
DQ  
Notes:  
1
1. Include scope and jig capacitance.  
5pF  
2. Test conditions as specified with output loading as shown in Fig. 1  
unless otherwise noted.  
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ  
AC Characteristics  
Read Cycle  
-7  
-10  
-12  
-8  
Parameter  
Symbol  
Unit  
Min  
7
Max  
7
Min  
8
Max  
Min  
10  
3
Max  
Min  
12  
3
Max  
12  
12  
5
Read cycle time  
tRC  
tAA  
8
10  
10  
4
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address access time  
3
3
Chip enable access time (CE)  
Output enable to output valid (OE)  
Output hold from address change  
Chip enable to output in low Z (CE)  
Output enable to output in low Z (OE)  
Chip disable to output in High Z (CE)  
Output disable to output in High Z (OE)  
tAC  
7
8
tOE  
3
3.5  
4
tOH  
3.5  
3
5
6
tLZ*  
tOLZ*  
tHZ*  
tOHZ*  
3
3
3
3
0
0
0
0
3.5  
4
5
* These parameters are sampled and are not 100% tested  
Rev: 1.10a 3/2011  
5/11  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS71108AU  
Read Cycle 1: CE = OE = V , WE = V  
IL  
IH  
tRC  
Address  
Data Out  
tAA  
tOH  
Previous Data  
Data valid  
Read Cycle 2: WE = V  
IH  
tRC  
Address  
CE  
tAA  
tAC  
tHZ  
tLZ  
OE  
tOE  
tOHZ  
tOLZ  
DATA VALID  
Data Out  
High impedance  
Rev: 1.10a 3/2011  
6/11  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS71108AU  
Write Cycle  
-7  
-8  
-10  
-12  
Parameter  
Symbol  
Unit  
Max  
Min  
7
Max  
Min  
8
Max  
Min  
10  
7
Max  
Min  
12  
8
Write cycle time  
Address valid to end of write  
Chip enable to end of write  
Data set up time  
tWC  
tAW  
tCW  
tDW  
tDH  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
5
5.5  
5.5  
4
5
7
8
3
5
6
Data hold time  
0
0
0
0
Write pulse width  
tWP  
tAS  
5
5.5  
0
7
8
Address set up time  
0
0
0
Write recovery time (WE)  
Write recovery time (CE)  
Output Low Z from end of write  
tWR  
tWR1  
0
0
0
0
0
0
0
0
*
3
3
3
3
tWLZ  
*
Write to output in High Z  
3
3.5  
4
5
ns  
tWHZ  
* These parameters are sampled and are not 100% tested  
Write Cycle 1: WE control  
tWC  
Address  
OE  
tAW  
tWR  
tCW  
CE  
tAS  
tWP  
WE  
tDW  
tDH  
DATA VALID  
Data In  
Data Out  
tWHZ  
tWLZ  
HIGH IMPEDANCE  
Rev: 1.10a 3/2011  
7/11  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS71108AU  
Write Cycle 2: CE control  
tWC  
Address  
OE  
tAW  
tWR1  
tAS  
tCW  
CE  
tWP  
WE  
tDW  
tDH  
DATA VALID  
Data In  
Data Out  
HIGH IMPEDANCE  
Rev: 1.10a 3/2011  
8/11  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS71108AU  
6 mm x 8 mm Fine Pitch BGA  
8 . 0 0 ± 0 . 1 0  
0.10  
5 . 2 5  
Rev: 1.10a 3/2011  
9/11  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS71108AU  
Ordering Information  
*
Package  
Access Time  
Temp. Range  
Part Number  
GS71108AU-7  
GS71108AU-8  
6 mm x 8 mm Fine Pitch BGA  
6 mm x 8 mm Fine Pitch BGA  
7 ns  
8 ns  
Commercial  
Commercial  
Commercial  
Commercial  
Industrial  
GS71108AU-10  
GS71108AU-12  
GS71108AU-7I  
GS71108AU-8I  
GS71108AU-10I  
GS71108AU-12I  
GS71108AGU-7  
GS71108AGU-8  
GS71108AGU-10  
GS71108AGU-12  
GS71108AGU-7I  
GS71108AGU-8I  
GS71108AGU-10I  
6 mm x 8 mm Fine Pitch BGA  
10 ns  
12 ns  
7 ns  
6 mm x 8 mm Fine Pitch BGA  
6 mm x 8 mm Fine Pitch BGA  
6 mm x 8 mm Fine Pitch BGA  
8 ns  
Industrial  
6 mm x 8 mm Fine Pitch BGA  
10 ns  
12 ns  
7 ns  
Industrial  
6 mm x 8 mm Fine Pitch BGA  
Industrial  
RoHS-compliant 6 mm x 8 mm Fine Pitch BGA  
RoHS-compliant 6 mm x 8 mm Fine Pitch BGA  
RoHS-compliant 6 mm x 8 mm Fine Pitch BGA  
RoHS-compliant 6 mm x 8 mm Fine Pitch BGA  
RoHS-compliant 6 mm x 8 mm Fine Pitch BGA  
RoHS-compliant 6 mm x 8 mm Fine Pitch BGA  
RoHS-compliant 6 mm x 8 mm Fine Pitch BGA  
RoHS-compliant 6 mm x 8 mm Fine Pitch BGA  
Commercial  
Commercial  
Commercial  
Commercial  
Industrial  
8 ns  
10 ns  
12 ns  
7 ns  
8 ns  
Industrial  
10 ns  
12 ns  
Industrial  
GS71108AGU-12I  
Industrial  
Note:  
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. For example: GS71108AU-8T.  
Rev: 1.10a 3/2011  
10/11  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS71108AU  
1Mb Asynchronous Datasheet Revision History  
Rev. Code: Old;  
New  
Types of Changes  
Format or Content  
Page #/Revisions/Reason  
• Creation of new datasheet  
71108A_r1  
• Added 6 ns speed bin to entire document  
71108A_r1; 71108A_r1_01  
Content  
Content  
• Updated all power numbers  
• Changed 6 mm x 10 mm package designator from U to X  
71108A_r1_01; 71108A _r1_02  
• Updated Recommended Operating Conditions table on page 3  
• Updated Power Supply Currents table  
71108A_r1_02; 71108A _r1_03  
Content  
• Changed FPBGA package from 6 x 10 to 6 x 8 (package U)  
• Removed 6 ns speed bin from entire document  
• Added 7 ns speed bin to entire document  
71108A_r1_03; 71108A _r1_04  
71108A_r1_04; 71108A _r1_05  
71108A_r1_05; 71108A _r1_06  
Content  
Content  
Content  
• Added missing 300 mil SOJ mechanical drawing  
• Updated format  
• Added RoHS-compliant information for TSOP-II package  
• Added RoHS-compliant information for FP-BGA package  
• Added RoHS-compliant 400 mil, 32-pin SOJ  
• Updated to MP in ordering information table  
71108A_r1_06; 71108A _r1_07  
71108A_r1_07; 71108A _r1_08  
71108A_r1_08; 71108A _r1_09  
Content  
Content  
Content  
• Removed Status column from Ordering Information Table  
• Removed SOJ package reference from entire document  
• (Rev1.10a: Removed TSOP-II references due to EOL (EOL_091016111-  
CY)  
71108A_r1_09; 71108A _r1_10  
Content  
Rev: 1.10a 3/2011  
11/11  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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