T816-4500-20 [GREEGOO]
High Power Semiconductor Devices;
| 型号： | T816-4500-20 |
| 厂家： | 
GREEGOO |
| 描述： | High Power Semiconductor Devices |
| 文件： | 总4页 (文件大小：374K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1-ꢀꢁ
High Power Semiconductor Devices
Phase control thyristor
Tꢂ1ꢃ ꢄꢅ00-1ꢂ-ꢆꢆ
Key Parameters
Voltage Ratings
1
V DRM
I T(AV)
I TSM
V TO
r T
1800~2200
4540
V
A
Device Type VDRM/VRRM(V)
Test Conditions
65.8
kA
V
0.96
1800
T C = 25，125 °C
I DRM = I RRM
T816 4500-18
0.059
2000
=
450 mA
T816 4500-20
mΩ
2200
T816 4500-22
V DM = V DRM
V RM = V RRM
tp = 10 ms
Applications
High power drive
High voltage supplies
Motor control
V DSM = V DRM + 100
V RSM = V RRM + 100
Features
Outline
Double-side cooling
High mean current
High surge current
Thermal & Mechanical Data
Symb.
Parameter
Max Unit
Min Type
Thermal Resistance
R jc
K / W
-
-
-
-
0.0065
0.002
Junction to Case
Thermal Resistance
Case ro Heatsink
Junction Temperature
Storage Temperature
Mounting Force
Weight
R cs
K / W
T v j
T stg
F
°
°
C
C
125
140
-
-40
-40
-
-
-
kN
kg
80
2.5
m
-
-
Current Ratings
Symb.
Parameter
Test
Conditions
Type
Min
Max
4540
7130
65.8
Unit
Half Sine Wave, TC=70 oC
A
A
I T(AV)
Mean On-State Current
-
-
-
-
-
-
-
-
TC =70 oC
I T(RMS) RMS On-State Current
10ms, Half Sine Wave, TC =125 oC, VR = 0
Sine Wave, 10ms
kA
I TSM
I 2t
Surge (non-repetitive) On-State Current
Limiting load integral
2160
104A2s
Greegoo Electric 5.2008
1-ꢀꢄ
High Power Semiconductor Devices
Phase control thyristor
Tꢂ1ꢃ ꢄꢅ00-1ꢂ-ꢆꢆ
Characteristics
Symb.
Parameter
Test
Conditions
Min Type Max
Unit
1
VTM Peak on-state voltage
IDRM Forward leakage current
Reverse leakage current
T C = 25 °C，I TM
=
V
6000 A
-
-
1.45
T C = 25 °C，125 °C，V DRM/V RRM
mA
-
-
450
IRRM
VTO
r T
Threshold voltage
Slope resistance
Holding current
Latching current
T vj = 125 °C
T vj = 125 °C
V
mΩ
mA
mA
-
-
-
-
-
-
-
-
0.96
0.059
450
IH
T C = 25 °C，I G = 400 mA，I TM = 50 A，V D = 12 V
T C = 25 °C，I G = 400 mA，V D = 12 V
IL
1000
Dynamic Parameters
Symb.
Parameter
Test
Conditions
Min Type Max
Unit
Critical rate of rise of
off-state voltage
T C = 125 °C, 67%V DRM
dv /dt
V/µs
-
-
-
-
300
200
T C = 125 °C，V DM = 2/3 V DRM，f = 50 Hz，t = 5 s，
I TM = (2～3) IT(AV)，I FG = 1.0 A，tr = 0.5 µs
Critical rate of rise of
on-state current
A/µs
µs
di/dt
t q
T C = 125 °C，tp = 1000 µs，V DM = 67% V DRM，f = 1 Hz，
Turn-off time
-
-
400
-
-
25
I =
250 A
A/µs，
T
dv/dt = 30 V/µs，VR ≥ 50 V，-di/dt =
T C = 25 °C，-di /dt = 5 A/µs，tp = 700 µs，I T = 500 A，
V R = 50 V, trapezoid wave
Q r
Recovery Charge
µC
4500
Gate Parameters
Symb.
I GT
Parameter
Test
T C = 25 °C，V D = 12V，R L = 6Ω
T C = 25 °C，V D = 12V，R L = 6Ω
T C = 125 °C，V D = V DRM
Conditions
Min Type Max
Unit
mA
V
Gate trigger current
Gate trigger voltage
Gate non-trigger voltage
30
-
-
-
-
-
-
-
-
-
200
3
VGT
VGD
V
0.3
-
-
T C = 125 °C，square wave，t = 3s，open circuit
T C = 125 °C，sine wave，t = 3s，open circuit
T C = 125 °C，square wave，t = 3s，open circuit
T C = 125 °C，square wave，t = 3s，open circuit
T C = 125 °C，square wave，t = 3s，open circuit
VFGM Peak forward gate voltage
VRGM Peak reverse gate voltage
I FGM Peak forward gate current
V
16
5
V
-
A
-
4
PGM
Gate power losses
W
W
-
20
4
PG(AV) Gate power losses (mean)
-
Maximum Thermal Impedance Vs. Time
Peak On-state Voltage Vs. Peak On-state Current
0.007
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.006
0.005
0.004
0.003
0.002
0.001
0.000
T j = 125 °C
0.001
0.01
0.1
Time / s
1
10
100
100
1000
I TM / A
10000
Fig1. Peak On-state Voltage Vs. Peak On-state Current
Fig2. Maximum Thermal Impedance Vs. Time
Greegoo Electric 5.2008
1-ꢀꢅ
High Power Semiconductor Devices
Phase control thyristor
Tꢂ1ꢃ ꢄꢅ00-1ꢂ-ꢆꢆ
Maximum Power Dissipation Vs. Mean On-state Current
Maximum Case Temperature Vs. Mean On-state Current
10000
8000
6000
4000
2000
0
130
120
110
100
90
1
▲=180°
120°
90°
60°
30°
80
30°
70
60°
90°
▲=180°
60
120°
50
0
1000
2000
3000
4000
5000
6000
0
1000
2000
3000
4000
5000
6000
I T(AV) / A
I T(AV) / A
Fig3. Maximum Power Dissipation Vs. Mean On-state Current
Fig4. Maximum Case Temperature Vs. Mean On-state Current
Maximum Case Temperature Vs. Mean On-state Current
Maximum Power Dissipation Vs. Mean On-state Current
7000
130
DC
▲=270°
6000
5000
4000
3000
2000
1000
0
120
110
100
90
180°
120°
90°
60°
30°
30°
60°
90°
120°
180°
▲=270°
DC
80
70
0
1000
2000
3000
4000
5000
6000
0
1000
2000
3000
I T(AV) / A
4000
5000
6000
I T(AV) / A
Fig5. Maximum Power Dissipation Vs. Mean On-state Current
Surge Current Vs. Cycles
Fig6. Maximum Case Temperature Vs. Mean On-state Current
I 2t Vs. Time
70
60
50
40
30
20
10
25.00
20.00
15.00
10.00
5.00
0.00
0
1
1
10
10
100
n / @50 Hz
Time / ms
Fig8. I2 t Vs. Time
Fig7. Surge Current Vs. Cycles
Greegoo Electric 5.2008
1-ꢀꢃ
High Power Semiconductor Devices
Phase control thyristor
Tꢂ1ꢃ ꢄꢅ00-1ꢂ-ꢆꢆ
V GT Vs. I GT
Gate Trigger Area at various Temperature
16
14
12
10
8
5
4
3
2
1
0
1
P GM
=
20 W
T j= - 40 o
C
A
T j=25 o
C
6
4
T j=125oC
2
B
0
0
1
2
3
4
0
100
200
300
400
500
C
I GT / A
I GT / mA
Fig9. VGT Vs. IGT
Fig10. Gate Trigger Area at various Temperature
A is Recommended Triggering Area.
B is Unreliable Triggering Area.
C is Recommended Gate Load Line.
Greegoo Electric 5.2008
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