SSF3N80D_15 [GOOD-ARK]
800V N-Channel MOSFET;
| 型号： | SSF3N80D_15 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 800V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：995K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF3N80D
800V N-Channel MOSFET
Main Product Characteristics
VDSS
RDS(on)
ID
800V
3.8Ω (typ.)
3A
MarkingandPin
Assignment
TO-252
SchematicDiagram
Features and Benefits
AdvancedMOSFETprocesstechnology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
150℃operating temperature
Leadfreeproduct
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
devicefor useinpower switching applicationandawidevarietyof other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
3
1.9
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
A
12
80
W
W/°C
V
Power Dissipation③
PD @TC = 25°C
Linear Derating Factor
0.64
800
VDS
Drain-Source Voltage
VGS
Gate-to-Source Voltage
± 30
216
V
EAS
Single Pulse Avalanche Energy @ L=30mH
Avalanche Current @ L=30mH
Operating Junction and Storage Temperature Range
mJ
A
IAS
3.8
TJ TSTG
-55 to + 150
°C
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Page 1 of 7
Rev.1.0
SSF3N80D
800V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
—
Max.
1.56
110
40
Units
℃/W
℃/W
℃/W
RθJC
Junction-to-case③
—
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
RθJA
—
Electrical Characteristics@TA=25℃ unless otherwise specified
Symbol Parameter
Min.
800
—
—
2
Typ.
—
Max.
—
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS=10V,ID = 1.5A
TJ = 125℃
3.8
8.9
—
4.8
—
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source on-resistance
Gate threshold voltage
Ω
V
4
VDS = VGS, ID = 250μA
TJ = 125℃
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
—
—
1
VDS = 800V,VGS = 0V
TJ = 125℃
Drain-to-Source leakage current
Gate-to-Source forward leakage
μA
nA
—
50
100
-100
—
—
VGS =30V
IGSS
—
VGS = -30V
Qg
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
11.2
3.3
5.1
11.3
14.2
24.3
15.3
386
50.4
3.73
ID = 3A,
nC
ns
VDS=400V,
Qgs
Qgd
td(on)
tr
—
VGS = 10V
—
—
VGS=10V, VDS=400V,
—
RL=133Ω,
RGEN=25Ω
ID=3A
td(off)
tf
Turn-Off delay time
Fall time
—
—
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
—
VGS = 0V
VDS = 25V
ƒ = 1MHz
pF
—
—
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symbol
showing the
IS
—
—
3
A
integral reverse
p-n junction diode.
IS=3A, VGS=0V
TJ = 25°C, IF =3A,
di/dt = 100A/μs
Pulsed Source Current
(Body Diode)
ISM
—
—
12
A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
0.88
989
1.4
—
V
ns
nC
Qrr
2405
—
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Page 2 of 7
Rev.1.0
SSF3N80D
800V N-Channel MOSFET
Test Circuits and Waveforms
Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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Page 3 of 7
Rev.1.0
SSF3N80D
800V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Page 4 of 7
Rev.1.0
SSF3N80D
800V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
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Page 5 of 7
Rev.1.0
SSF3N80D
800V N-Channel MOSFET
Mechanical Data
TO-252 PACKAGE OUTLINE DIMENSION
Dimension In Millimeters
Dimension In Inches
Min Nom Max
Symbol
Min
2.200
0.950
0.500
0.450
0.450
6.450
5.200
5.950
2.240
4.430
9.450
1.250
0.600
0.000
Nom
Max
2.400
1.250
0.700
0.550
0.550
6.750
5.400
6.250
2.340
4.730
9.950
1.750
0.900
0.100
A
B
b
b1
C
D
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.087
0.037
0.020
0.018
0.018
0.254
0.205
0.234
0.088
0.174
0.372
0.049
0.024
0.000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.094
0.049
0.028
0.022
0.022
0.266
0.213
0.246
0.092
0.186
0.392
0.069
0.035
0.004
D1
E
e1
e2
L1
L2
L3
K
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Page 6 of 7
Rev.1.0
SSF3N80D
800V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF3N80D
Package (Available)
TO-252（DPAK）
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit（options）
Package
Type
Units/Tape Tapes/Inner
Box
Units/Inner
Box
Inner
Boxes/Carton
Units/Carton
Box
Box
TO-252
TO-252
TO-252
2500
2500
800
2
1
5
5000
2500
4000
7
10
8
35000
25000
32000
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ to 150℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
VDSS/VCES/VR
Bias(HTRB)
High
Tj=150℃@ 100% of
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
Max VGSS
Bias(HTGB)
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Page 7 of 7
Rev.1.0
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