SSF2616E [GOOD-ARK]
20V Dual N-Channel MOSFET;
| 型号： | SSF2616E |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 20V Dual N-Channel MOSFET |
| 文件： | 总6页 (文件大小：723K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF2616E
20V Dual N-Channel MOSFET
DESCRIPTION
The SSF2616E uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
GENERAL FEATURES
● VDS = 20V,ID = 7A
Schematic Diagram
RDS(ON) < 30mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 23mΩ @ VGS=4V
RDS(ON) < 22mΩ @ VGS=4.5V
ESD Rating：2000V HBM
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●Battery protection
●Load switch
●Power management
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
SSF2616E
SSF2616E
SOP-8
Ø330mm
12mm
2500 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
±12
7
VGS
A
ID(25℃)
ID(70℃)
IDM
Drain Current-Continuous@ Current-Pulsed (Note 1)
5
A
25
A
Maximum Power Dissipation
1.5
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83
℃/W
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Page 1 of 6
Rev.1.0
SSF2616E
20V Dual N-Channel MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Symbol
Condition
Min Typ
Max
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
VGS=±4.5V,VDS=0V
20
V
1
μA
nA
uA
±200
±10
Gate-Body Leakage Current
IGSS
VGS(th)
RDS(ON)
gFS
VGS=±10V,VDS=0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VDS=VGS,ID=250μA
VGS=4.5V, ID=6.5A
VGS=4V, ID=6A
0.6
0.75
16.5
17
1.2
22
23
26
30
V
mΩ
mΩ
mΩ
mΩ
S
Drain-Source On-State Resistance
VGS=3.1V, ID=5.5A
19
VGS=2.5V, ID=5.5A
22
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
VDS=10V,ID=6.5A
6.6
Clss
Coss
Crss
600
330
140
PF
PF
PF
VDS=8V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
10
11
35
30
10
2.3
3
20
25
70
60
15
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
VDS=10V,ID=7A,
VGS=4.5V
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.5A
0.84
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 6
Rev.1.0
SSF2616E
20V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
toff
tf
td(on)
td(off)
Vdd
90%
90%
Rl
Vin
VOUT
INVERTED
D
Vout
10%
10%
50%
Vgs
Rgen
90%
50%
G
VIN
S
10%
PULSE WIDTH
Figure 2: Switching Waveforms
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
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Page 3 of 6
Rev.1.0
SSF2616E
20V Dual N-Channel MOSFET
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
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Page 4 of 6
Rev.1.0
SSF2616E
20V Dual N-Channel MOSFET
Vsd Source-Drain Voltage (V)
Qg Gate Charge (nC)
Figure 12 Source- Drain Diode Forward
Figure 11 Gate Charge
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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Page 5 of 6
Rev.1.0
SSF2616E
20V Dual N-Channel MOSFET
SOP-8 PACKAGE INFORMATION
NOTES：
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact
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Page 6 of 6
Rev.1.0
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