SSF1030_15 [GOOD-ARK]
100V N-Channel MOSFET;
| 型号： | SSF1030_15 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 100V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：1063K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF1030
100V N-Channel MOSFET
Main Product Characteristics
VDSS 100V
RDS(on) 20.5mΩ (typ.)
ID 45A
①
MarkingandPin
SchematicDiagram
Assignment
TO-220
Features and Benefits
AdvancedProcessTechnology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
175℃operating temperature
Leadfreeproduct
Description
These N-Channel enhancement mode power field effect transistors are produced using
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute Max Rating
Symbol
Parameter
Max.
45 ①
32 ①
180
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
A
Power Dissipation ③
163
W
W/°C
V
PD @TC = 25°C
Linear Derating Factor
1.08
VDS
Drain-Source Voltage
100
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.27mH
Avalanche Current @ L=0.27mH
Operating Junction and Storage Temperature Range
88
mJ
A
IAS
25.5
TJ TSTG
-55 to +175
°C
www.goodark.com
Page 1 of 7
Rev.2.2
SSF1030
100V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
—
Max.
0.92
62
Units
°C/W
°C/W
°C/W
RθJC
Junction-to-case ③
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
—
RθJA
—
40
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
100
—
—
2
Typ.
—
Max.
—
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID= 250μA
VGS=10V,ID =30A
TJ = 125°C
20.5
44.4
—
22
—
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source on-resistance
Gate threshold voltage
mΩ
V
4
VDS = VGS, ID = 250μA
TJ = 125°C
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.56
—
—
1
VDS =100V,VGS = 0V
TJ = 125°C
Drain-to-Source leakage current
Gate-to-Source forward leakage
μA
nA
—
50
100
-100
—
—
VGS =20V
IGSS
—
VGS = -20V
Qg
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
46.3
12.0
16.9
13.9
13.2
37.8
11.1
2042
144
114
ID = 30A,
nC
nS
pF
VDS=30V,
Qgs
Qgd
td(on)
tr
—
VGS = 10V
—
—
VGS=10V, VDD =30V,
—
RL=15Ω,
RGEN=2.55Ω
ID =2A
td(off)
tf
Turn-Off delay time
Fall time
—
—
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
—
VGS = 0V
VDS = 25V
ƒ = 1MHz
—
—
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symbol
showing the
IS
—
—
60 ①
A
integral reverse
Pulsed Source Current
(Body Diode)
ISM
—
—
240
A
p-n junction diode.
IS=30A, VGS=0V, TJ = 25°C
TJ = 25°C, IF =30A, di/dt =
100A/μs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
0.91
45.1
101
1.3
—
V
nS
nC
Qrr
—
www.goodark.com
Page 2 of 7
Rev.2.2
SSF1030
100V N-Channel MOSFET
Test Circuits and Waveforms
Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
www.goodark.com
Page 3 of 7
Rev.2.2
SSF1030
100V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
www.goodark.com
Page 4 of 7
Rev.2.2
SSF1030
100V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.goodark.com
Page 5 of 7
Rev.2.2
SSF1030
100V N-Channel MOSFET
Mechanical Data
TO-220 PACKAGE OUTLINE DIMENSION_GN
E
A
ФP
ϴ
1
D
D2
ФP1
ϴ
ϴ2
D1
b1
b
ϴ4
A1
L
c
E
e
Dimension In Millimeters
Dimension In Inches
Symbol
Min
Nom
1.300
2.400
1.270
1.370
Max
Min
Nom
0.051
0.094
0.050
0.054
0.020
0.614
1.130
0.360
0.394
0.400
0.142
0.059
0.1BSC
0.516
Max
A
A1
b
b1
c
-
-
-
-
2.200
2.600
0.087
0.102
-
-
-
-
1.270
1.470
0.050
0.058
-
-
-
-
0.500
-
-
-
-
-
-
-
-
-
-
-
-
D
15.600
28.700
9.150
10.000
10.160
3.600
D1
D2
E
E1
ФP
ФP1
e
9.900
10.100
0.390
0.398
-
-
-
-
-
-
-
-
1.500
2.54BSC
12.900
13.100
13.300
0.508
0.524
L
70
70
30
30
70
70
70
30
-
-
-
-
-
-
-
-
-
-
ϴ1
ϴ2
-
-
50
10
90
50
3
ϴ
4
ϴ
www.goodark.com
Page 6 of 7
Rev.2.2
SSF1030
100V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF1030
Package (Available)
TO-220
Operating Temperature Range
C : -55 to175 ºC
Devices per Unit
Package Units/ Tubes/Inner
Units/Inner Inner
Units/Carton
Type
Tube
Box
Box
Boxes/Carton Box
Box
TO-220
50
20
1000
6
6000
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ to 175℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
VDSS/VCES/VR
Bias(HTRB)
High
Tj=125℃ or 175℃ @
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
100% of Max VGSS
Bias(HTGB)
www.goodark.com
Page 7 of 7
Rev.2.2
相关型号：
SSF1090
Power Field-Effect Transistor, 15A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
GOOD-ARK
©2020 ICPDF网 联系我们和版权申明