SSF1016 [GOOD-ARK]
100V N-Channel MOSFET;
| 型号： | SSF1016 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 100V N-Channel MOSFET 局域网 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：1299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF1016
100V N-Channel MOSFET
FEATURES
ID =75A
Advanced trench process technology
BV=100V
avalanche energy, 100% test
RDS (ON) =16mΩ (Max.)
Fully characterized avalanche voltage and current
Lead free product
DESCRIPTION
The SSF1016 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1016 is assembled
in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
SSF1016 Top View (T0-220)
Absolute Maximum Ratings
Parameter
Max.
75
Units
ID@Tc=25ْC Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V
A
65
IDM
Pulsed drain current ①
300
273
1.5
Power dissipation
W
W/ْC
V
PD@TC=25ْC
Linear derating factor
VGS
EAS
EAR
dv/dt
TJ
Gate-to-Source voltage
±20
380
TBD
31
Single pulse avalanche energy ②
Repetitive avalanche energy
Peak diode recovery voltage
Operating Junction and
mJ
mJ
v/ns
–55 to +175
Cْ
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Junction-to-case
Junction-to-ambient
Min.
—
Typ.
0.55
—
Max.
—
Units
Cْ /W
RθJC
RθJA
—
62
Electrical Characteristics @TJ=25 Cْ (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=30A
VDS=VGS,ID=250μA
VDS=100V,VGS=0V
VDS=100V,
BVDSS Drain-to-Source breakdown voltage
RDS(on) Static Drain-to-Source on-resistance
VGS(th) Gate threshold voltage
100
—
—
11
—
—
—
16
4.0
2
V
mΩ
V
2.0
—
IDSS Drain-to-Source leakage current
μA
nA
—
—
—
—
10
VGS=0V,TJ=150ْC
VGS=20V
IGSS Gate-to-Source forward leakage
100
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Page 1 of 6
Rev.2.2
SSF1016
100V N-Channel MOSFET
Gate-to-Source reverse leakage
Qg Total gate charge
—
—
—
—
—
90
20
31
-100
VGS=-20V
ID=30A,VGS=10V
VDD=30V
Qgs Gate-to-Source charge
Qgd Gate-to-Drain("Miller") charge
td(on) Turn-on delay time
—
—
nC
—
—
—
—
—
—
—
18.2
15.6
70.5
13.8
3150
350
VDD=30V
ID=2A ,RL=15Ω
RG=2.5Ω
tr
td(off) Turn-Off delay time
tf Fall time
Rise time
nS
pF
VGS=10V
Ciss Input capacitance
VGS=0V
VDS=25V
f=1.0MHZ
Coss Output capacitance
Crss Reverse transfer capacitance
240
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Test Conditions
MOSFET symbol
showing the
IS
—
—
—
75
A
integral reverse
Pulsed
Source
Current
ISM
—
300
p-n junction diode.
(Body Diode) ①
VSD Diode Forward Voltage
trr Reverse Recovery Time
—
－
－
—
57
1.3
—
V
TJ=25ْC,IS=60A,VGS=0V ③
TJ=25ْC,IF=75A
nS
μC
di/dt=100A/μs ③
Qrr Reverse Recovery Charge
ton Forward Turn-on Time
107
—
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 50V,Id=37A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
EAS Test Circuit
Gate Charge Test Circuit
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Page 2 of 6
Rev.2.2
SSF1016
100V N-Channel MOSFET
Switch Time Test Circuit
Switch Waveform
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Page 3 of 6
Rev.2.2
SSF1016
100V N-Channel MOSFET
Capacitance
Transfer Characteristic
On Resistance vs. Junction Temperature
Breakdown Voltage vs. Junction Temperature
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Page 4 of 6
Rev.2.2
SSF1016
100V N-Channel MOSFET
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs. Junction
Transient Thermal Impedance Curve
Page 5 of 6
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Rev.2.2
SSF1016
100V N-Channel MOSFET
TO-220 MECHANICAL DATA
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Page 6 of 6
Rev.2.2
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