MBR1035 [GOOD-ARK]
Schottky Barrier Rectifiers; 肖特基势垒整流器器
| 型号： | MBR1035 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | Schottky Barrier Rectifiers |
| 文件： | 总3页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR10xx, MBRF10xx & MBRB10xx Series
Schottky Barrier Rectifiers
Reverse Voltage 35 to 60 Volts Forward Current 10.0 Amperes
Features
Plastic package has Underwriters Laboratory Flammability
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
Guardring for overvoltage protection
For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
Mechanical Data
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded
plastic body
Terminals: Plated leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 ounce, 2.24 grams
ITO-220AC
TO-220AC
TO-263AB(D2PAK)
Mounting Pad Layout TO-263AB
Dimensions in inches and (millimeters)
344
Maximum Ratings and Electrical Characteristics
( TC = 25oC unless otherwise noted )
Parameter
Symbol
MBR1035
MBR1045
MBR1050
MBR1060
Unit
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRRM
VRWM
VDC
35
35
35
45
45
45
50
50
50
60
60
60
Volts
Volts
Volts
Amps
Maximum DC blocking voltage
Maximum average forward rectified current (See Fig. 1)
IF(AV)
10
20
Peak repetitive forward current (sq. wave, 20KHz)
at TC=135oC
IFRM
IFSM
Amps
Amps
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
150
Peak repetitive reverse current at tp = 2.0us, 1KHz
IRRM
1.0
0.5
Amps
Voltage rate of change (rated VR)
dv/dt
10,000
V/us
Maximum instantaneous forward voltage (Note 4)
at IF=10A, TC=25oC
-
0.80
0.70
0.95
0.85
at IF=10A, TC=125oC
VF
0.57
0.84
0.72
Volts
at IF=20A, TC=25oC
at IF=20A, TC=125oC
Maximum instantaneous
reverse current at rated DC
blocking voltage (Note 4)
TC=25oC
0.10
15
mA
IR
TC=125oC
Maximum thermal resistance from junction to case
RθJC
MBR 2.0 / MBRF 4.0 / MBRB 2.0
oC/W
Volts
4500 (Note 1)
3500 (Note 2)
1500 (Note 3)
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH < 30%
VISOL
Operating junction temperature range
Storage temperature range
TJ
-55 to +150
-55 to +150
oC
oC
TSTG
Notes:
1. Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset
2. Clip mounting (on case), where leads do overlap heatsink
3. Screw mounting with 4-40 screw, where washer diameter is < 4.9 mm (0.19")
4. Pulse test: 300us pulse width, 1% duty cycle
345
RATINGS AND CHARACTERISTIC CURVES
( TA = 25oC unless otherwise noted )
346
相关型号：
MBR1035-G
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, Silicon, TO-220AC, LEAD FREE, PLASTIC PACKAGE-2
SENSITRON
MBR1035-HE3/45
DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY
MBR1035CT
肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ +175°C, Tjm = +175°C。
SIRECTIFIER
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