GAR253 [GOOD-ARK]
Rectifier Diode, 1 Phase, 1 Element, 25A, 300V V(RRM), Silicon,;型号: | GAR253 |
厂家: | GOOD-ARK ELECTRONICS |
描述: | Rectifier Diode, 1 Phase, 1 Element, 25A, 300V V(RRM), Silicon, 二极管 |
文件: | 总2页 (文件大小:117K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ꢀ
ꢀ
ꢀ
ꢀ
Low leakage
Low forward voltage drop
High current capability
High forward surge current capability
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Technology: Vacuum soldered.
Case: Transfer molded plastic.
Polarity: Color ring denotes cathode.
Lead: Plated lead, solderable per MIL-STD-202E method 208C
Mounting position: Any
Weight: 0.064 ounces, 1.8 grams
ꢁ
ꢀ
ꢀ
ꢀ
Maximum Ratings and Electrical Characteristics
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
GAR251 thru GAR256 / GARS251 thru GARS256
Button Diodes
Voltage Range 100 to 600Volts Current 25 Amps
Technical Specification:
Features:
Mechanical Data:
Dimensions in inches and (millimeters)
o
GAR251
GARS251
GAR252
GARS252
GAR253
GARS253
GAR254
GARS254
GAR256
GARS256
Parameters
Symbols
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
100
200
140
200
300
210
300
25
400
280
400
600
420
600
Volts
Volts
Volts
Amps
70
Maximum DC blocking voltage
100
Maximum Average rectified forward current at TC=105oC
I
(AV)
Peak forward surge current 8.3mS single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
400
Amps
Rating for fusing (t<8.3mS)
I2t
664
A2S
Maximum instantaneous forward voltage drop at 100A
VF
1.10
Volts
Maximum DC reverse current
at rated DC blocking voltage
TA=25oC
5.0
450
uA
IR
TC=150oC
Typical thermal resistance
RθJL
1.0
oC/W
oC
Operating and storage temperature range
Notes:
TJ, TSTG
-65 to +175
1. Enough heatsink must be considered in application.
39
ꢁRatings and Characteristic Curves
40
相关型号:
©2020 ICPDF网 联系我们和版权申明