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BAV303 [GOOD-ARK]

Switching Diode;
BAV303
型号： BAV303
厂家： GOOD-ARK ELECTRONICS    GOOD-ARK ELECTRONICS
描述：

Switching Diode

二极管
文件： 总2页 (文件大小：120K)
中文：  中文翻译
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BAV300 / 301 / 302 / 303  
Switching Diode  
Features  
ꢀ Silicon Epitaxial Planar Diodes  
ꢀ Saving space  
ꢀ Hermetic sealed parts  
ꢀ Fits onto SOD 323 / SOT 23 footprints  
ꢀ Electrical data identical with the devices  
BAV100...BAV103 / BAV200...BAV203  
Applications  
ꢀ General purposes  
Mechanical Data  
ꢀ Case: MicroMELF Glass Case  
ꢀ Weight: approx. 12 mg  
ꢀ Cathode Band Color: Black  
ꢁAbsolute Maximum Ratings  
( Tamb=25oC unless otherwise specified )  
Parameter  
Test Condition  
Part  
Symbol  
VRRM  
VRRM  
VRRM  
VRRM  
VR  
Value  
60  
Unit  
V
Peak reverse voltage  
BAV300  
BAV301  
BAV302  
BAV303  
BAV300  
BAV301  
BAV302  
BAV303  
120  
200  
250  
50  
V
V
V
Reverse voltage  
V
VR  
100  
150  
200  
250  
1
V
VR  
V
VR  
V
mA  
A
Forward current  
IF  
Peak forward surge current  
Forward peak current  
tp= 1 s, T=25oC  
IFSM  
j
mA  
f=50Hz  
IFM  
625  
ꢁThermal Characteristics  
( Tamb=25oC unless otherwise specified )  
Parameter  
Test Condition  
Symbol  
Value  
Unit  
Junction ambient  
mounted on epoxy-glass  
hard tissue, Fig 4.  
RthJA  
500  
K/W  
35 um copper clad, 0.9m2  
copper area per electrode  
oC  
oC  
Junction temperature  
T
175  
j
Stroage temperature range  
Tstg  
-65 to +175  
ꢁElectrical Characteristics  
( Tamb=25oC unless otherwise specified )  
Parameter  
Test Condition  
Part  
Symbol  
Min.  
Typ.  
Max.  
1
Unit  
V
Forward voltage  
Reverse current  
IF=100mA  
VR=50V  
VF  
IR  
nA  
nA  
nA  
nA  
uA  
uA  
uA  
uA  
V
BAV300  
BAV301  
BAV302  
BAV303  
BAV300  
BAV301  
BAV302  
BAV303  
BAV300  
BAV301  
BAV302  
BAV303  
100  
100  
100  
100  
15  
VR=100V  
VR=150V  
VR=200V  
IR  
IR  
IR  
T=100oC, VR=50V  
T=100oC, VR=100V  
T=100oC, VR=150V  
T=100oC, VR=200V  
IR  
j
IR  
15  
j
IR  
15  
j
IR  
15  
j
Breakdown voltage  
IR=100uA, tp/T=0.01, tp=0.3ms  
IR=100uA, tp/T=0.01, tp=0.3ms  
IR=100uA, tp/T=0.01, tp=0.3ms  
IR=100uA, tp/T=0.01, tp=0.3ms  
VR=0, f=1MHz  
V(BR)  
V(BR)  
V(BR)  
V(BR)  
CD  
rf  
60  
V
120  
200  
250  
V
V
pF  
Ω
Diode capacitance  
1.5  
5
Differential forward resistance  
Reverse recovery time  
IF=10mA  
ns  
IF=IR=30mA, iR=3mA, RL=100Ω  
trr  
50  
654  
ꢁTypical characteristics  
( Tamb=25oC unless otherwise specified )  
Package Dimensions in mm (inches)  
655  

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