KBPC3504TW [GENESIC]

High efficiency;
KBPC3504TW
型号: KBPC3504TW
厂家: GeneSiC Semiconductor, Inc.    GeneSiC Semiconductor, Inc.
描述:

High efficiency

文件: 总3页 (文件大小:333K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KBPC35005T/W thru KBPC3504T/W  
VRRM = 50 V - 400 V  
IO = 35 A  
Single Phase Silicon  
Bridge Rectifier  
Features  
• High efficiency  
• Silicon junction  
• Metal case  
• Types from 50 V to 400 V VRRM  
• Not ESD Sensitive  
KBPC-T/W Package  
Mechanical Data  
Case: Mounted in the bridge encapsulation  
Mounting: Hole for #10 screw  
Polarity: Marked on case  
Maximum ratings at Tc = 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW  
uses KBPC-W package)  
KBPC3502T/W KBPC3504T/W  
KBPC35005T/W KBPC3501T/W  
Conditions  
Parameter  
Symbol  
Unit  
VRRM  
VRMS  
VDC  
Tj  
200  
140  
400  
280  
Repetitive peak reverse voltage  
RMS reverse voltage  
50  
35  
100  
70  
V
V
200  
400  
DC blocking voltage  
50  
100  
V
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
Operating temperature  
Storage temperature  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics at Tc = 25 °C, unless otherwise specified  
Single phase, half sine wave, 60 Hz, resistive or inductive load  
For capacitive load derate current by 20%  
KBPC3502T/W KBPC3504T/W  
KBPC35005T/W KBPC3501T/W  
Conditions  
Parameter  
Symbol  
Unit  
Maximum average forward rectified  
current  
Tc = 55 °C  
IO  
35  
400  
1.1  
35  
400  
1.1  
35  
400  
1.1  
35  
400  
1.1  
A
8.3 ms half sine-wave  
IF = 17.5 A  
IFSM  
VF  
Peak forward surge current  
Maximum instantaneous forward  
voltage per leg  
A
V
Tc = 25 °C  
5
5
5
5
Maximum DC reverse current at  
rated DC blocking voltage per leg  
IR  
μA  
Tc = 100 °C  
500  
300  
500  
300  
500  
300  
500  
300  
Typical junction capacitance 1  
Thermal characteristics  
Typical thermal resistance 2  
Cj  
pF  
RΘJC  
°C/W  
1.4  
1.4  
1.4  
1.4  
1 - Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C.  
2 - Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink  
1
www.genesicsemi.com/silicon-products/bridge-rectifiers/  
KBPC35005T/W thru KBPC3504T/W  
2
www.genesicsemi.com/silicon-products/bridge-rectifiers/  
KBPC35005T/W thru KBPC3504T/W  
Package dimensions and terminal configuration  
Product is marked with part number and terminal configuration.  
Dimensions in inches and (millimeters)  
3
www.genesicsemi.com/silicon-products/bridge-rectifiers/  

相关型号:

KBPC3504T_W

BRIDGE RECTIFIERS
AMERICASEMI

KBPC3504W

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
DCCOM

KBPC3504W

Silicon-Bridge Rectifiers
DIOTEC

KBPC3504W

15,25,35A HIGH CURRENT BRIDGE RECTIFIER
WTE

KBPC3504W

SILICON BRIDGE RECTIFIERS
EIC

KBPC3504W

CURRENT 35.0 Amperes VOLTAGE 50 to 1000 Volts
DAESAN

KBPC3504W

SILICON BRIDGE RECTIFIERS
HY

KBPC3504W

SILICON BRIDGE RECTIFIERS
BL Galaxy Ele

KBPC3504W

HIGH CURRENT SINGLE-PHASE SILICON BRIDGE RECTIFIERS
SEMTECH

KBPC3504W

BRIDGE RECTIFIERS 35 to 50 Amps
RFE

KBPC3504W

SINGLE-PHASE SILICON BRIDGE
CHENG-YI

KBPC3504W

Bridge Rectifier Diode, 1 Phase, 35A, 400V V(RRM), Silicon,
VISHAY