GBPC3508W [GENESIC]

Single Phase Glass Passivated Silicon Bridge Rectifier;
GBPC3508W
型号: GBPC3508W
厂家: GeneSiC Semiconductor, Inc.    GeneSiC Semiconductor, Inc.
描述:

Single Phase Glass Passivated Silicon Bridge Rectifier

二极管
文件: 总4页 (文件大小:341K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GBPC3506T/W thru GBPC3510T/W  
VRRM = 600 V - 1000 V  
IO = 35 A  
Single Phase Glass Passivated  
Silicon Bridge Rectifier  
Features  
• Integrally molded heat sink provides low thermal resistance  
for maximum heat dissipation  
• High surge current capability  
• Universal 3-way terminals: snap on, wire-around, or P.C  
board mounting  
GBPC-T/W Package  
• High temperature soldering guaranteed: 260⁰C/ 10  
seconds at 5 lbs (2.3 kg) tension  
• Not ESD Sensitive  
Mechanical Data  
Case: Molded plastic with heat sink integrally mounted in the bridge  
encapsulation  
Terminals: Either nickel plated 0.25". Faston lugs or copper leads  
0.040" diameter.  
Polarity: Polarrity symbols marked on the body  
Mounting position: Bolt down on heat-sink with silicone thermal  
compound between bridge and mounting surface  
Weight: 15 grams or 0.53 ounces  
Mounting torque: 20 inch-lbs max  
Maximum ratings at Tc = 25 °C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW  
uses GBPC-W package)  
Conditions  
GBPC3510T/W  
Parameter  
Symbol  
GBPC3506T/W  
GBPC3508T/W  
Unit  
VRRM  
VRMS  
VDC  
Tj  
1000  
700  
Repetitive peak reverse voltage  
RMS reverse voltage  
600  
420  
800  
560  
V
V
1000  
DC blocking voltage  
600  
800  
V
-55 to 150  
-55 to 150  
Operating temperature  
Storage temperature  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics at Tc = 25 °C, unless otherwise specified  
Single phase, half sine wave, 60 Hz, resistive or inductive load  
For capacitive load derate current by 20%  
Conditions  
GBPC3510T/W  
Parameter  
Symbol  
GBPC3506T/W  
GBPC3508T/W  
Unit  
Maximum average forward rectified  
current  
Tc = 50 °C  
IO  
35.0  
400  
1.1  
35.0  
400  
1.1  
35.0  
400  
1.1  
A
IFSM  
VF  
single sine-wave  
IF = 17.5 A  
Peak forward surge current  
Maximum instantaneous forward  
voltage drop per leg  
A
V
Ta = 25 °C  
Ta = 125 °C  
5
5
5
Maximum DC reverse current at  
rated DC blocking voltage per leg  
IR  
I2t  
μA  
A2sec  
V
500  
660  
500  
660  
500  
660  
Rating for fusing  
RMS isolation voltage from case to  
leads  
1 ms < tm < 8.3 ms  
VISO  
2500  
2500  
2500  
Cj  
300  
1.4  
300  
1.4  
300  
1.4  
pF  
Typical junction capacitance  
Typical thermal resistance  
RΘJC  
°C/W  
1
Apr 2016  
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/  
GBPC3506T/W thru GBPC3510T/W  
2
Apr 2016  
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/  
GBPC3506T/W thru GBPC3510T/W  
3
Apr 2016  
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/  
GBPC3506T/W thru GBPC3510T/W  
Package dimensions and terminal configuration  
Product is marked with part number and terminal configuration.  
Dimensions in inches and (millimeters)  
4
Apr 2016  
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/  

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