6MBP75RTB060 [FUJI]
IPM-R3;
| 型号： | 6MBP75RTB060 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IPM-R3 |
| 文件： | 总8页 (文件大小：727K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
6MBP75RTB060
IPM-R3 series
600V / 75A 6 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol
Rating
Max.
Unit
Item
Min.
V
DC bus voltage
VDC
450
500
400
600
75
0
0
V
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current
VDC(surge)
VSC
V
200
V
VCES *1
IC
0
A
DC
-
A
1ms
ICP
150
75
-
A
Duty=74.9% -IC *2
-
W
°C
V
Collector power dissipation One transistor
Junction temperature
PC *3
Tj
198
150
20
-
-
Input voltage of power supply for Pre-Driver
Input signal voltage
VCC *4
Vin *5
Iin
-0.5
-0.5
-
V
Vcc+0.5
3
mA
V
Input signal current
Alarm signal voltage
VALM *6
IALM *7
Tstg
Vcc
20
-0.5
-
mA
°C
°C
kV
N·m
N·m
Alarm signal current
Storage temperature
125
-40
Fig.1 Measurement of case temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Topr
100
AC2.5
-20
Viso *8
-
-
-
3.5 *9
3.5 *9
Screw torque
Mounting (M5)
Terminal (M5)
*1 : Vces shall be applied to the input voltage between terminal P and U or V or W, N and U or V or W.
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.855/(75 x 2.6)x100=74.9%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter]
*4 : Vcc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*5 : Vin shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*6 : VALM shall be spplied to the voltage between terminal No. 16 and 10.
*7 : IALM shall be applied to the input current to terminal No. 16.
*8 : 50Hz/60Hz sine wave 1 minute.
*9 : Recommendable Value : 2.5 to 3.0 N·m
6MBP75RTB060
IGBT-IPM
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Item
Symbol
Condition
Min.
Typ.
Max.
1.0
2.4
-
Unit
mA
ICES
VCE=600V Vin terminal open.
-
-
INV
Collector current at off signal input
Collector-Emitter saturation voltage
VCE(sat)
VF
Ic=75A
Terminal
-
-
V
-
-
2.0
Chip
-Ic=75A
Terminal
-
2.6
-
V
Forward voltage of FWD
-
1.6
Chip
ton
toff
trr
VDC=300V,Tj=125°C
1.2
-
-
-
-
-
-
µs
Turn-on time
IC=75A Fig.1, Fig.6
3.6
0.3
-
Turn-off time
VDC=300V, IC=75A Fig.1, Fig.6
Internal wiring inductance=50nH
Main circuit wiring inductace=54nH
-
Reverse recovery time
Maximum Avalanche Energy
(A non-repetition)
PAV
40
mJ
Control circuit
Item
Symbol
Iccp
Condition
Min.
Typ.
Max. Unit
Switching Trequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
mA
mA
V
-
-
-
18
65
ICCN
-
Vin(th)
1.00
1.25
1.35
1.70
1.95
OFF
V
1.60
8.0
VZ
Rin=20k ohm
Input zener voltage
V
-
-
-
-
tALM
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Alarm signal hold time
ms
ms
ms
ohm
1.1
-
-
-
2.0
-
4.0
1575
RALM
Limiting resistor for alarm
1425
1500
Protection Section ( Vcc=15V)
Item
Symbol
Condition
Min.
Typ.
Max. Unit
113
-
-
Over Current Protection Level of Inverter circuit
Over Current Protection Delay time
SC Protection Delay time
IOC
A
Tj=125°C
-
5
-
-
tDOC
tSC
µs
µs
°C
°C
°C
Tj=125°C
-
8
Tj=125°C Fig.4
150
-
-
-
IGBT Chip Over Heating
TjOH
TjH
surface of IGBT chips
VDC=0V, Ic=0A, Case temperature
20
-
-
125
-
Over Heating Protection Hysteresis
Over Heating Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
110
-
TCOH
TCH
VUV
VH
20
-
11.0
0.2
12.5
V
0.5
-
Under Voltage Protection Hysteresis
Thermal characteristics( Tc=25°C)
Item
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Min.
Typ.
Max.
Unit
Junction to Case thermal resistance
INV
IGBT
FWD
-
-
-
-
-
0.63
°C/W
0.855 °C/W
-°C/W
Case to fin thermal resistance with compound
0.05
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Item
Condition
Min.
Typ.
Max.
Unit
Common mode rectangular noise
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
±2.0
-
-
kV
Common mode lightning surge
±5.0
-
-
kV
Interval 20s, 10 times
Judge : no over-current, no miss operating
Recommendable value
Item
DC Bus Voltage
Symbol
VDC
VCC
-
Min.
-
Typ.
Max.
400
Unit
V
-
15.0
-
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
13.5
2.5
16.5
3.0
V
Nm
Weight
Item
Symbol
Min.
Typ.
Max.
Unit
Weight
Wt
-
450
-
g
*9 : (For 1 device, Case is under the device)
6MBP75RTB060
IGBT-IPM
Vin
on
Vin(th)
Vin(th)
trr
90%
50%
Ic
90%
10%
toff
ton
Figure 1. Switching Time Waveform Definitions
off
off
/Vin
on
on
Gate on
Gate off
alarm
Vge (Inside IPM)
normal
Fault (Inside IPM)
/ALM
2ms(typ.)
tALM>Max.
tALM
tALM>Max.
Fault : Over-current, Over-heat or Under-voltage
Figure 2. Input / Output Timing Diagram
tsc
Ic
Ic
Ic
IALM
IALM
IALM
Figure. 4 Definition of tsc
P
Vcc
20k
Vin
IPM
L
DC
+
DC
300V
CT
15V
P
U
VccU
Ic
HCPL-
4504
20k
DC
VinU
N
GND
15V
Sw1
Sw2
AC200V
+
Figure 6. Switching Characteristics Test Circuit
GNDU
Vcc
V
20k
W
N
DC
VinX
Icc
Vcc
Vin
P
U
15V
4700p
Noise
GND
I PM
DC
15V
V
Earth
P.G
+8V fsw
W
Cooling
Fin
GND
N
Figure 5. Noise Test Circuit
Figure 7. Icc Test Circuit
6MBP75RTB060
IGBT-IPM
Block diagram
P
U
V
VccU
3
VinU
2
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
GNDU
VccV
1
6
VinV
5
GNDV
VccW
4
9
VinW
8
GNDW
7
W
Vcc 11
VinX 13
GND 10
VinY 14
VinZ 15
B
N
NC
12
NC
Pre-driver include following functions
1 Amplifier for drive
2 Short circuit protection
3 Under voltage lockout circuit
4 Over current protection
5 IGBT chip over heating protection
RALM
Over heating protection
circuit
ALM 16
1.5kΩ
Outline drawings, mm
Mass : 450g
6MBP75RTB060
IGBT-IPM
Characteristics
Control circuit characteristics (Respresentative)
Power supply current vs. Switching frequency
N-side
Input signal threshold voltage
vs. Power supply voltage
Tj=25°C
Tj=125°C
Tc=125°C
·········
·········
P-side
2.5
2.0
1.5
1.0
0.5
0
60
50
40
30
20
10
0
0
5
10
15
20
25
12
13
14
15
16
17
18
Switching frequency fsw (kHz)
Power supply voltage Vcc (V)
Under voltage hysterisis vs. Junction temperature
Under voltage vs. Junction temperature
14
1.0
0.8
0.6
0.4
0.2
0
12
10
8
6
4
2
0
20
40
60
80
100
120
140
20
40
60
80
100
120
140
Junction temperature Tj (°C)
Junction temperature Tj (°C)
Alarm hold time vs. Power supply voltage
Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC
3.0
2.5
2.0
1.5
1.0
0.5
200
150
100
50
0
0
12
13
14
15
16
17
18
12
13
14
15
16
17
18
Power supply voltage Vcc (V)
Power supply voltage Vcc (V)
6MBP75RTB060
IGBT-IPM
Main circuit characteristics (Respresentative)
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj=25°C(Terminal)
Tj=25°C(Chip)
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage VCE (V)
Collector-Emitter voltage VCE (V)
Collector current vs. Collector-Emitter voltage
Tj=125°C(Terminal)
Collector current vs. Collector-Emitter voltage
Tj=125°C(Chip)
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage VCE (V)
Collector-Emitter voltage VCE (V)
Forward current vs. Forward voltage
(Chip)
Forward current vs. Forward voltage
(Terminal)
150
150
100
50
0
100
50
0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
Foeward voltage VF (V)
Foeward voltage VF (V)
6MBP75RTB060
IGBT-IPM
Switching Loss vs. Collector current
Edc=300V, Vcc=15V, Tj=125°C
Switching Loss vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0
20
40
60
80
0
20
40
60
80
Collector current IC (A)
Collector current IC (A)
Reverse biased safe operating area
Transient thermal resistance
<
Vcc=15V, Tj 125°C
=
300
250
200
150
100
50
1
0.1
0
0.01
0.001
0
100
200
300
400
500
600
700
0.01
0.1
1
Collector-Emitter voltage VCE (V)
Pulse width Pw (sec.)
Power derating for IGBT (per device)
Power derating for FWD (per device)
250
200
150
100
50
200
150
100
50
0
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Case temperature Tc (°C)
Case temperature Tc (°C)
6MBP75RTB060
IGBT-IPM
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=125°C
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C
10000
1000
100
10000
1000
100
10
10
20
40
60
80
100
120
20
40
60
80
100
120
Collector current Ic (A)
Collector current Ic (A)
Reverse recovery characteristics
trr, Irr, vs. IF
100
10
1
20
40
60
80
100
120
Foeward current IF (A)
相关型号：
6MBP80RTB060
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, P610, 22 PIN
FUJI
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