2SK2890-01MR_05 [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK2890-01MR_05 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2890-01MR
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Features
Outline Drawings
TO-220F
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
Avalanche-proof
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Drain-source voltage
Symbol
VDS
Rating
30
Unit
V
Remarks
Drain(D)
Continuous drain current
Pulsed drain current
ID
±50
±200
±16
A
ID[puls]
VGS
EAV
PD
A
Gate(G)
Gate-source peak voltage
Maximum avalanche energy
Maximum power dissipation
Operating and storage
temperature range
V
1441.5
*1
mJ
W
°C
°C
50
Tch
+150
-55 to +150
Source(S)
Tstg
*1 L=0.769mH, Vcc=12V
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Test Conditions
Item
Symbol
V(BR)DSS
VGS(th)
IDSS
ID=1mA
ID=1mA
VDS=30V
VGS=0V
VDS=VGS
VGS=0V
V
30
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
1.0
1.5
10
0.2
10
8.0
5.3
70
2.0
500
1.0
100
V
Tch=25°C
µA
mA
nA
Tch=125°C
16V
VGS=±
VDS=0V
Gate-source leakage current
IGSS
10.5
6.8
ID=50A VGS=10V
VGS=4V
mΩ
mΩ
S
Drain-source on-state resistance
RDS(on)
VGS=10V
35
ID=50A
VDS=25V
Forward transconductance
Input capacitance
gfs
3900
2000
850
17
5850
Ciss
Coss
Crss
td(on)
tr
VDS=25V
VGS=0V
f=1MHz
VCC=15V RG=10 Ω
ID=100A
3000
1280
30
Output capacitance
Reverse transfer capacitance
Turn-on time
pF
ns
70
120
380
270
VGS=10V
250
180
Turn-off time
td(off)
tf
L=100µH
Tch=25°C
A
50
Avalanche capability
IAV
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=50A VGS=0V Tch=25°C
IF=50A
1.0
65
0.12
1.5
VSD
trr
ns
µC
-di/dt=100A/µs Tch=25°C
Qrr
Thermal characteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Min.
Typ.
Max. Units
2.50
°C/W
Thermal resistance
62.5
°C/W
www.fujielectric.co.jp/fdt/scd
1
2SK2890-01MR
FUJI POWER MOSFET
Characteristics
2
2SK2890-01MR
FUJI POWER MOSFET
3
2SK2890-01MR
FUJI POWER MOSFET
www.fujielectric.co.jp/fdt/scd
4
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