2SK2082-01 [FUJI]
N-channel MOS-FET; N沟道MOS - FET的
| 型号： | 2SK2082-01 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-channel MOS-FET |
| 文件： | 总2页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-channel MOS-FET
2SK2082-01
FAP-IIA Series
900V 1,4W
9A
150W
> Features
> Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
V
Drain-Source-Voltage
V
900
DS
V
900
V
Drain-Gate-Voltage (RGS=20KW)
Continous Drain Current
Pulsed Drain Current
DGR
I
9
36
A
D
I
A
D(puls)
Gate-Source-Voltage
V
±30
V
GS
Max. Power Dissipation
Operating and Storage Temperature Range
P
150
W
°C
°C
D
T
150
ch
T
-55 ~ +150
stg
Electrical Characteristics (TC=25°C), unless otherwise specified
-
Item
Symbol
Test conditions
Min.
900
2,5
Typ.
3,0
Max.
Unit
V
ID=1mA
VGS=0V
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
V
(BR)DSS
ID=1mA
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
V
3,5
500
1,0
V
GS(th)
VDS=900V
I
10
0,2
10
µA
mA
nA
W
S
DSS
V
GS=0V
VGS=±30V
ID=4,5A
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
I
100
1,4
GSS
VGS=10V
VDS=25V
R
1,1
10
DS(on)
ID=4,5A
g
5
fs
VDS=25V
C
2200
210
65
3300
320
100
40
pF
pF
pF
ns
ns
ns
ns
A
iss
VGS=0V
f=1MHz
VCC=600V
ID=9A
Output Capacitance
C
oss
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
C
rss
t
25
d(on)
t
60
90
r
Turn-Off-Time toff (ton=td(off)+tf)
VGS=10V
RGS=10 W
t
140
70
210
110
d(off)
t
f
Tch=25°C
Avalanche Capability
I
L = 100µH
9
AV
Continous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On-Voltage
Reverse Recovery Time
I
9
36
A
DR
I
A
DRM
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
V
1,2
450
4
1,8
V
SD
t
ns
µC
rr
-dIF/dt=100A/µs Tch=25°C
Reverse Recovery Charge
Q
rr
-
Thermal Characteristics
Item
Symbol
Test conditions
channel to air
Min.
Typ.
Max.
35
Unit
Thermal Resistance
R
°C/W
th(ch-a)
R
channel to case
0,833 °C/W
th(ch-c)
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
N-channel MOS-FET
2SK2082-01
900V
1,4W
9A
150W
FAP-IIA Series
> Characteristics
Typical Output Characteristics
Drain-Source-On-State Resistance vs. Tch
Typical Transfer Characteristics
•
•
•
VDS [V] ®
Tch [°C] ®
VGS [V] ®
Typical Drain-Source-On-State-Resistance vs. ID
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
•
•
•
ID [A] ®
ID [A] ®
Tch [°C] ®
Typical Capacitance vs. VDS
Typical Input Charge
Forward Characteristics of Reverse Diode
•
•
•
•
VDS [V] ®
Qg [nC] ®
VSD [V] ®
Allowable Power Dissipation vs. TC
Safe operation area
•
Transient Thermal impedance
•
•
Tc [°C] ®
VDS [V] ®
t [s] ®
This specification is subject to change without notice!
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