2SK2018 [FUJI]
N-channel MOS-FET; N沟道MOS - FET的
| 型号： | 2SK2018 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-channel MOS-FET |
| 文件： | 总2页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-channel MOS-FET
2SK2018-01L,S
FAP-III Series
60V
0,1W 10A
20W
> Features
> Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
- Avalanche Proof
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
V
Drain-Source-Voltage
V
60
60
10
40
DS
V
V
Drain-Gate-Voltage(RGS=20KW)
Continous Drain Current
Pulsed Drain Current
DGR
I
A
D
I
A
D(puls)
Gate-Source-Voltage
V
±20
20
V
GS
Max. Power Dissipation
Operating and Storage Temperature Range
P
W
°C
°C
D
T
150
ch
T
-55 ~ +150
stg
Electrical Characteristics (TC=25°C), unless otherwise specified
-
Item
Symbol
Test conditions
Min.
60
1,0
Typ.
1,5
Max.
Unit
V
ID=1mA
ID=1mA
VDS=60V
VGS=0V
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
V
(BR)DSS
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
V
2,5
500
1,0
V
GS(th)
I
10
0,2
10
µA
mA
nA
W
W
S
DSS
V
GS=0V
VGS=±20V
ID=5A
Gate Source Leakage Current
I
100
0,16
0,1
GSS
VGS=4V
Drain Source On-State Resistance
R
0,11
0,07
8
DS(on)
ID=5A
VGS=10V
VDS=25V
ID=5A
Forward Transconductance
Input Capacitance
g
4
fs
VDS=25V
C
500
200
80
750
300
120
15
pF
pF
pF
ns
ns
ns
ns
A
iss
VGS=0V
f=1MHz
VCC=30V
ID=5A
Output Capacitance
C
oss
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
C
rss
t
10
d(on)
t
20
30
r
Turn-Off-Time toff (ton=td(off)+tf)
VGS=10V
RGS=25W
t
100
50
150
75
d(off)
t
f
Tch=25°C
Avalanche Capability
I
L=100µH
10
AV
Continous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On-Voltage
Reverse Recovery Time
I
10
40
A
DR
I
A
DRM
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
V
1,2
100
V
SD
t
ns
µC
rr
-dIF/dt=100A/µs Tch=25°C
Reverse Recovery Charge
Q
0,15
rr
-
Thermal Characteristics
Item
Symbol
Test conditions
channel to air
Min.
Typ.
Max.
Unit
Thermal Resistance
R
°C/W
th(ch-a)
R
channel to case
6,25 °C/W
th(ch-c)
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
N-channel MOS-FET
2SK2018-01L,S
60V
0,1W 10A
20W
FAP-III Series
> Characteristics
Typical Output Characteristics
Drain-Source-On-State Resistance vs. Tch
Typical Transfer Characteristics
•
•
•
VDS [V] ®
Tch [°C] ®
VGS [V] ®
Typical Drain-Source-On-State-Resistance vs. ID
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
•
•
•
ID [A] ®
ID [A] ®
Tch [°C] ®
Typical Capacitance vs. VDS
Typical Input Charge
Forward Characteristics of Reverse Diode
•
•
•
•
VDS [V] ®
Qg [nC] ®
VSD [V] ®
Allowable Power Dissipation vs. TC
Safe operation area
•
Transient Thermal impedance
•
•
Tc [°C] ®
VDS [V] ®
t [s] ®
This specification is subject to change without notice!
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