2SK1817-M [FUJI]
N-channel MOS-FET; N沟道MOS - FET的
| 型号： | 2SK1817-M |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-channel MOS-FET |
| 文件： | 总2页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-channel MOS-FET
2SK1817-M
F-III Series
100V 0,08W 20A
40W
> Features
> Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
100
Unit
V
Drain-Source-Voltage
V
DS
Continous Drain Current
Pulsed Drain Current
I
20
A
D
I
80
20
A
D(puls)
Continous Reverse Drain Current
Gate-Source-Voltage
I
A
DR
V
±20
V
GS
Max. Power Dissipation
Operating and Storage Temperature Range
P
40
W
°C
°C
D
T
150
ch
T
-55 ~ +150
stg
Electrical Characteristics (TC=25°C), unless otherwise specified
-
Item
Symbol
Test conditions
Min.
100
1,0
Typ.
1,5
Max.
Unit
V
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
V
ID=1mA
ID=1mA
VDS=100V
VGS=0V
VGS=±20V
ID=10A
VGS=0V
(BR)DSS
V
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
2,5
500
1,0
V
GS(th)
I
10
0,2
10
µA
mA
nA
W
DSS
Gate Source Leakage Current
I
100
GSS
Drain Source On-State Resistance
R
VGS=4V
0,070 0,120
0,053 0,080
20
DS(on)
ID=10A
VGS=10V
VDS=25V
W
Forward Transconductance
Input Capacitance
g
ID=10A
10
S
fs
C
VDS=25V
1850
400
120
5
2780
600
180
8
pF
pF
pF
ns
ns
ns
ns
V
iss
Output Capacitance
C
VGS=0V
f=1MHz
VCC=30V
ID=20A
oss
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
C
rss
t
d(on)
t
50
75
r
Turn-Off-Time toff (ton=td(off)+tf)
t
VGS=10V
RGS=25W
350
100
1,22
70
530
150
1,83
d(off)
t
f
Diode Forward On-Voltage
Reverse Recovery Time
V
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
SD
t
ns
rr
-dIF/dt=100A/µs Tch=25°C
-
Thermal Characteristics
Item
Symbol
Test conditions
channel to air
Min.
Typ.
Max.
62,5
Unit
Thermal Resistance
R
°C/W
th(ch-a)
R
channel to case
3,125 °C/W
th(ch-c)
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
N-channel MOS-FET
100V 0,08W 20A
40W
F-III Series
> Characteristics
Typical Output Characteristics
Drain-Source-On-State Resistance vs. Tch
Typical Transfer Characteristics
•
•
•
VDS [V] ®
Tch [°C] ®
VGS [V] ®
Typical Drain-Source-On-State-Resistance vs. ID
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
•
•
•
ID [A] ®
ID [A] ®
Tch [°C] ®
Typical Capacitance vs. VDS
Typical Input Charge
Forward Characteristics of Reverse Diode
•
•
•
•
VDS [V] ®
Qg [nC] ®
VSD [V] ®
Allowable Power Dissipation vs. TC
Safe operation area
•
Transient Thermal impedance
•
•
Tc [°C] ®
VDS [V] ®
t [s] ®
This specification is subject to change without notice!
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