FTK640F [FS]
18A, 200V, 0.155Ω , N-CHANNEL POWER MOS FET;型号: | FTK640F |
厂家: | First Silicon Co., Ltd |
描述: | 18A, 200V, 0.155Ω , N-CHANNEL POWER MOS FET |
文件: | 总7页 (文件大小:433K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTK640D/DD/P/F
TECHNICAL DATA
18A, 200V, 0.155Ω , N-CHANNEL POWER MOS FET
P :
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET
is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
1
TO-220
F :
1
FEATURES
TO-220F
* 18A, 200V, Low RDS(ON) (0.155Ω)
* Single Pulse Avalanche Energy Rated
* Rugged - SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
DD :
1
TO-263
D :
SYMBOL
1
TO - 252
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Order Number
Package
Packing
1
2
3
FTK640P
FTK640F
FTK640DD
FTK640D
TO-220
TO-220F
TO-263
TO-252
G
D
S
Tube
Tube
G
G
D
D
S
S
S
G
D
Note: Pin Assignment:
G: Gate
D: Drain S: Source
2014. 3. 10
Revision No : 0
1/7
FTK640D/DD/P/F
ABSOLUTE MAXIMUM RATINGS
(TC = 25˚C, unless otherwise specified)
PARAMET
SYMBOL
VDS
RATINGS
200
UNIT
V
Drain-Source Voltage
(
TJ = 25˚C ~ 125˚C)
Drain to Gate Voltage (RGS = 20kΩ, TJ = 25˚C ~ 125˚C)
VDGR
IGS
ID
200
V
Gate to Source Voltage
±20
V
Continuous
A
18
11
Drain Current
TA = 100°C
Pulsed
ID
A
IDM
72
A
Maximum Power Dissipation (Tc = 25°C)
Derating factor
125 / 40
1.0 / 0.32
W
PD
(FTK640P / FTK640F)
W/˚C
Single Pulse Avalanche Energy Rating
EAS
580
mJ
(VDD = 50V, starting TJ = 25˚C, L = 3.3mH, RG =25Ω, IAS = 19.4A)
Operating Temperature Range
˚C
˚C
TJ
-40 ~ +150
-40 ~ +150
TSTG
Storage Temperature Range
Note: 1. Signified recommend operating range that indicates conditions for which the device is intended to be
functional, but does not guarantee specific performance limits.
2. Absolute maximum ratings indicate limits beyond which damage to the device may occur.
ELECTRICAL SPECIFICATIONS
(TC = 25˚C , unless Otherwise specified.)
PARAMETER
SYMBOL
BVDSS
TEST CONDITIONS
MIN TYP
MAX UNIT
V
ID = 250µA, VGS = 0V (Figure 16)
Drain-Source Breakdown Voltage
Gate to Threshold Voltage
200
2.0
18
VGS(THR)
ID(ON)
VGS = VDS, ID = 250µA
4.0
V
A
VDS > ID(ON) X RDS(ON)MAX, VGS = 10V
On-State Drain Current (Note 1)
VDS = Rated BVDSS, VGS = 0V
1
10
µA
IDSS
Zero Gate Voltage Drain Current
VDS =0.8xRated BVDSS,VGS=0V, TJ=125˚C
µA
IGSS
VGS = ±20V
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 1)
±100
nA
RDS(ON)
ID = 9.0A, VGS = 10V
0.125 0.15
10
Ω
Forward Transconductance
(Note 1)
VDS >
10V
gFS
6.7
S
ID = 11A
tDLY(ON)
tR
tDLY(OFF)
tF
Turn-On Delay Time
Rise Time
50
ns
ns
20
VDD = 100V, ID ≈ 19.4A,
RGS = 25Ω,
390
120
170
40
190
Turn-Off Delay Time
Fall Time
ns
55
ns
80
31
QG(TOT)
QGS
VGS = 10V, ID = 19.4A,
Total Gate Charge
nC
nC
nC
pF
pF
pF
VDS = 0.8 X Rated BVDSS
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
8.6
QGD
13.5
CISS
1220
1600
290
40
VDS = 25V, VGS = 0V,f = 1.0MHz
COSS
CRSS
Output Capacitance
Reverse - Transfer Capacitance
220
30
Note: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
2014. 3. 10
Revision No : 0
2/7
FTK640D/DD/P/F
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
θJA
Thermal Resistance Junction-Ambient (FTK640P)
Thermal Resistance Junction-Case (FTK640P)
62
˚C / W
θJc
1.0
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
VSD
TEST CONDITIONS
SD = 11A,
MIN
TYP
MAX UNIT
I
VGS = 0V
Source to Drain Diode Voltage (Note 1)
1.3
V
ISD
ISDM
tRR
Continuous Source to Drain Current
Pulse Source to Drain Current
Reverse Recovery Time
Note 2
18
72
A
A
Note 2
ISD = 19.4A,
140
ns
µC
QRR
dlSD/dt =100 A/µs
Reverse Recovery Charge
0.69
Note:
1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
Typical Performance Curves Unless Otherwise Specified
1.2
20
1.0
16
12
0.8
0.6
0.4
0.2
0
8
4
0
25
50
75
100
o
T , CASE TEMPERATURE ( C)
C
125
150
0
50
100
150
o
T
, CASE TEMPERATURE ( C)
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
1
0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
t
1
2
0.01
SINGLE PULSE
NOTES
DUTY FACTOR D = t /t
1
2
+ T
PEAK T = P
x Z
J
DM
θJC
C
0.001
-5
-4
10
-3
10
-2
10
-1
10
10
, RECTANGULAR PULSE DURATION (s)
1
10
t
P
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
2011. 3. 10
Revision No : 0
3/7
FTK640D/DD/P/F
MOSFET
1000
100
30
OPERATION IN THIS AREA MAY BE
LIMITED BY r
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
DS(ON)
10V
8V
o
= 25 C
T
C
24
18
12
7V
10µs
100µs
1ms
10
6V
10ms
DC
6
0
o
= 25 C
= MAX RATED
T
T
C
J
5V
4V
SINGLE PULSE
1
0
12
24
36
48
60
1
10
100
1000
V
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
DS
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
100
10
1
30
24
18
12
6
V
= 8V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
GS
DUTY CYCLE = 0.5% MAX
V
= 10V
GS
V
≥50V
DS
V
= 7V
GS
o
25 C
V
= 6V
= 5V
GS
o
150 C
V
GS
V
= 4V
GS
0
0.1
0
2.0
3.0
4.0
5.0
1.0
0
2
4
6
8
10
V
, DRAIN TO SOURCE VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
DS
GS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
1.5
1.2
3.0
2.4
1.8
1.2
0.6
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 10V, I = 18A
GS
D
0.9
0.6
V
= 10V
GS
0.3
0
V
= 20V
GS
0
15
45
, DRAIN CURRENT (A)
60
75
-60 -40 -20
0
20
40 60 80 100 120 140 160
o
30
I
T , JUNCTION TEMPERATURE ( C)
J
D
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2014. 3. 10
Revision No : 0
4/7
FTK640D/DD/P/F
1.25
1.15
1.05
0.95
0.85
0.75
3000
V
= 0V, f = 1MHz
I
= 250µA
GS
C
C
C
= C
+ C
D
ISS
GS
= C
GD
RSS
OSS
GD
≈C
+ C
DS
GD
2400
1800
1200
600
C
ISS
C
OSS
RSS
C
0
10
, DRAIN TO SOURCE VOLTAGE (V)
-60 -40 -20
0
20 40 60 80 100 120 140 160
o
100
1
T , JUNCTION TEMPERATURE ( C)
J
V
DS
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
1000
PULSE DURATION = 80µs
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
12
o
150 C
o
25 C
100
9
o
150 C
6
o
25 C
10
1
3
0
0
6
12
18
24
30
0
0.4
0.8
1.2
1.6
2.0
I
, DRAIN CURRENT (A)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
D
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I
= 28A
D
V
= 40V
DS
16
12
8
V
= 100V
DS
V
= 160V
DS
4
0
0
15
30
45
60
75
Q , GATE CHARGE (nC)
g
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
2014. 3. 10
Revision No : 0
5/7
FTK640D/DD/P/F
TEST CIRCUITS AND WAVEFORMS
VDS
L
VARY tp TO OBTAIN
REQUIRED PEAK IAS
+
-
RG
VDD
VGS
DUT
tp
0V
IAS
0.01
FIGURE 1. UNCLAMPED ENERGY TEST CIRCUIT
BVDSS
tp
VDS
IAS
VDD
0
tAV
FIGURE 2. UNCLAMPED ENERGY WAVEFORMS
RL
+
-
RG
VDD
DUT
VGS
FIGURE 3. SWITCHING TIME TEST CIRCUIT
2014. 3. 10
Revision No : 0
6/7
FTK640D/DD/P/F
TEST CIRCUITS AND WAVEFORMS(cont.)
tON
tOFF
tDLY(ON)
tDLY(OFF)
tR
tF
VDS
90%
90%
10%
10%
0
90%
VGS
10%
50%
50%
PULSE WIDTH
0
FIGURE 4. RESISTIVE SWITCHING WAVEFORMS
VDS (ISOLATED
SUPPLY)
CURRENT
REGULATOR
SAME TYPE
AS DUT
12V
BATTERY
0.2μF
50K
0.3μF
D
DUT
G
IG (REF)
S
0
VDS
IG CURRENT
SAMPLING
RESISTOR
ID CURRENT
SAMPLING
RESISTOR
FIGURE 5. GATE CHARGE TEST CIRCUIT
VDD
Q
G
(TOT)
VGS
Q
GD
Q
GS
VDS
0
0
IG(REF)
FIGURE 6. GATE CHARGE WAVEFORMS
2014. 3. 10
Revision No : 0
7/7
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