FTD1664Q [FS]
TRANSISTOR (NPN);
| 型号： | FTD1664Q |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总2页 (文件大小：345K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTD1664
TECHNICAL DATA
TRANSISTOR (NPN)
A
H
FEATURES
Low VCE(sat)
C
G
Compliments FTB1132
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
D
D
K
F
F
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
40
Unit
V
DIM MILLIMETERS
A
B
C
D
E
F
4.70 MAX
_
+
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1
2
3
32
V
_
+
1.50 0.10
5
V
G
H
J
0.40 TYP
1.7 MAX
1. BASE
2. COLLECTOR
3. EMITTER
Collector Current -Continuous
Collector power dissipation
Junction Temperature
1
A
0.7 MIN
K
0.5+0.15/-0.10
PC
500
150
-55~150
mW
TJ
℃
Tstg
Storage Temperature
℃
SOT-89
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
40
32
5
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=50μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=50μA, IC =0
V
V
V
ICBO
IEBO
hFE
VCB=20V, IE=0
0.5
0.5
390
0.4
μA
μA
Emitter cut-off current
VEB=4V, IC=0
DC current gain
VCE=3V, IC=100mA
IC=0.5A, IB=50mA
VCE=5V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
82
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
150
15
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
P
Q
R
82-180
120-270
DAQ
180-390
Range
Marking
DAP
DAR
2015. 08. 11
Revision No : 0
1/1
FTD1664
Typical Characteristics
hFE —— IC
Static Characteristic
150
300
COMMON
EMITTER
Ta=100℃
0 80mA
125
Ta=25℃
0.72mA
0.64mA
100
200
100
0
0.56mA
Ta=25℃
0.48mA
0.40mA
75
50
25
0
0.32mA
0.24mA
0.16mA
COMMON EMITTER
VCE= 3V
IB=0 08mA
6
0
2
4
8
1E-3
0.01
0.1
1
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCEsat —— IC
VBEsat —— IC
1.2
0.8
0.4
0.0
1000
100
10
β=10
β=10
Ta=25℃
Ta=100℃
Ta=100℃
Ta=25℃
1E-3
0.01
0.1
1
1E-3
0.01
0.1
1
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
Cob / Cib ——
fT ——
VCB / VEB
IC
1000
100
10
500
f=1MHz
IE=0 / IC=0
300
Ta=25℃
Cib
100
Cob
30
10
VCE=5V
Ta=25℃
1
0.1
20
3
10
100
1
10
REVERSE VOLTAGE
V
(V)
COLLECTOR CURRENT IC (mA)
PC —— Ta
600
500
400
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
2015. 08. 11
Revision No : 0
1/2
相关型号：
©2020 ICPDF网 联系我们和版权申明