FTC4374 [FS]
Complementary to FTA1662;
| 型号： | FTC4374 |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | Complementary to FTA1662 |
| 文件： | 总1页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTC4374
TECHNICAL DATA
FEATURES
Complementary to FTA1662
A
H
C
G
MAXIMUM RATINGS (TA=25 unless otherwise noted)
D
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
80
Units
V
D
K
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
F
F
DIM MILLIMETERS
80
V
A
B
C
D
E
F
4.70 MAX
_
+
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
5
V
1
2
3
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
0.4
A
_
+
1.50 0.10
G
H
J
0.40 TYP
1.7 MAX
1. BASE
PC
0.5
W
℃
℃
2. COLLECTOR
3. EMITTER
0.7 MIN
TJ
150
-55-150
K
0.5+0.15/-0.10
Tstg
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
80
80
5
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-1mA,IE=0
V(BR)CEO IC=-10mA,IB=0
V(BR)EBO IE=-1mA,IC=0
V
V
V
ICBO
IEBO
VCB=-80V,IE=0
VEB=-5V,IC=0
0.1
μA
μA
Emitter cut-off current
0.1
hFE(1)
hFE(2)
VCE=-2V,IC=-50mA
VCE=-2V,IC=-200mA
70
40
240
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
fT
IC=-200mA,IB=-20mA
VCE=-2V,IC=-5mA
0.4
0.8
V
V
0.55
Transition frequency
VCE=-10V,IC=-10mA
VCB=-10V,IE=0,f=1MHz
100
10
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
O
Y
Rank
70-140
EO
120-240
Range
Marking
EY
2011. 08. 11
Revision No : 0
1/1
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