FTC4081-R [FS]
General Purpose Transistors NPN Silicon;
| 型号： | FTC4081-R |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | General Purpose Transistors NPN Silicon |
| 文件： | 总6页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTC4081
TECHNICAL DATA
General Purpose Transistors
NPN Silicon
FEATURE
Low Cob,Cob=2pF(Typ.).
Epitaxial planar type.
PNP complement : FTA1576
3
1
DEVICE MARKING AND ORDERING INFORMATION
2
SC-70 / SOT– 323
Device
Marking
BQ
Shipping
FTC4081-Q
3000/Tape&Reel
BQ
BR
BR
BS
BS
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
FTC4081-Q
FTC4081-R
3
COLLECTOR
1
FTC4081-R
FTC4081-S
FTC4081-S
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
VCEO
VCBO
VEBO
IC
Value
50
Unit
V
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector power dissipation
Junction temperature
60
V
7.0
V
150
0.2
mAdc
W
PC
Tj
150
C
Storage temperature
T
stg
-
55
~
+150
C
h FE
values are classified as follows:
Q
R
S
*
hFE
120~270
180~390
270~560
2008. 4. 20
Revision No : 0
1/5
FTC4081
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted.)
Characteris tic
Symbol
V (BR)CEO
Min
50
Typ
—
Max
—
Unit
V
Collector–Emitter Breakdown Voltage
(IC = 1 mA)
Emitter–Base Breakdown Voltage
(IE = 50 µA)
V (BR)EBO
V (BR)CBO
I CBO
7
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage
(IC = 50 µA)
60
—
—
V
Collector Cutoff Current
(VCB = 60 V)
0.1
0.1
µA
µA
Emitter cutoff current
I EBO
(VEB = 7 V)
Collector-emitter saturation voltage
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio
(V CE = 6 V, I C= 1mA)
Transition frequency
V CE(sat)
—
—
––
0.4
V
h
120
560
––
FE
f T
—
—
180
2.0
––
MHz
pF
(V CE = 12 V, I E= – 2mA, f =30MHz )
Output capacitance
C
3.5
ob
(V CB = 12 V, I E= 0A, f =1MHz )
2008. 4. 20
Revision No : 0
2/5
FTC4081
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
0.50mA
50
100
80
60
40
20
0
VCE= 6 V
TA = 25°C
20
10
50
2
1
0.5
0.2
0.1
0
0.4
0.8
1.2
1.6
2.0
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
V BE , BASE TO EMITTER VOLTAGE(V)
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
10
8
500
200
100
50
6
4
2
20
10
0
0
4
8
12
16
20
0.2
0.5
1
2
5
10
20
50
100
200
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
I C, COLLECTOR CURRENT (mA)
Fig.6 Collector-emitter saturation voltage vs.
collector current
Fig.5 DC current gain vs. collector current ( )
0.5
500
0.2
200
100
50
0.1
0.05
0.02
0.01
20
10
0.2
0.5
1
2
5
10
20
50
100
200
0.2
0.5
1
2
5
10
20
50
100
200
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
2008. 4. 20
Revision No : 0
3/5
FTC4081
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
0.5
0.2
0.5
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.02
0.01
0.2
0.5
1
2
5
10
20
50
100
200
0.2
0.5
1
2
5
10
20
50
100
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
Fig.9 Gain bandwidth product vs. emitter current
Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
500
10
5
200
100
50
2
1
–0.5
–1
–2
–5
–10
–20
–50
–100
0.2
0.5
1
2
5
10
20
50
I E, EMITTER CURRENT (mA)
V CB, COLLECTOR TO BASE VOLTAGE (V)
EB, EMITTER TO BASE VOLTAGE (V)
V
Fig.11 Base-collector time constant vs.emitter current
200
100
50
20
10
–0.2
–0.5
–1
–2
–5
–10
I E, EMITTER CURRENT (mA)
2008. 4. 20
Revision No : 0
4/5
FTC4081
SC 70 / SOT 323
NOTES:
1. DIMENSION
ING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN MAX MIN MAX
MILLIMETERS
A
DIM
L
A
B
C
D
G
H
0.071 0.087
0.045 0.053
0.032 0.040
0.012 0.016
0.047 0.055
0.000 0.004
0.004 0.010
0.017 REF
0.026 BSC
1.80
1.15
0.80
0.30
1.20
0.00
0.10
0.425 REF
0.650 BSC
0.700 REF
2.00
2.20
1.35
1.00
0.40
1.40
0.10
3
B
S
1
2
D
J
0.25
G
K
L
N
S
0.028 REF
0.079 0.095
J
N
C
2.40
0 05 (0 002)
K
H
0 025
0 65
0 025
0 65
0 075
1 9
0 035
0 9
0 028
0 7
inches
mm
2008. 4. 20
Revision No : 0
5/5
FTC4081
EMBOSSED TAPE AND REEL DATA
FOR DISCRETES
T Max
Outside Dimension
Measured at Edge
13.0mm ± 0.5mm
(.512 ±.002’’)
1.5mm Min
(.06’’)
A
50mm Min
(1.969’’)
20.2mm Min
(.795’’)
Full Radius
G
Inside Dimension
Measured Near Hub
Size
A Max
G
T Max
8.4mm+1.5mm, -0.0
(.33’’+.059’’, -0.00)
14.4mm
(.56’’)
330mm
8 mm
(12.992’’)
Reel Dimensions
Metric Dimensions Govern –– English are in parentheses for reference only
Storage Conditions
Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred)
Humidity: 30 to 80 RH (40 to 60 is preferred )
Recommended Period: One year after manufacturing
(This recommended period is for the soldering condition only. The
characteristics and reliabilities of the products are not restricted to
this limitation)
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