FDS3004 [FS]
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE;
| 型号： | FDS3004 |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE 高压 开关 |
| 文件： | 总3页 (文件大小：391K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FDS3004
TECHNICAL DATA
HIGH VOLTAGE SURFACE MOUNT
SWITCHING DIODE
2
FEATURE
Fast Switching Speed
1
High Conductance
High Reverse Breakdown Voltage Rating
We declare that the material of product
compliance with RoHS requirements.
SOD-123
Equivalent Circuit Diagram
Ordering Information(Pb-free)
1
2
Device
Marking
34W
Shipping
Cathode
Anode
FDS3004T1G
FDS3004T3G
3000/Tape&Reel
10000/Tape&Reel
34W
°C
Maximum Ratings @ TA=25 unless otherwise specified
Characteristic
Symbol
VRRM
VR(RMS)
IF
Value
Unit
V
Repetitive Peak Reverse Voltage
350
240
200
RMS Reverse Voltage
V
Forward Continuous Current(Note 2)
mA
Non-Repetitive Peak Forward Surge Current @t=1.0µs
@t=1.0s
4.0
1.0
IFSM
A
Power Dissipation(Note 2)
Pd
410
mW
°C
/W
Thermal Resistance Junction to Ambient Air(Note 2)
Operating and Storage Temperature Range
R0JA
500
Tj, TSTG
-65 to +150
°C
Electrical Characteristics @ TA=25°C unless otherwise specified, per element
Characteristic
Symbol Min
Typ
MAX
Unit
Test Condition
Reverse Breakdown Voltage(Note 1)
V(BR)R 350
V
IR=150µA
0.78
0.93
1.03
30
0.87
1.0
IF=20mA
IF=100mA
IF=200mA
Forward Voltage(Note 1)
VF
V
1.25
100
100
5.0
nA VR=240V
Reverse Current(Note 1)
Total Capacitance
IR
35
µA VR=240V, Tj=150
°C
CT
Trr
1.0
Pf
VR=0V, f=1.0MHZ
IF=IR=30mA
Irr=3.0mA, RL=100Ω
Reverse Recovery Time
50
ns
Notes: 1. Short duration test pulse used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout.
2010. 7. 12
Revision No : 0
1/3
FDS3004
1000
100
10
1000
100
10
TJ =150°C
T = 150°C
J
TJ = 75°C
TJ = 75°C
TJ = 25°C
TJ = 25°C
1
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4
0
100
200
300
Forward Voltage, VF (V)
Reverse Voltage, VR (V)
Fig. 1. Typical Forward
Fig. 2. Typical Reverse
2
1.8
1.6
1.4
1 2
f=1MHz
1
0.8
0.6
0.4
0 2
0.1
1
10
100
Reverse Voltage, VR (V)
Fig. 3. Typical Capacitance
2010. 7. 12
Revision No : 0
2/3
FDS3004
SOD−123
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
A
A1
2. CONTROLLING DIMENSION: INCH.
1
MILLIMETERS
INCHES
NOM MAX
0.0370.046 0.053
0.0000.002 0.004
0.0200.024 0.028
DIM MIN
NOM
1.17
0.05
0.61
MAX MIN
A
A1
b
0.94
0.00
0.51
1.35
0.10
0.71
−−− −−−
−−−
−−−
0.006
c
D
E
0.15
E
H
E
1.40
2.54
3.56
1.60
2.69
3.68
−−−
1.80 0.055 0.063 0.071
2.84
3.86
−−−
0.010
0.1000.106 0.112
H
E
0.140 0.145 0.152
−−−
−−−
L
0.25
STYLE 1:
PIN 1. CATHODE
2. ANODE
L
2
C
b
SOLDERING FOOTPRINT*
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
mm
inches
SCALE 10:1
2010. 7. 12
Revision No : 0
3/3
相关型号：
FDS3170N7_NL
Power Field-Effect Transistor, 6.7A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, FLMP, SO-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明