FDS16S [FS]
Switching Diode;
| 型号： | FDS16S |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | Switching Diode |
| 文件： | 总3页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FDS16S
TECHNICAL DATA
Switching Diode
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Package
Shipping
FDS16ST1G
A6
SOT-23
3000/Tape&Reel
3
FDS16ST3G
A6
SOT-23
10000/Tape&Reel
2
1
MAXIMUM RATINGS
Rating
SOT –23
Symbol
Value
Unit
Continuous Reverse Voltage
Peak Forward Current
V R
I F
75
Vdc
3
1
CATHODE
ANODE
200
500
mAdc
mAdc
Peak Forward Surge Current
I FM(surge)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
mW
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
2.4
417
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
TJ , Tstg
–55 to +150
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V R = 75Vdc)
Symbol
Min
Max
Unit
I R
µAdc
—
—
—
1.0
50
30
(V R = 75 Vdc, T J = 150°C)
(V R = 25 Vdc, T J = 150°C)
Reverse Breakdown Voltage
(I BR = 100 µAdc)
V (BR)
V F
75
—
Vdc
mV
Forward Voltage
(I F = 1.0 mAdc)
—
—
—
—
715
855
(I F = 10 mAdc)
(I F = 50 mAdc)
1000
1250
(I F = 150 mAdc)
Diode Capacitance
C D
V FR
t rr
—
–-
—
—
2.0
1.75
6.0
pF
Vdc
ns
(V R = 0, f = 1.0 MHz)
Forward Recovery Voltage
(I F = 10 mAdc, t r = 20ns )
Reverse Recovery Time
(I F = I R = 10 mAdc, R L = 50 Ω)
Stored Charge
Q S
45
pC
(I F = 10 mAdc to V R= 5.0Vdc, R L = 500 Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2009. 5. 28
Revision No : 0
1/3
FDS16S
2.0 k
100 µH
0.1 µF
820 Ω
+10 V
I F
t p
t r
t
0.1µF
I F
t rr
t
10%
90%
D.U.T.
i R(REC) = 1.0 mA
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
I R
OUTPUT PULSE
INPUT SIGNAL
V R
(I F = I R = 10 mA; MEASURED
at i R(REC) = 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10 mA.
2. Input pulse is adjusted so I R(peak) is equal to 10 mA.
3. t p » t rr
Figure 1. Recovery Time Equivalent Test Circuit
100
10
10
T
T
A = 150°C
A = 125°C
T A= 85°C
1.0
0.1
TA= – 40°C
T
A = 85°C
1.0
0.1
T A = 55°C
T A= 25°C
0.01
0 001
T A = 25°C
20
0.2
0.4
0.6
0.8
1.0
1.2
0
10
30
40
50
V F , FORWARD VOLTAGE (VOLTS)
V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
2009. 5. 28
Revision No : 0
2/3
FDS16S
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3
S
B
1
2
V
G
C
H
J
D
K
P N 1. ANODE
2. NO CONECTION
3. CATHODE
0.037
0.95
0.037
0 95
0.079
2.0
0.035
0.9
0 031
0.8
inches
mm
2009. 5. 28
Revision No : 0
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