FDR140T3G [FS]
Surface Mount Schottky Power Rectifier;
| 型号： | FDR140T3G |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | Surface Mount Schottky Power Rectifier |
| 文件： | 总4页 (文件大小：277K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FDR140
TECHNICAL DATA
Plastic SOD–123 Package
Features
•
Small power mold type.
Low I .
•
•
•
R
High reliability.
We declare that the material of product
compliance with RoHS requirements.
Construction
Silicon epitaxial planar
SOD–123
•
Mechanical Characteristics
2
1
• Device Marking: S7
Anode
Cathode
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
ORDERING INFORMATION
Device
Package
Shipping
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
3000/Tape & Reel
SOD−123
FDR140T1G
FDR140T3G
SOD−123
10,000/Tape & Reel
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Limits
Symbol
VRM
VR
Unit
V
40
40
V
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
1
5.5
Io
IFSM
Tj
A
A
150
-40 to +150
℃
℃
Storage temperature
Tstg
(*1)Mounted on epoxy board. 180°Half sine wave
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Conditions
IF=1.0A
VR=40V
Symbol
Min.
Typ.
0.54
4.0
Max.
0.56
30
Unit
V
VF
IR
-
-
µA
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FDR140
Electrical characteristic curves(Ta=25 C)
1000
1000
100
10
10000
Ta=75℃
Ta=125℃
Ta=150℃
f=1MHz
Ta=150℃
Ta=125℃
1000
100
10
100
10
1
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=25℃
Ta=-25℃
1
0.1
0.01
1
0
100
200
300
400
500
600
0
5
10
15
20
25
30
0
5
10 15 20 25 30 35 40
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
480
470
460
450
440
430
300
290
280
270
260
250
240
230
220
210
200
30
25
20
15
10
5
Ta=25℃
VF=1A
n=30pcs
Ta=25℃
VR=40V
n=30pcs
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:279.7pF
AVE:454.3mV
AVE:4.08uA
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
200
150
100
50
30
25
20
15
10
5
100
80
60
40
20
0
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1cyc
Ifsm
8.3ms
Ifsm
AVE:83.0A
AVE:10.4ns
8.3ms 8.3ms
1cyc
0
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
trr DISPERSION MAP
IFSM DISRESION MAP
Mounted on epoxy board
1000
100
10
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
200
150
100
50
IM=10mA
IF=0.5A
Rth(j-a)
Ifsm
D=1/2
1ms
time
300us
t
DC
Rth(j-c)
Sin(θ＝180)
1
0
0.1
0.001
0
0.5 1
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
1.5
2
0.1
1
10
100
0.01
0.1
1
TIME:t(s)
Rth-t CHARACTERISTICS
10
100
1000
TIME:t(ms)
IFSM-t CHARACTERISTICS
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FDR140
3
2.5
2
0.05
0.04
0.03
0.02
0.01
0
3
2.5
2
Io
0A
Io
0A
0V
0V
t
VR
VR
t
D=t/T
VR=20V
D=t/T
VR=20V
Tj=150℃
DC
DC
T
T
Tj=150℃
1.5
1
1.5
1
DC
D=1/2
D=1/2
D=1/2
Sin(θ＝180)
0.5
0
0.5
0
Sin(θ＝180)
Sin(θ＝180)
0
10
REVERSE VOLTAGE:VR(V)
VR-P
20
30
40
0
25
50
75
100
125
150
0
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
R CHARACTERISTICS
30
25
20
15
10
5
No break at 30kV
AVE:7.30kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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FDR140
PACKAGE DIMENSIONS
SOD–123
A
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
H
1
INCHES
MILLIMETERS
DIM
A
B
C
D
E
H
J
K
MIN
MAX
0.071
0.112
0.053
0.028
–––
0.004
0.006
0.152
MIN
1.40
2.55
0.95
0.50
0.25
0.00
–––
MAX
1.80
2.85
1.35
0.70
–––
0.10
0.15
3.85
0.055
0.100
0.037
0.020
0.004
0.000
–––
K
B
0.140
3.55
E
2
STYLE 1:
PIN 1. CATHODE
2. ANODE
J
D
RECOMMENDED FOOTPRINT FOR SOD–123
0.91
0.036
1 22
0.048
2.36
0.093
4.19
0.165
mm
inches
SOD–123
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Revision No : 0
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