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MRF8S9260HR3 [FREESCALE]

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs; 射频功率场效应晶体管N沟道增强模式横向的MOSFET
MRF8S9260HR3
型号： MRF8S9260HR3
厂家： Freescale    Freescale
描述：

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
射频功率场效应晶体管N沟道增强模式横向的MOSFET

晶体 晶体管 功率场效应晶体管 射频 CD 放大器 局域网
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Document Number: MRF8S9260H  
Rev. 0, 12/2009  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
MRF8S9260HR3  
MRF8S9260HSR3  
Designed for CDMA and multicarrier GSM base station applications with  
frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all  
typical cellular base station modulation formats.  
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts,  
920-960 MHz, 75 W AVG., 28 V  
SINGLE W-CDMA  
I
DQ = 1700 mA, Pout = 75 Watts Avg., IQ Magnitude Clipping, Channel  
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability  
on CCDF.  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
G
h
Output PAR  
(dB)  
ACPR  
(dBc)  
ps  
D
Frequency  
920 MHz  
940 MHz  
960 MHz  
(dB)  
18.8  
18.7  
18.6  
(%)  
36.0  
37.0  
38.5  
6.3  
6.2  
5.9  
-39.5  
-38.6  
-37.1  
• Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW  
Output Power (3 dB Input Overdrive from Rated Pout), Designed for  
Enhanced Ruggedness  
CASE 465B-03, STYLE 1  
NI-880  
MRF8S9260HR3  
• Typical Pout @ 1 dB Compression Point ] 260 Watts CW  
Features  
• 100% PAR Tested for Guaranteed Output Power Capability  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
and Common Source S-Parameters  
• Internally Matched for Ease of Use  
• Integrated ESD Protection  
• Greater Negative Gate- Source Voltage Range for Improved Class C Operation  
• Optimized for Doherty Applications  
• RoHS Compliant  
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
CASE 465C-02, STYLE 1  
NI-880S  
MRF8S9260HSR3  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
-0.5, +70  
-6.0, +10  
32, +0  
Unit  
Vdc  
Vdc  
Vdc  
°C  
Drain-Source Voltage  
Gate-Source Voltage  
Operating Voltage  
V
DSS  
V
GS  
DD  
V
Storage Temperature Range  
Case Operating Temperature  
T
stg  
-65 to +150  
150  
T
°C  
C
(1,2)  
Operating Junction Temperature  
T
225  
°C  
J
CW Operation @ T = 25°C  
Derate above 25°C  
CW  
280  
1.5  
W
W/°C  
C
Table 2. Thermal Characteristics  
Characteristic  
(2,3)  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
Case Temperature 80°C, 75 W CW, 28 Vdc, I = 1800 mA  
Case Temperature 80°C, 265 W CW, 28 Vdc, I = 1100 mA  
DQ  
R
θ
JC  
°C/W  
0.37  
0.31  
DQ  
ꢀꢁ1. Continuous use at maximum temperature will affect MTTF.  
ꢁꢀ2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
ꢁꢀ3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1955.  
© Freescale Semiconductor, Inc., 2009. All rights reserved.  
Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
Human Body Model (per JESD22-A114)  
Machine Model (per EIA/JESD22-A115)  
Charge Device Model (per JESD22-C101)  
1C (Minimum)  
A (Minimum)  
IV (Minimum)  
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Off Characteristics  
Zero Gate Voltage Drain Leakage Current  
(V = 70 Vdc, V = 0 Vdc)  
I
—
—
—
—
—
—
10  
1
μAdc  
μAdc  
μAdc  
DSS  
DS  
GS  
Zero Gate Voltage Drain Leakage Current  
(V = 28 Vdc, V = 0 Vdc)  
I
DSS  
DS  
GS  
Gate-Source Leakage Current  
(V = 5 Vdc, V = 0 Vdc)  
I
1
GSS  
GS  
DS  
On Characteristics  
Gate Threshold Voltage  
(V = 10 Vdc, I = 400 μAdc)  
V
1.5  
2.4  
0.1  
2.3  
3.1  
0.2  
3
Vdc  
Vdc  
Vdc  
GS(th)  
DS  
D
Gate Quiescent Voltage  
(V = 28 Vdc, I = 1700 mAdc, Measured in Functional Test)  
V
3.9  
0.3  
GS(Q)  
DS(on)  
DD  
D
Drain-Source On-Voltage  
(V = 10 Vdc, I = 4.4 Adc)  
V
GS  
D
(1)  
Functional Tests  
(In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1700 mA, P = 75 W Avg., f = 960 MHz,  
DD DQ out  
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in  
3.84 MHz Channel Bandwidth @ 5 MHz Offset.  
Power Gain  
G
17.5  
36.0  
5.5  
—
18.6  
38.5  
5.9  
20.0  
—
dB  
%
ps  
Drain Efficiency  
η
D
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF  
Adjacent Channel Power Ratio  
Input Return Loss  
PAR  
ACPR  
IRL  
—
dB  
dBc  
dB  
-37.1  
-14  
-35.0  
-9  
—
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1700 mA, P = 75 W Avg.,  
out  
DD  
DQ  
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz  
Channel Bandwidth @ 5 MHz Offset.  
G
η
Output PAR  
(dB)  
ACPR  
(dB)  
IRL  
(dB)  
ps  
D
Frequency  
(dB)  
18.8  
18.7  
18.6  
(%)  
36.0  
37.0  
38.5  
920 MHz  
6.3  
6.2  
5.9  
-39.5  
-38.6  
-37.1  
-16  
-18  
-14  
940 MHz  
960 MHz  
ꢀꢁ1. Part internally matched both on input and output.  
(continued)  
MRF8S9260HR3 MRF8S9260HSR3  
RF Device Data  
Freescale Semiconductor  
2
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Typical Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1700 mA, 920-960 MHz Bandwidth  
DD DQ  
P
out  
@ 1 dB Compression Point, CW  
P1dB  
—
260  
—
W
IMD Symmetry @ 130 W PEP, P where IMD Third Order  
out  
IMD  
MHz  
sym  
—
10  
—
Intermodulation ` 30 dBc  
(Delta IMD Third Order Intermodulation between Upper and Lower  
Sidebands > 2 dB)  
VBW Resonance Point  
(IMD Third Order Intermodulation Inflection Point)  
VBW  
—
50  
—
MHz  
res  
Gain Flatness in 40 MHz Bandwidth @ P = 75 W Avg.  
out  
G
—
—
0.2  
—
—
dB  
F
Gain Variation over Temperature  
(-30 °C to +85°C)  
ΔG  
0.024  
dB/°C  
Output Power Variation over Temperature  
(-30 °C to +85°C)  
ΔP1dB  
—
0.0075  
—
dBm/°C  
MRF8S9260HR3 MRF8S9260HSR3  
RF Device Data  
Freescale Semiconductor  
3
C21  
R2  
C7  
C6  
C9  
C8  
C19 C20  
C10  
C5 R1  
C18 C17  
C16*  
C1 C2  
C3  
C4  
C11  
C13  
C12  
C14  
C15  
MRF8S9260H  
Rev. 1  
*C16 is mounted vertically.  
Figure 1. MRF8S9260HR3(HSR3) Test Circuit Component Layout  
Table 5. MRF8S9260HR3(HSR3) Test Circuit Component Designations and Values  
Part  
Description  
36 pF Chip Capacitors  
Part Number  
ATC100B360JT500XT  
ATC100B0R4BT500XT  
ATC100B4R7BT500XT  
ATC100B8R2BT500XT  
C4532X5R1H475MT  
C5750X5R1H106MT  
ATC100B5R6BT500XT  
477KXM063M  
Manufacturer  
ATC  
C1, C6, C9, C12, C16  
C2  
0.4 pF Chip Capacitor  
ATC  
C3  
4.7 pF Chip Capacitor  
ATC  
C4, C5  
8.2 pF Chip Capacitors  
4.7 μF, 50 V Chip Capacitor  
10 μF, 50 V Chip Capacitors  
5.6 pF Chip Capacitors  
470 μF, 63 V Electrolytic Capacitors  
4.3 pF Chip Capacitor  
ATC  
C7  
TDK  
C8, C13, C14, C19, C20  
TDK  
C10, C11  
C15, C21  
C17  
ATC  
Illinois Capacitor  
ATC  
ATC100B4R3BT500XT  
ATC100B0R8BT500XT  
CRCW120610R0JKEA  
CRCW12060000Z0EA  
RF-35  
C18  
0.8 pF Chip Capacitor  
ATC  
R1  
10 Ω, 1/4 W Chip Resistor  
0 Ω, 3.5 A Chip Resistor  
Vishay  
Vishay  
Taconic  
R2  
PCB  
0.030″, ε = 3.5  
r
MRF8S9260HR3 MRF8S9260HSR3  
RF Device Data  
Freescale Semiconductor  
4
TYPICAL CHARACTERISTICS  
21  
42  
V
= 28 Vdc, P = 75 W (Avg.)  
DD out  
= 1700 mA, Single-Carrier W-CDMA  
40  
20.5  
20  
I
DQ  
38  
19.5  
19  
36  
3.84 MHz Channel Bandwidth, Input Signal  
PAR = 7.5 dB @ 0.01% Probability on CCDF  
34  
η
D
-9  
0
18.5  
18  
-33  
-35  
-37  
-39  
G
ps  
-11  
-13  
-0.5  
-1  
ACPR  
17.5  
-15  
-17  
-19  
-1.5  
-2  
17  
16.5  
16  
-41  
-43  
PARC  
960 970  
IRL  
940  
-2.5  
900  
910  
920  
930  
950  
980  
f, FREQUENCY (MHz)  
Figure 2. Output Peak-to-Average Ratio Compression (PARC)  
Broadband Performance @ Pout = 75 Watts Avg.  
-1 0  
V
= 28 Vdc, P = 250 W (PEP), I = 1700 mA  
out DQ  
Two-Tone Measurements  
DD  
-2 0  
-3 0  
(f1 + f2)/2 = Center Frequency of 940 MHz  
IM3-U  
IM3-L  
IM5-U  
-4 0  
-5 0  
-60  
IM5-L  
IM7-U  
IM7-L  
10  
1
100  
TWO-T ONE SPACING (MHz)  
Figure 3. Intermodulation Distortion Products  
versus Two-Tone Spacing  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
21  
20  
19  
18  
60  
1
0
η
D
50  
-1 dB = 64 W  
ACPR  
-1  
-2  
40  
30  
20  
10  
0
G
ps  
-3 dB = 122 W  
-2 dB = 88 W  
17  
16  
15  
-3  
-4  
PARC  
V
DD  
= 28 Vdc, I = 1700 mA, f = 940 MHz  
DQ  
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth  
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF  
-5  
35  
60  
85  
110  
135  
160  
P , OUTPUT POWER (WATTS)  
out  
Figure 4. Output Peak-to-Average Ratio  
Compression (PARC) versus Output Power  
MRF8S9260HR3 MRF8S9260HSR3  
RF Device Data  
Freescale Semiconductor  
5
TYPICAL CHARACTERISTICS  
20  
19  
18  
60  
50  
40  
30  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
960 MHz  
940 MHz  
940 MHz  
G
920 MHz  
920 MHz  
ps  
960 MHz  
V
DD  
= 28 Vdc, I = 1700 mA  
DQ  
17 Single-Carrier W-CDMA, 3.84 MHz  
Channel Bandwidth, Input Signal  
PAR = 7.5 dB @ 0.01%  
16  
20  
10  
0
Probability on CCDF  
960 MHz  
940 MHz  
15  
η
D
ACPR  
920 MHz  
100  
14  
1
10  
, OUTPUT POWER (WATTS) AVG.  
300  
P
out  
Figure 5. Single-Carrier W-CDMA Power Gain, Drain  
Efficiency and ACPR versus Output Power  
24  
20  
16  
12  
0
Gain  
-3  
-6  
-9  
IRL  
-12  
8
4
0
V
= 28 Vdc  
P = 0 dBm  
DD  
-15  
-18  
in  
I
= 1700 mA  
DQ  
600  
700  
800  
900  
1000  
1100  
1200  
f, FREQUENCY (MHz)  
Figure 6. Broadband Frequency Response  
W-CDMA TEST SIGNAL  
100  
10  
10  
0
-10  
-20  
-30  
-40  
-50  
-60  
3.84 MHz  
Channel BW  
1
Input Signal  
0.1  
0.01  
W-CDMA. ACPR Measured in 3.84 MHz  
Channel Bandwidth @ 5 MHz Offset.  
Input Signal PAR = 7.5 dB @ 0.01%  
Probability on CCDF  
+ACPR in 3.84 MHz  
Integrated BW  
-ACPR in 3.84 MHz  
Integrated BW  
0.001  
-70  
-80  
0.0001  
0
1
2
3
4
5
6
7
8
9
10  
-90  
PEAK-T O-AVERAGE (dB)  
-100  
Figure 7. CCDF W-CDMA IQ Magnitude  
Clipping, Single-Carrier Test Signal  
-9 -7.2 -5.4 -3.6 -1.8  
0
1.8 3.6  
5.4 7.2  
9
f, FREQUENCY (MHz)  
Figure 8. Single-Carrier W-CDMA Spectrum  
MRF8S9260HR3 MRF8S9260HSR3  
RF Device Data  
Freescale Semiconductor  
6
V
DD  
= 28 Vdc, I = 1700 mA, P = 75 W Avg.  
DQ out  
f
Z
Z
load  
source  
W
MHz  
820  
840  
860  
880  
900  
920  
940  
960  
980  
W
2.25 - j2.59  
2.21 - j2.51  
2.16 - j2.46  
2.11 - j2.40  
1.98 - j2.37  
1.87 - j2.29  
1.75 - j2.23  
1.61 - j2.14  
1.46 - j2.03  
1.93 - j1.63  
1.91 - j1.45  
1.90 - j1.28  
1.90 - j1.14  
1.91 - j1.02  
1.90 - j0.91  
1.89 - j0.83  
1.87 - j0.76  
1.84 - j0.69  
Z
Z
=
=
Test circuit impedance as measured from  
gate to ground.  
source  
Test circuit impedance as measured from  
drain to ground.  
load  
Output  
Matching  
Network  
Device  
Under  
Test  
Input  
Matching  
Network  
Z
Z
source  
load  
Figure 9. Series Equivalent Source and Load Impedance  
MRF8S9260HR3 MRF8S9260HSR3  
RF Device Data  
Freescale Semiconductor  
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS  
V
DD  
= 28 Vdc, I = 1700 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle  
DQ  
61  
60  
59  
58  
57  
56  
55  
54  
53  
52  
51  
50  
Ideal  
920 MHz  
Actual  
960 MHz  
920 MHz  
940 MHz  
940 MHz  
960 MHz  
33 34 35 36 37 38 39 40 41 42 43 44  
P , INPUT POWER (dBm)  
in  
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V  
P1dB  
Watts  
P3dB  
Watts  
f
(MHz)  
dBm  
55.6  
55.6  
55.6  
dBm  
56.5  
56.2  
56.4  
920  
940  
960  
363  
363  
363  
447  
417  
437  
Test Impedances per Compression Level  
f
(MHz)  
Z
Z
load  
source  
Ω
Ω
920  
940  
960  
P1dB  
P1dB  
P1dB  
0.94 - j2.68  
1.18 - j2.65  
1.24 - j3.10  
2.19 - j2.10  
2.18 - j2.52  
2.72 - j2.11  
Figure 10. Pulsed CW Output Power  
versus Input Power @ 28 V  
MRF8S9260HR3 MRF8S9260HSR3  
RF Device Data  
Freescale Semiconductor  
8
PACKAGE DIMENSIONS  
MRF8S9260HR3 MRF8S9260HSR3  
RF Device Data  
Freescale Semiconductor  
9
MRF8S9260HR3 MRF8S9260HSR3  
RF Device Data  
Freescale Semiconductor  
10  
MRF8S9260HR3 MRF8S9260HSR3  
RF Device Data  
Freescale Semiconductor  
11  
MRF8S9260HR3 MRF8S9260HSR3  
RF Device Data  
Freescale Semiconductor  
12  
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE  
Refer to the following documents, tools and software to aid your design process.  
Application Notes  
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers  
Engineering Bulletins  
• EB212: Using Data Sheet Impedances for RF LDMOS Devices  
Software  
• Electromigration MTTF Calculator  
• RF High Power Model  
• .s2p File  
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the  
Software & Tools tab on the part's Product Summary page to download the respective tool.  
REVISION HISTORY  
The following table summarizes revisions to this document.  
Revision  
Date  
Description  
0
Dec. 2009  
• Initial Release of Data Sheet  
MRF8S9260HR3 MRF8S9260HSR3  
RF Device Data  
Freescale Semiconductor  
13  
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Document Number: MRF8S9260H  
Rev. 0, 12/2009  

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 RF POWER FIELD EFFECT TRANSISTOR ARRAY
MOTOROLA

MRF901

 NPN SILICON RF TRANSISTOR
ASI

MRF9011

 The Rf Line NPN Silicon High-Frequency Transistor
MOTOROLA

MRF9011L

 The Rf Line NPN Silicon High-Frequency Transistor
MOTOROLA

MRF9011LT1

 NPN Silicon High-Frequency Transistor
MOTOROLA

MRF9011LT3

 RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CASE 318A-05, 4 PIN
MOTOROLA

MRF9030

 RF POWER FIELD EFFECT TRANSISTORS
MOTOROLA

MRF9030

 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
FREESCALE

MRF9030D

 The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MOTOROLA
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