MRF6V14300HR3_10 [FREESCALE]
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs; 射频功率场效应晶体管N - 沟道增强 - 模式横向的MOSFET
| 型号： | MRF6V14300HR3_10 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| 文件： | 总10页 (文件大小：643K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6V14300H
Rev. 3, 4/2010
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V14300HR3
MRF6V14300HSR3
RF Power transistors designed for applications operating at frequencies
between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are
suitable for use in pulsed applications.
•
Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout =
330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec,
Duty Cycle = 12%
Power Gain — 18 dB
1400 MHz, 330 W, 50 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFETs
Drain Efficiency — 60.5%
•
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak
Power
Features
•
•
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
CASE 465--06, STYLE 1
NI--780
•
•
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6V14300HR3
CASE 465A--06, STYLE 1
NI--780S
MRF6V14300HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +100
--6.0, +10
-- 65 to +150
150
Unit
Vdc
Vdc
°C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
°C
(1,2)
T
J
225
°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 65°C, 330 W Pulsed, 300 μsec Pulse Width, 12% Duty Cycle
Z
θ
0.13
°C/W
JC
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
I
—
100
—
—
—
—
—
10
—
μAdc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 100 mA)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
50
2.5
μAdc
mA
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
(V = 90 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 662 μAdc)
V
V
0.9
1.5
—
1.6
2.4
2.4
3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 150 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.63 Adc)
V
0.26
—
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
0.6
350
330
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 330 W Peak (39.6 W Avg.), f = 1400 MHz,
DD
DQ
out
Pulsed, 300 μsec Pulse Width, 12% Duty Cycle
Power Gain
G
16.5
18
19.5
—
dB
%
ps
D
(2)
(2)
Drain Efficiency
η
59
60.5
Input Return Loss
IRL
—
-- 1 2
-- 9
dB
Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 330 W Peak
DD
DQ
out
(39.6 W Avg.), f1 = 1200 MHz, f2 = 1300 MHz and f3 = 1400 MHz, Pulsed, 300 μsec Pulse Width, 12% Duty Cycle, t = 50 ns
r
Relative Insertion Phase
Gain Flatness
|∆Φ|
—
—
—
—
—
10
0.5
0.3
-- 2 0
-- 6 5
—
—
—
—
—
°
G
dB
F
Pulse Amplitude Droop
Harmonic 2nd and 3rd
Spurious Response
D
rp
dB
H2 & H3
dBc
dBc
Load Mismatch Stability
(VSWR = 3:1 at all Phase Angles)
VSWR--S
VSWR--T
All Spurs Below --60 dBc
Load Mismatch Tolerance
No Degradation in Output Power
(VSWR = 5:1 at all Phase Angles)
1. Part internally matched both on input and output.
100 × Pout
VDD × Ipeak
2. Drain efficiency is calculated by:
where: I
= (I
-- I ) / Duty Cycle (%) + I
DQ
.
DQ
peak
AVG
ηD
=
MRF6V14300HR3 MRF6V14300HSR3
RF Device Data
Freescale Semiconductor
2
V
SUPPLY
+
+
C3
C5
C6
C7
C4
R1
V
BIAS
Z23
+
RF
OUTPUT
C9 C8
Z22
Z13
Z14 Z15 Z16 Z17 Z18 Z19 Z20
Z21
RF
INPUT
C2
Z1
Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11
Z12
C1
DUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.205″ x 0.080″ Microstrip
0.721″ x 0.022″ Microstrip
0.080″ x 0.104″ Microstrip
0.128″ x 0.022″ Microstrip
0.062″ x 0.134″ Microstrip
0.440″ x 0.022″ Microstrip
0.262″ x 0.496″ Microstrip
0.030″ x 0.138″ Microstrip
0.256″ x 0.028″ Microstrip
0.058″ x 0.254″ Microstrip
0.344″ x 0.087″ Microstrip
0.110″ x 0.087″ Microstrip
Z13
0.110″ x 0.866″ Microstrip
0.630″ x 0.866″ Microstrip
0.307″ x 0.470″ Microstrip
0.045″ x 0.221″ Microstrip
0.171″ x 0.136″ Microstrip
0.120″ x 0.430″ Microstrip
0.964″ x 0.136″ Microstrip
0.177″ x 0.078″ Microstrip
0.215″ x 0.078″ Microstrip
1.577″ x 0.070″ Microstrip
1.459″ x 0.070″ Microstrip
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
PCB
Z9
Z10
Z11
Z12
Arlon CuClad 250GX--0300--55--22, 0.030″, ε = 2.55
r
Figure 1. MRF6V14300HR3(HSR3) Test Circuit Schematic
Table 5. MRF6V14300HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
ATC100B430JT500XT
ATC100B180JT500XT
ATC100B330JT500XT
ATC100B270JT500XT
2225X7R225KT3AB
Manufacturer
ATC
C1
C2
C3
C4
C5
C6
C7
C8
C9
R1
43 pF Chip Capacitor
18 pF Chip Capacitor
ATC
33 pF Chip Capacitor
ATC
27 pF Chip Capacitor
ATC
2.2 μF, 100 V Chip Capacitor
470 μF, 63 V Electrolytic Capacitor
330 pF, 63 V Electrolytic Capacitor
0.1 μF, 35 V Chip Capacitor
10 μF, 35 V Tantalum Capacitor
10 Ω, 1/4 W Chip Resistor
ATC
EMVY630GTR471MMH0S
EMVY630GTR331MMH0S
CDR33BX104AKYS
Multicomp
Multicomp
Kemet
Kemet
Vishay
T491D106K035AT
CRCW120610R0FKEA
MRF6V14300HR3 MRF6V14300HSR3
RF Device Data
Freescale Semiconductor
3
C9
C3
C4
C6
C5
R1
C8
C7
C2
C1
MRF6V14300
Rev. 1
Figure 2. MRF6V14300HR3(HSR3) Test Circuit Component Layout
MRF6V14300HR3 MRF6V14300HSR3
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
1000
100
160
140
120
C
oss
C
iss
100
80
Measured with ±30 mV(rms)ac @ 1 MHz
= 0 Vdc
P
= 300 W
out
V
GS
10
1
P
= 270 W
out
P
= 330 W
60
out
C
rss
40
V
= 50 Vdc, I = 150 mA
DQ
DD
20
0
f = 1200 MHz, Pulse Width = 300 μsec
0.1
0
10
V
20
30
40
50
0
2
4
6
8
10
12
14
16
18
20
, DRAIN--SOURCE VOLTAGE (VOLTS)
DUTY CYCLE (%)
DS
Figure 3. Capacitance versus Drain--Source Voltage
Figure 4. Safe Operating Area
24
65
59
58
57
56
55
54
53
52
Ideal
P3dB = 55.30 dBm (339 W)
P1dB = 54.77 dBm (300 W)
22
20
55
45
35
25
Actual
G
ps
η
D
51
50
49
48
47
18
16
V
= 50 Vdc, I = 150 mA, f = 1400 MHz
DQ
Pulse Width = 300 μsec, Duty Cycle = 12%
V
= 50 Vdc, I = 150 mA, f = 1400 MHz
DQ
Pulse Width = 300 μsec, Duty Cycle = 12%
DD
DD
50
100
400
27
29
31
33
35
37
39
P
, OUTPUT POWER (WATTS) PULSED
P , INPUT POWER (dBm) PULSED
in
out
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 6. Pulsed Output Power versus
Input Power
22
21
20
19
18
17
22
I
= 150 mA, f = 1400 MHz
DQ
Pulse Width = 300 μsec
21
20
19
18
17
16
15
I
= 600 mA
DQ
Duty Cycle = 12%
300 mA
150 mA
450 mA
45 V
50 V
40 V
35 V
V
= 50 Vdc, f = 1400 MHz
DD
Pulse Width = 300 μsec, Duty Cycle = 12%
V
= 30 V
DD
50
100
400
50
100
, OUTPUT POWER (WATTS) PULSED
400
P
, OUTPUT POWER (WATTS) PULSED
P
out
out
Figure 8. Pulsed Power Gain versus
Output Power
Figure 7. Pulsed Power Gain versus
Output Power
MRF6V14300HR3 MRF6V14300HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
400
300
200
100
0
24
70
58
-- 3 0 _C
T
= --30_C
C
25_C
55_C
25_C
22
85_C
G
ps
85_C
T
= --30_C
C
25_C
85_C
20
18
16
46
34
η
D
55_C
V
= 50 Vdc, I = 150 mA, f = 1400 MHz
DQ
DD
V
= 50 Vdc, I = 150 mA, f = 1400 MHz
DQ
Pulse Width = 300 μsec, Duty Cycle = 12%
DD
Pulse Width = 300 μsec, Duty Cycle = 12%
22
0
1
2
3
4
5
6
50
100
400
P , INPUT POWER (WATTS) PULSED
in
P
, OUTPUT POWER (WATTS) PULSED
out
Figure 9. Pulsed Output Power versus
Input Power
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
19
63
18
17
16
15
14
13
12
11
G
62
61
60
59
0
ps
η
D
-- 5
IRL
-- 1 0
-- 1 5
V
= 50 Vdc, I = 150 mA, P = 330 W Peak (39.6 W Avg.)
DQ out
DD
-- 2 0
-- 2 5
10
9
Pulse Width = 300 μsec, Duty Cycle = 12%
1200 1225 1250 1275 1300 1325
1350 1375 1400
f, FREQUENCY (MHz)
Figure 11. Broadband Performance @ Pout = 330 Watts Peak
8
10
7
10
6
10
5
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 330 W Peak, Pulse Width = 300 μsec,
DD
out
Duty Cycle = 12%, and η = 60.5%.
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
MRF6V14300HR3 MRF6V14300HSR3
RF Device Data
Freescale Semiconductor
6
Z = 10 Ω
o
f = 1400 MHz
f = 1400 MHz
Z
load
Z
source
f = 1200 MHz
f = 1200 MHz
V
= 50 Vdc, I = 150 mA, P = 330 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
1200
1300
1400
2.70 -- j4.10
4.93 -- j2.66
7.01 -- j2.87
2.97 -- j2.66
2.85 -- j2.40
3.17 -- j1.78
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 13. Series Equivalent Source and Load Impedance
MRF6V14300HR3 MRF6V14300HSR3
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
B
G
2X
Q
1
2
M
M
M
bbb
T
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
3
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
K
B
(FLANGE)
D
INCHES
DIM MIN MAX
A
B
C
D
MILLIMETERS
M
M
M
bbb
T
A
B
MIN
33.91
9.65
MAX
34.16
9.91
1.335
0.380
0.125
0.495
0.035
0.003
1.345
0.390
0.170
0.505
0.045
0.006
3.18
4.32
(LID)
R
(INSULATOR)
M
N
12.57
0.89
0.08
12.83
1.14
0.15
E
M
M
M
M
M
M
M
M
bbb
T
A
B
ccc
aaa
T
T
A
A
B
F
G
1.100 BSC
27.94 BSC
(INSULATOR)
S
(LID)
H
K
M
N
0.057
0.170
0.774
0.772
.118
0.067
0.210
0.786
0.788
.138
1.45
4.32
19.66
19.60
3.00
1.70
5.33
19.96
20.00
3.51
M
M
M
M
B
ccc
T
A
B
H
Q
R
S
0.365
0.365
0.375
0.375
9.27
9.27
9.53
9.52
C
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
F
SEATING
PLANE
E
A
T
CASE 465--06
ISSUE G
STYLE 1:
PIN 1. DRAIN
A
(FLANGE)
2. GATE
3. SOURCE
NI--780
MRF6V14300HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
2X K
2
B
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
bbb
T
A
B
MIN
20.45
9.65
3.18
12.57
0.89
0.08
1.45
4.32
19.61
19.61
9.27
9.27
-- -- --
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.70
5.33
20.02
20.02
9.53
9.52
1 . 0 2
0 . 7 6
A
B
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
-- -- --
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
0 . 0 4 0
0 . 0 3 0
C
D
E
F
H
K
M
N
(LID)
N
(LID)
R
S
M
M
M
ccc
T
A
B
M
M
M
M
ccc
aaa
T
T
A
A
B
(INSULATOR)
(INSULATOR)
M
M
M
M
M
M
B
bbb
T
A
B
R
S
H
U
Z
-- -- --
-- -- --
C
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
3
F
SEATING
PLANE
E
A
STYLE 1:
T
PIN 1. DRAIN
A
2. GATE
5. SOURCE
(FLANGE)
CASE 465A--06
ISSUE H
NI--780S
MRF6V14300HSR3
MRF6V14300HR3 MRF6V14300HSR3
RF Device Data
Freescale Semiconductor
8
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Sept. 2008
Oct. 2008
•
•
Initial Release of Data Sheet
Added footnote to describe the formula used to calculate values for Min and Typ Drain Efficiency in the
Functional Test table, p. 2
•
•
Updated Fig. 4, Safe Operating Area, to show additional curves for 270 W and 300 W output power, p. 5
Added Fig. 12, MTTF versus Junction Temperature, p. 6
2
3
Nov. 2008
Apr. 2010
•
Changed “multiply by” symbol to “divide by” symbol in the Functional Test Drain Efficiency formula
footnote, p. 2
•
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
•
•
Reporting of pulsed thermal data now shown using the Z
symbol, p. 1
JC
θ
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 9
MRF6V14300HR3 MRF6V14300HSR3
RF Device Data
Freescale Semiconductor
9
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Document Number: MRF6V14300H
Rev. 3, 4/2010
相关型号：
MRF6V2010NBR5
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA, PLASTIC, ROHS COMPLIANT, CASE 1337-03, 2 PIN
NXP
MRF6V2010NR1
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA, ROHS COMPLIANT, PLASTIC, TO-270, CASE 1265-09, 2 PIN
ROCHESTER
MRF6V2010NR1_08
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
FREESCALE
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