MRF6S9160HR3_08_技术文档

Document Number: MRF6S9160H

Rev. 2, 8/2008

Freescale Semiconductor

Technical Data

MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device

Migration PCN12895 for more details.

RF Power Field Effect Transistors

MRF6S9160HR3

MRF6S9160HSR3

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for N-CDMA, GSM and GSM EDGE base station applications

with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier

applications.

• Typical Single-Carrier N-CDMA Performance @ 880 MHz: V_DD= 28 Volts,

I

_DQ= 1200 mA, P_out= 35 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

880 MHz, 35 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 20.9 dB

Drain Efficiency — 30.5%

ACPR @ 750 kHz Offset — -46.8 dBc in 30 kHz Bandwidth

GSM EDGE Application

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 1200 mA,

P

_out= 76 Watts Avg., Full Frequency Band (865-895 MHz)

Power Gain — 20 dB

Drain Efficiency — 45%

Spectral Regrowth @ 400 kHz Offset = -66 dBc

Spectral Regrowth @ 600 kHz Offset = -75 dBc

EVM — 2% rms

CASE 465-06, STYLE 1

NI-780

GSM Application

MRF6S9160HR3

• Typical GSM Performance: V_DD= 28 Volts, I_DQ= 1200 mA, P_out

160 Watts, Full Frequency Band (921-960 MHz)

Power Gain — 20 dB

=

Drain Efficiency — 58%

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 160 Watts CW

Output Power

Features

CASE 465A-06, STYLE 1

NI-780S

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

MRF6S9160HSR3

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +68

-0.5, +12

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

V

DSS

V

GS

T

stg

T

°C

C

(1,2)

Operating Junction Temperature

T

225

°C

J

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 81°C, 160 W CW

Case Temperature 73°C, 35 W CW

R

θ

JC

°C/W

0.31

0.33

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S9160HR3 MRF6S9160HSR3

RF Device Data

Freescale Semiconductor

1

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

Machine Model (per EIA/JESD22-A115)

Charge Device Model (per JESD22-C101)

1A (Minimum)

A (Minimum)

IV (Minimum)

Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

I

—

10

1

μAdc

DSS

GSS

(V = 68 Vdc, V = 0 Vdc)

DS

GS

Zero Gate Voltage Drain Leakage Current

(V = 28 Vdc, V = 0 Vdc)

DS

GS

Gate-Source Leakage Current

1

(V = 5 Vdc, V = 0 Vdc)

GS

DS

On Characteristics

Gate Threshold Voltage

(V = 10 Vdc, I = 525 μAdc)

V

1

2

3

4

Vdc

GS(th)

GS(Q)

DS(on)

DS

D

Gate Quiescent Voltage

(V = 28 Vdc, I = 1200 mAdc, Measured in Functional Test)

DD

D

Drain-Source On-Voltage

(V = 10 Vdc, I = 3.6 Adc)

V

0.1

0.2

0.3

GS

D

(1)

Dynamic Characteristics

Output Capacitance

(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

DS

C

—

80.2

2.2

—

pF

oss

GS

Reverse Transfer Capacitance

C

rss

(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

DS

GS

Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I

= 1200 mA, P = 35 W Avg. N-CDMA,

out

DD

DQ

f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz

Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF

Power Gain

G

20

29

—

20.9

30.5

-46.8

-17

23

—

dB

%

ps

Drain Efficiency

η

D

Adjacent Channel Power Ratio

Input Return Loss

ACPR

IRL

-45

-9

dBc

dB

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V = 28 Vdc, I = 1200 mA,

DD

DQ

P

= 76 W Avg., 865 MHz<Frequency<895 MHz

out

Power Gain

G

—

20

—

dB

%

ps

Drain Efficiency

η

—

45

2

D

Error Vector Magnitude

Spectral Regrowth at 400 kHz Offset

Spectral Regrowth at 600 kHz Offset

EVM

SR1

SR2

% rms

dBc

-66

-75

Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) V = 28 Vdc, I = 1200 mA, P = 160 W,

DD

DQ

out

921 MHz<Frequency<960 MHz

Power Gain

G

—

20

58

—

dB

%

ps

Drain Efficiency

η

D

Input Return Loss

IRL

-12

160

dB

W

P

@ 1 dB Compression Point, CW

P1dB

out

(f = 940 MHz)

1. Part is internally matched on input.

MRF6S9160HR3 MRF6S9160HSR3

RF Device Data

Freescale Semiconductor

2

B2

V

SUPPLY

B1

BIAS

R2

+

C21

C22

C24

C23

C20

R1

L2

C16 C17 C18

C19

RF

OUTPUT

C7

C8

C9

L1

Z9

Z10

Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18

Z19

RF

INPUT

C5

C6

C2

Z1

Z2

Z3 Z4

Z5

Z6 Z7

Z8

C10

C11 C12

C15

C13 C14

C1

DUT

C3

C4

Z1

Z2

Z3

Z4

Z5

Z6

Z7

Z8

Z9

Z10

0.426″ x 0.080″ Microstrip

0.813″ x 0.080″ Microstrip

0.471″ x 0.080″ Microstrip

0.319″ x 0.220″ Microstrip

0.171″ x 0.220″ Microstrip

0.200″ x 0.425″ x 0.630″ Taper

0.742″ x 0.630″ Microstrip

0.233″ x 0.630″ Microstrip

0.128″ x 0.630″ Microstrip

0.134″ x 0.630″ Microstrip

Z11

Z12

Z13

Z14

Z15

Z16

Z17

Z18

Z19

0.066″ x 0.630″ Microstrip

0.630″ x 0.425″ x 0.220″ Taper

0.120″ x 0.220″ Microstrip

0.292″ x 0.220″ Microstrip

0.023″ x 0.220″ Microstrip

0.030″ x 0.220″ Microstrip

0.846″ x 0.080″ Microstrip

0.440″ x 0.080″ Microstrip

0.434″ x 0.080″ Microstrip

PCB Arlon CuClad 250GX-0300-55-22, 0.030″, ε = 2.55

r

Figure 1. MRF6S9160HR3(SR3) Test Circuit Schematic

Table 5. MRF6S9160HR3(SR3) Test Circuit Component Designations and Values

Part

Description

Part Number

Manufacturer

Fair Rite

B1, B2

C1, C2, C19

C3, C11

C4

Ferrite Beads, Small

2743019447

47 pF Chip Capacitors

ATC100B470JT500XT

27291SL

ATC

0.8-8.0 pF Variable Capacitors, Gigatrim

2.7 pF Chip Capacitor

Johanson

ATC

ATC100B2R7JT500XT

ATC100B150JT500XT

ATC100B120JT500XT

ATC100B4R3JT500XT

ATC100B8R2JT500XT

ATC100B3R9JT500XT

27271SL

C5, C6

C7, C8

C9, C10

C12

15 pF Chip Capacitors

ATC

12 pF Chip Capacitors

ATC

4.3 pF Chip Capacitors

ATC

8.2 pF Chip Capacitor

ATC

C13, C14

C15

3.9 pF Chip Capacitors

ATC

0.6-4.5 pF Variable Capacitor, Gigatrim

22 pF Chip Capacitor

Johanson

ATC

C16

ATC100B220JT500XT

T491C105K0J0AT

C17

1 μF, 50 V Tantalum Capacitor

20K pF Chip Capacitor

Kemit

ATC

C18

CDR35BP203AKYS

ATC100B181JT500XT

GRM55DR61H106KA88B

EKME630ELL471MK25S

0603HC

C20

180 pF Chip Capacitor

C21, C22, C23

10 μF, 50 V Chip Capacitors

470 μF, 63 V Electrolytic Capacitor

10 nH Inductors

Murata

C24

L1, L2

R1

United Chemi-Con

Coilcraft

180 Ω, 1/4 W Chip Resistor

10 Ω, 1/4 W Chip Resistor

CRCW12061800FKEA

CRCW120610R0FKEA

Vishay

R2

Vishay

MRF6S9160HR3 MRF6S9160HSR3

RF Device Data

Freescale Semiconductor

3

C24

C16

B1

B2

900 MHz

Rev. 2

C18

C19

C22 C23

C21

C20

R2

C17

R1

L1

L2

C7 C9

C5

C6

C14

C1

C2

C15

C13

C4

C3

C12

C11

C8

C10

Figure 2. MRF6S9160HR3(SR3) Test Circuit Component Layout

MRF6S9160HR3 MRF6S9160HSR3

RF Device Data

Freescale Semiconductor

4

TYPICAL CHARACTERISTICS

20.9

32

30

28

26

24

η

D

20.6

20.3

20

G

ps

19.7

19.4

19.1

18.8

18.5

18.2

17.9

V

= 28 Vdc, P = 35 W (Avg.)

DD out

= 1200 mA, N−CDMA IS−95 (Pilot, Sync,

I

DQ

−40

−45

−50

−5

Paging, Traffic Codes 8 Through 13)

−8

−11

ACPR

ALT1

−55

−60

−65

−14

−17

IRL

−20

840

850

860

870

880

890

900

910

920

f, FREQUENCY (MHz)

Figure 3. Single-Carrier N-CDMA Broadband Performance

@ P_out= 35 Watts Avg.

20.3

44

η

20

19.7

19.4

19.1

18.8

18.5

18.2

17.9

17.6

17.3

D

42

40

38

36

G

ps

V

= 28 Vdc, P = 70 W (Avg.)

out

= 1200 mA, N−CDMA IS−95 (Pilot, Sync,

DD

I

DQ

−30

−36

−42

−3

−6

−9

Paging, Traffic Codes 8 Through 13)

ACPR

IRL

−48

−54

−60

−12

−15

ALT1

−18

840

850

860

870

880

890

900

910

920

f, FREQUENCY (MHz)

Figure 4. Single-Carrier N-CDMA Broadband Performance

@ P_out= 70 Watts Avg.

23

−10

V

= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz

Two−Tone Measurements, 100 kHz Tone Spacing

DD

22

21

20

19

18

17

I

= 1800 mA

−20

−30

−40

−50

1500 mA

DQ

I

= 600 mA

1200 mA

900 mA

DQ

900 mA

1500 mA

1800 mA

600 mA

1200 mA

−60

−70

V

= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz

Two−Tone Measurements, 100 kHz Tone Spacing

16

15

DD

1

10

100

400

1

10

P , OUTPUT POWER (WATTS) PEP

out

100

400

P

, OUTPUT POWER (WATTS) PEP

out

Figure 5. Two-Tone Power Gain versus

Output Power

Figure 6. Third Order Intermodulation Distortion

versus Output Power

MRF6S9160HR3 MRF6S9160HSR3

RF Device Data

Freescale Semiconductor

5

TYPICAL CHARACTERISTICS

−10

−20

−30

−40

−50

−60

−70

−80

0

V

= 28 Vdc, I = 1200 mA

DQ

V

= 28 Vdc, P = 70 W (Avg.)

out

= 1200 mA, Two−Tone Measurements

DD

f1 = 880 MHz, f2 = 880.1 MHz

Two−Tone Measurements

−10

−20

−30

−40

−50

−60

−70

I

DQ

(f1 + f2)/2 = Center Frequency of 880 MHz

3rd Order

5th Order

7th Order

5th Order

7th Order

1

10

100

400

0.1

1

10

100

P

, OUTPUT POWER (WATTS) PEP

out

TWO−TONE SPACING (MHz)

Figure 7. Intermodulation Distortion Products

versus Output Power

Figure 8. Intermodulation Distortion Products

versus Tone Spacing

Ideal

61

59

P6dB = 54.7 dBm (294.78 W)

P3dB = 53.98 dBm (249.98 W)

P1dB = 53.02 dBm (200.36 W)

57

55

53

51

49

47

Actual

V

= 28 Vdc, I = 1200 mA

DQ

DD

Pulsed CW, 8 μsec(on), 1 msec(off)

f = 880 MHz

26

28

30

32

34

36

38

40

P , INPUT POWER (dBm)

in

Figure 9. Pulsed CW Output Power versus

Input Power

60

−20

V

= 28 Vdc, I = 1200 mA

DQ

T = −30_C

DD

C

25_C

f = 880 MHz, N−CDMA IS−95

(Pilot, Sync, Paging, Traffic Codes

8 Through 13)

50

40

30

20

−30

−40

−50

−60

85_C

25_C

−30_C

85_C

ACPR

−30_C

G

ps

η

D

85_C

10

0

−70

−80

25_C

ALT1

1

10

100

300

P

, OUTPUT POWER (WATTS) AVG.

out

Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power Gain

and Drain Efficiency versus Output Power

MRF6S9160HR3 MRF6S9160HSR3

RF Device Data

Freescale Semiconductor

6

TYPICAL CHARACTERISTICS

23

21

20

19

18

17

16

70

60

−30_C

85_C

22

21

20

19

18

G

ps

T = −30_C

C

50

40

30

20

10

0

25_C

85_C

η

D

32 V

28 V

V

= 24 V

V

I

= 28 Vdc

= 1200 mA

DD

17

16

I = 1200 mA

DQ

f = 880 MHz

DQ

f = 880 MHz

0

50

100

150

200

250

300

1

10

, OUTPUT POWER (WATTS) CW

100

300

P

P , OUTPUT POWER (WATTS) CW

out

Figure 11. Power Gain and Drain Efficiency

versus CW Output Power

Figure 12. Power Gain versus Output Power

8

10

7

10

6

10

5

10

90

110

130

150

170

190

210

230

250

T , JUNCTION TEMPERATURE (°C)

J

This above graph displays calculated MTTF in hours when the device

is operated at V = 28 Vdc, P = 35 W Avg., and η = 30.5%.

DD

out

D

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Figure 13. MTTF versus Junction Temperature

MRF6S9160HR3 MRF6S9160HSR3

RF Device Data

Freescale Semiconductor

7

N-CDMA TEST SIGNAL

100

10

−10

−20

−30

1.2288 MHz

Channel BW

.

. .

..

. .

... .. . .

.. ..

.

.. . .. ..

.

. .

.

. .

. . . .

.

. .

.

1

.

−40

−50

−60

−70

−80

.

−ALT1 in 30 kHz

Integrated BW

+ALT1 in 30 kHz

Integrated BW

.

0.1

0.01

.

..

.

IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8

Through 13) 1.2288 MHz Channel Bandwidth

Carriers. ACPR Measured in 30 kHz Bandwidth @

750 kHz Offset. ALT1 Measured in 30 kHz

Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @

0.01% Probability on CCDF.

..

.

. .

.

. .

. ..

. . .

.

. .

.

..

.. ..

. . .

. .

... .

. .

.

. ..

.

..

.

...

.

..

.

..

. .

.

..

.

..

.

..

.

. .

..

.

..

.

..

.

..

.

..

.

...

..

.

..

.

. .

.

..

.

.. .

.

..

.

..

.

..

0.001

...

.

..

.. .

.

..

.

−ACPR in 30 kHz +ACPR in 30 kHz

Integrated BW Integrated BW

.

. .

.

..

.

. .

.

.....

. ..

.

. . .

..

. .

.

. ..

. .

. ..

.

. .

.. .

..

.

...

.

..

.

. .

.

..

....

.

..

−90 .

. .

.

0.0001

0

2

4

6

8

10

−100

PEAK−TO−AVERAGE (dB)

−110

−3.6 −2.9 −2.2 −1.5 −0.7

Figure 14. Single-Carrier CCDF N-CDMA

0

0.7 1.5

2.2 2.9 3.6

f, FREQUENCY (MHz)

Figure 15. Single-Carrier N-CDMA Spectrum

MRF6S9160HR3 MRF6S9160HSR3

RF Device Data

Freescale Semiconductor

8

f = 910 MHz

f = 850 MHz

Z

load

Z = 2 Ω

o

f = 910 MHz

Z

source

f = 850 MHz

V

= 28 Vdc, I = 1200 mA, P = 35 W Avg.

DQ out

DD

f

Z

load

source

MHz

Ω

850

865

880

895

910

0.61 - j1.27

0.66 - j1.15

0.64 - j1.05

0.55 - j0.90

0.48 - j0.74

1.20 + j0.03

1.26 + j0.15

1.31 + j0.22

1.32 + j0.28

1.26 + j0.32

Z

=

Test circuit impedance as measured from

gate to ground.

source

load

Test circuit impedance as measured

from drain to ground.

Output

Matching

Network

Device

Under

Test

Input

Matching

Network

Z

source

load

Figure 16. Series Equivalent Source and Load Impedance

MRF6S9160HR3 MRF6S9160HSR3

RF Device Data

Freescale Semiconductor

9

PACKAGE DIMENSIONS

B

G

2X

Q

1

M

B

bbb

T A

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M−1994.

3

2. CONTROLLING DIMENSION: INCH.

3. DELETED

4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.

K

B

2

(FLANGE)

D

INCHES

DIM MIN MAX

1.345 33.91

MILLIMETERS

M

bbb

T A

B

MIN

MAX

34.16

9.91

A

B

1.335

0.380

0.125

0.495

0.035

0.003

0.390

0.170

9.65

3.18

C

4.32

(LID)

R

(INSULATOR)

M

N

D

0.505 12.57

12.83

1.14

0.15

E

0.045

0.006

0.89

0.08

M

bbb

T A

B

ccc

T A

B

F

G

1.100 BSC

27.94 BSC

(INSULATOR)

S

(LID)

H

0.057

0.170

0.774

0.772

.118

0.067

0.210

0.786 19.66

0.788 19.60

.138

0.375

1.45

4.32

1.70

5.33

19.96

20.00

3.51

K

M

B

aaa

B

ccc

T A

M

H

N

Q

3.00

9.27

R

0.365

9.53

9.52

C

S

aaa

bbb

ccc

0.005 REF

0.010 REF

0.015 REF

0.127 REF

0.254 REF

0.381 REF

F

SEATING

PLANE

E

A

T

STYLE 1:

A

CASE 465-06

ISSUE G

PIN 1. DRAIN

2. GATE

3. SOURCE

(FLANGE)

NI-780

MRF6S9160HR3

4X U

(FLANGE)

4X Z

(LID)

B

1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M−1994.

2. CONTROLLING DIMENSION: INCH.

3. DELETED

4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.

2X K

2

B

(FLANGE)

D

INCHES

DIM MIN MAX

MILLIMETERS

M

bbb

T A

B

MIN

20.45

9.65

3.18

12.57

0.89

0.08

1.45

4.32

19.61

9.27

−−−

MAX

20.70

9.91

4.32

12.83

1.14

0.15

1.70

5.33

20.02

9.53

9.52

1.02

0.76

A

B

0.805

0.380

0.125

0.495

0.035

0.003

0.057

0.170

0.774

0.772

0.365

−−− 0.040

−−− 0.030

0.005 REF

0.010 REF

0.015 REF

0.815

0.390

0.170

0.505

0.045

0.006

0.067

0.210

0.786

0.788

0.375

(LID)

C

N

(LID)

R

D

M

ccc

T A

B

M

E

ccc

T A

B

F

(INSULATOR)

S

H

(INSULATOR)

M

K

M

B

aaa

B

bbb

T A

M

N

H

R

S

C

U

3

Z

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0.127 REF

0.254 REF

0.381 REF

SEATING

PLANE

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A

T

CASE 465A-06

ISSUE H

A

STYLE 1:

(FLANGE)

PIN 1. DRAIN

2. GATE

5. SOURCE

NI-780S

MRF6S9160HSR3

MRF6S9160HR3 MRF6S9160HSR3

RF Device Data

Freescale Semiconductor

10

PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family

Engineering Bulletins

• EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

2

Aug. 2008

•

Listed replacement part and Device Migration notification reference number, p. 1

Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality

is standard, p. 1

•

Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table), p. 1

Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related

“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1

•

Corrected V to V in the RF test condition voltage callout for V

, On Characteristics table, p. 2

GS(Q)

DS

DD

Removed Forward Transconductance from On Characteristics table as it no longer provided usable

information, p. 2

•

Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3

Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part

numbers, p. 3

•

Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider

dynamic range, p. 6

Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture

limitations, p. 7

2

Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps and listed

operating characteristics and location of MTTF calculator for device, p. 7

Added Product Documentation and Revision History, p. 11

MRF6S9160HR3 MRF6S9160HSR3

RF Device Data

Freescale Semiconductor

11

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MRF6S9160HR3 MRF6S9160HSR3

RF Device Data

Freescale Semiconductor

Document Number: MRF6S9160H

1^R2^{ev. 2, 8/2008}


型号：	MRF6S9160HR3_08
厂家：	Freescale
描述：	RF Power Field Effect Transistors 射频功率场效应晶体管晶体晶体管功率场效应晶体管射频
文件：	总12页 (文件大小：480K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MRF6S9160HR3_08 [FREESCALE]

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