MHW1345N [FREESCALE]
General Purpose Linear Amplifier Module; 通用线性放大器模块
| 型号： | MHW1345N |
| 厂家： | 
Freescale |
| 描述： | General Purpose Linear Amplifier Module |
| 文件： | 总4页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MHW1345N
Rev. 3, 5/2006
Freescale Semiconductor
Technical Data
General Purpose Linear
Amplifier Module
MHW1345N
Features
• 34.5 dB Typical Gain @ 100 MHz
• Silicon Bipolar Technology
• Class A Operation
10-200 MHz
34.5 dB
800 mW
• Typical ITO = +44 dBm @ 200 MHz
• Unconditionally Stable Under All Load Conditions
Applications
GENERAL PURPOSE
LINEAR AMPLIFIER MODULE
• Driver Amplifier in 50 Ohm Systems Requiring High Linearity
• Instrumentation Amplifiers
• Return Path Amplifier on CATV Systems Operating in the 10 to 200 MHz
Frequency Range
• Possible Replacement for CA2830C
Description
• 24 Vdc Supply, 10 to 200 MHz, General Purpose Linear Amplifier Module
• Replaced MHW1345. There are no form, fit or function changes with this
part replacement.
• RoHS Compliant
CASE 1302-01, STYLE 1
Table 1. Maximum Ratings
Rating
Symbol
Value
28
Unit
Vdc
dBm
°C
DC Supply Voltage
RF Power Input
V
CC
P
+5
in
C
Operating Case Temperature Range
Storage Temperature Range
T
- 20 to +100
- 40 to +100
T
stg
°C
Table 2. Electrical Characteristics (T = 25°C, V = 24 V, 50 Ω system unless otherwise noted)
C
CC
Characteristic
Symbol
Min
10
Typ
—
Max
200
1
Unit
MHz
dB
Frequency Range
BW
Gain Flatness (f = 10 - 200 MHz)
Power Gain (f = 100 MHz)
G
F
G
p
—
0.5
33.5
—
34.5
3.8
35.5
4.5
—
dB
Noise Figure, Broadband (f = 200 MHz)
NF
dB
Power Output — 1 dB Compression
(f = 10 - 200 MHz)
P
630
800
mW
1dB
Power Output — 1 dB Compression
P
1000
1260
—
mW
1dB
(f = 10 - 200 MHz, V = 28 V)
CC
Third Order Intercept (See Figure 2, f = 200 MHz)
ITO
43
—
—
44
—
dBm
—
1
Input/Output VSWR (f = 10 - 200 MHz)
VSWR
1.5:1
- 60
2:1
- 50
Second Harmonic Distortion
d
so
dB
(Tone at 100 mW, f = 150 MHz)
2H
Peak Envelope Power
(Two Tone Distortion Test — See Figure 2)
(f = 10 - 200 MHz @ - 32 dB IMD)
PEP
600
270
800
310
—
mW
mA
Supply Current
I
330
CC
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 3. S-Parameters (Biased at 24 Volts, T = 25°C Zo = 50Ω)
S11
S21
S12
S22
Frequency
(MHz)
Mag
-19.3
-15.6
-13.2
-11.1
Ang
45.5
35.0
34.4
30.1
Mag
34.6
34.2
33.9
33.5
Ang
-0.6
-56.7
-114
134
Mag
-47.0
-47.5
-47.9
-48.3
Ang
2.3
Mag
-14.5
-12.6
-10.8
-14.9
Ang
76.8
45.0
10.7
-42.6
10
50
-30.3
-62.9
-128
100
200
Magnitude in dB, Phase Angle in degrees.
P
O
P IN CO N FI GU R ATI O N
I MD
1
2
3
4
5
6
7
8
9
I
N
P
U
T
O UTP UT
f
1
f
2
2
f 2 − f 1
0. 01 μF
IM D
) ꢀ @ ꢀ IMD u 6 0 d B
I
T
O
+
P
V
C
C
O
2
P E P = 4 X P @ I M D = − 3 2 d B
O
Figure 1. External Connections
Figure 2. Intermodulation Test
MHW1345N
RF Device Data
Freescale Semiconductor
2
PACKAGE DIMENSIONS
A
S
B
A
Z
N O TE S :
1 . DIM EN SIONS ARE IN IN CH ES.
2 . INT E R P RE T D IME N S IONS A ND TOLE R A N CE S
P ER A S ME Y1 4. 5M , 1 99 4.
2X
Q
M
M
M
A
0 . 01 0
T
F
INCHES
DIM MIN MAX
MILLIMETERS
MIN MAX
V
J
A
B
C
D
E
F
− − −
− − −
1. 775
1. 085
0. 840
− − − 4 5. 08 5
− − − 2 7. 55 9
− − − 2 1. 33 6
F
F
R
− − −
0. 015
0. 465
0. 300
0. 021 0. 381
0. 510 11. 811 1 2. 95 4
0. 325 7. 62 8 .2 55
2 . 54 0 BS C
3 . 96 2 B SC
0. 355 8. 001 9 .0 17
0
.
5
3
3
G
J
0 . 10 0 B S C
0 . 15 6 B S C
0. 315
K
L
1 . 00 0 B S C
0 . 16 5 B S C
0 . 10 0 B S C
2 5 .4 0 0 BS C
4 . 19 1 B SC
2 . 54 0 B SC
2X 6−32UNC−2B
N
P
Q
R
S
U
V
W
X
Y
Z
L
M
M
0
.
0
1
0
Z
T
A
2X U
0. 148
− − −
0. 168 3. 759
0. 600 − − −
4 .2 67
1 5. 24
1 . 50 0 B S C
0 . 20 0 B S C
3 8 .1 0 0 B SC
5 . 08 0 B SC
E
−
−
−
0. 250
− − −
6 .3 50
1
2
3
5
7 8 9
0
.
4
3
5
− − − 11. 049
− − −
C
0 . 40 0 B S C
1
0
.
1
6
0
B
S
C
N
K
E
0. 152
0. 009
0. 163 3. 861
0. 011 0. 229
4 .1 40
0 .2 79
W
Z
X
4X
S
T
Y
L
E
1
:
P
7X
D
PI N 1 . R F IN PU T
2. G R O U N D
3. G R O U N D
4. D EL ET ED
5. V DC
G
T
X
M
M
0
.
0
2
0
T
A
X
2X
Y
M
M
0
.
0
1
0
Z
T
A
6. D EL ET ED
7. G R O U N D
8. G R O U N D
9
.
R
F
O
U
T
P
U
T
CASE 1302-01
ISSUE E
MHW1345N
RF Device Data
Freescale Semiconductor
3
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Document Number: MHW1345N
Rev. 3, 5/2006
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