C1206C104K1RAC-TU [FREESCALE]
RF Power LDMOS Transistors; RF功率LDMOS晶体管
| 型号： | C1206C104K1RAC-TU |
| 厂家： | 
Freescale |
| 描述： | RF Power LDMOS Transistors |
| 文件： | 总21页 (文件大小：980K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: AFT09MS031N
Rev. 0, 5/2012
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
AFT09MS031NR1
AFT09MS031GNR1
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
764 to 941 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
764--941 MHz, 31 W, 13.6 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Narrowband Performance (13.6 Vdc, I = 500 mA, T = 25°C, CW)
DQ
A
Frequency
(MHz)
G
η
P1dB
(W)
ps
D
(dB)
18.0
17.2
15.7
(%)
74.1
71.0
68.1
764
870
941
32
31
31
T O -- 2 7 0 -- 2
PLASTIC
800 MHz Broadband Performance (13.6 Vdc, I = 100 mA, T = 25°C, CW)
DQ
A
AFT09MS031NR1
Frequency
(MHz)
G
η
P1dB
(W)
ps
D
(dB)
15.7
15.7
15.5
(%)
62.0
63.0
61.0
760
820
870
44
37
36
T O -- 2 7 0 -- 2 G U L L
PLASTIC
AFT09MS031GNR1
Load Mismatch/Ruggedness
Frequency Signal
P
Test
out
(MHz)
Type
VSWR
(W)
Voltage
Result
870
CW
>65:1 at all
54
17
No Device
Phase Angles
(3 dB Overdrive)
Degradation
Features
•
•
•
•
•
•
•
•
•
•
Characterized for Operation from 764 to 941 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band (764–870 MHz)
225°C Capable Plastic Package
Exceptional Thermal Performance
High Linearity for: TETRA, SSB, LTE
Cost--effective Over--molded Plastic Packaging
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
Gate
Drain
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Typical Applications
•
•
Output Stage 800 MHz Trunking Band Mobile Radio
Output Stage 900 MHz Trunking Band Mobile Radio
© Freescale Semiconductor, Inc., 2012. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
°C
Drain--Source Voltage
V
--0.5, +40
--6.0, +12
17, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
--65 to +150
--40 to +150
--40 to +225
T
C
°C
(1,2)
T
J
°C
Total Device Dissipation @ T = 25°C
P
317
W
C
D
Derate above 25°C
1.59
W/°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
0.63
°C/W
JC
Case Temperature 81°C, 31 W CW, 13.6 Vdc, I = 500 mA, 870 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2, passes 2500 V
A, passes 100 V
IV, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
2
1
μAdc
μAdc
nAdc
DSS
DSS
GSS
(V = 40 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 13.6 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
600
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 115 μAdc)
V
1.6
—
2.1
0.1
7.8
2.6
—
Vdc
Vdc
S
GS(th)
DS
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.2 Adc)
V
DS(on)
GS
D
Forward Transconductance
(V = 10 Vdc, I = 10 Adc)
g
—
—
fs
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
C
—
—
—
2.1
63
—
—
—
pF
pF
pF
rss
(V = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Output Capacitance
(V = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
140
iss
(V = 13.6 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
(1)
Functional Tests
(In Freescale Narrowband Test Fixture, 50 ohm system) V = 13.6 Vdc, I = 500 mA, P = 31 W, f = 870 MHz
DD DQ out
Common--Source Amplifier Power Gain
Drain Efficiency
G
16.0
17.2
71.0
18.5
—
dB
%
ps
D
η
68.0
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, I = 500 mA)
DQ
Frequency
(MHz)
Signal
Type
P
out
(W)
VSWR
Test Voltage, V
Result
No Device Degradation
DD
870
CW
>65:1 at all Phase Angles
54
17
(3 dB Overdrive)
1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
300
100
9
C
iss
8
7
T = 25°C
A
V
= 4.0 Vdc
GS
6
5
4
3
2
1
C
oss
Measured with ±30 mV(rms)ac @ 1 MHz
= 0 Vdc
V
GS
10
1
3.5 Vdc
3.25 Vdc
C
rss
2.5 Vdc
12
3.0 Vdc
18
0
0
2
4
6
8
10
14
16
20
0
5
10
15
20
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
DS
Note: Measured with both sides of the transistor tied together.
Figure 2. Capacitance versus Drain--Source Voltage
Figure 3. Drain Current versus Drain--Source Voltage
9
10
V
= 13.6 Vdc
DD
8
10
I
D
= 2.6 Amps
7
3.2 Amps
3.9 Amps
10
6
10
10
5
4
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
Figure 4. MTTF versus Junction Temperature -- CW
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
4
870 MHz NARROWBAND PRODUCTION TEST FIXTURE
C9
C10
C13
C16
V
GG
V
DD
AFT09MS031N
Rev. 0
C14
B1
B2
C15
C11
C12
C2
C7
C3
C5
L2
L1
C1
L3
C4
C6
C8
Figure 5. AFT09MS031NR1 Narrowband Test Circuit Component Layout — 870 MHz
Table 6. AFT09MS031NR1 Narrowband Test Circuit Component Designations and Values — 870 MHz
Part
Description
Part Number
Manufacturer
B1, B2
C1
RF Beads, Long
2743021447
Fair--Rite
3.9 pF Chip Capacitor
ATC100B3R9CT500XT
ATC100B560CT500XT
ATC100B100JT500XT
ATC100B3R6CT500XT
GRM31CR71H225KA88L
C1206C104K1RAC--TU
ATC200B103KT50XT
TPSD226M025R0200
MCGPR35V337M10X16--RH
A03TKLC
ATC
C2, C14, C15
56 pF Chip Capacitors
ATC
C3, C4, C5, C6
10 pF Chip Capacitors
ATC
C7, C8
C9
3.6 pF Chip Capacitors
2.5 μF Chip Capacitor
ATC
Murata
Kemet
ATC
C10, C11
C12
C13
C16
L1
0.1 μF Chip Capacitors
10,000 pF Chip Capacitor
22 μF, 25 V Tantalum Capacitor
330 μF, 35 V Electrolytic Capacitor
8.0 nH, 3 Turn Inductor
18.5 nH, 5 Turn Inductor
5.0 nH, 2 Turn Inductor
AVX
Multicomp
Coilcraft
Coilcraft
Coilcraft
Rogers
L2
A05TKLC
L3
A02TKLC
PCB
0.030″, ε = 3.5
RO4350B
r
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
6
TYPICAL CHARACTERISTICS — 870 MHz
45
40
35
V
= 13.6 Vdc, P = 0.6 W
in
DD
V
= 12.5 Vdc, P = 0.6 W
in
DD
30
25
20
15
V
= 13.6 Vdc, P = 0.3 W
in
DD
V
P
= 12.5 Vdc
= 0.3 W
DD
in
10
5
f = 870 MHz
0
0
0.5
1
1.5
2
2.5
3
4
4.5
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
Figure 7. CW Output Power versus Gate--Source Voltage
19
18.5
18
80
70
60
50
40
30
20
10
0
η
D
V
= 13.6 Vdc, I = 500 mA
DQ
DD
f = 870 MHz
17.5
17
G
ps
16.5
16
P
out
15.5
15
0.01
0.1
P , INPUT POWER (WATTS)
1
2
in
Figure 8. Power Gain, CW Output Power and
Drain Efficiency versus Input Power
V
= 13.6 Vdc, I = 500 mA, P = 31 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
870
0.28 -- j0.71
0.98 -- j0.52
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
50 Ω
50 Ω
Z
Z
load
source
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
760--870 MHz BROADBAND REFERENCE CIRCUIT, 50 OHM SYSTEM
Table 8. 760--870 MHz Broadband Performance (13.6 Vdc, I = 100 mA, T = 25°C, CW)
DQ
A
Frequency
(MHz)
G
η
P1dB
(W)
ps
D
(dB)
15.7
15.7
15.5
(%)
62.0
63.0
61.0
760
820
870
44
37
36
Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type
P
out
(W)
VSWR
Test Voltage, V
Result
DD
870
CW
>65:1 at all
64
17
No Device
Phase Angles
(3 dB Overdrive)
Degradation
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
8
760--870 MHz BROADBAND REFERENCE CIRCUIT
C14
C15
J1
C1
C13
C12
C16
C17
C9
L2
C7
C6
L1
C2
Q1
C4 C5
C3
C11
C10
C8
TO -- 2 7 0 -- 2
Rev. 1
Figure 10. AFT09MS031NR1 Broadband Reference Circuit Component Layout — 760--870 MHz
Table 10. AFT09MS031NR1 Broadband Reference Circuit Component Designations and Values — 760--870 MHz
Part
Description
Part Number
ATC600F5R6BT250XT
ATC600F6R8BT250XT
ATC600F8R2BT250XT
ATC600F120JT250XT
ATC600F100JT250XT
ATC600F300JT250XT
ATC600F220JT250XT
ATC600F241JT250XT
GRM21BR71H104KA01B
GRM21BR72A103KA01B
ATC100A220JT150XT
0805WL6R8KT
Manufacturer
C1, C10, C11, C12
5.6 pF Chip Capacitors
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
C2
6.8 pF Chip Capacitor
8.2 pF Chip Capacitor
12 pF Chip Capacitor
10 pF Chip Capacitor
30 pF Chip Capacitors
22 pF Chip Capacitors
240 pF Chip Capacitors
0.10 μF Chip Capacitor
0.01 μF Chip Capacitor
22 pF Chip Capacitor
6.8 nH Inductor
C3
C4
C5
C6, C7
C8, C9
C13, C16
C14
C15
C17
L1
Murata
Murata
ATC
ATC
L2
17 nH Inductor
0908SQ17NJLC
Coilcraft
Freescale
TE Connectivity
Shengyi
Q1
RF Power LDMOS Transistor
3 Pin
AFT09MS031NR1
J1
AMP--9--146305--0
PCB
0.020″, ε = 4.8
S1000--2, FR4
r
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
9
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
10
TYPICAL CHARACTERISTICS — 760--860 MHz BROADBAND
REFERENCE CIRCUIT
17
66
63
60
57
40
35
30
V
DQ
= 13.6 Vdc, P = 1 W
in
DD
I
= 100 mA
16.5
16
η
D
15.5
15
G
ps
P
out
14.5
14
750
770
790
810
830
850
870
890
f, FREQUENCY (MHz)
Figure 12. Power Gain, CW Output Power and Drain
Efficiency versus Frequency at a Constant Input Power
17
66
64
62
60
37
32
27
V
DQ
= 12.5 Vdc, P = 1 W
in
DD
I
= 100 mA
16.5
16
η
D
15.5
15
G
ps
P
out
14.5
14
750
770
790
810
830
850
870
890
f, FREQUENCY (MHz)
Figure 13. Power Gain, CW Output Power and Drain
Efficiency versus Frequency at a Constant Input Power
AFT09MS031NR1 AFT09MS031GNR1
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 760--870 MHz BROADBAND
REFERENCE CIRCUIT
5
60
50
V
P
= 13.6 Vdc
= 1 W
V
= 13.6 Vdc, P = 1 W
in
DD
DD
V
P
= 12.5 Vdc
= 1 W
in
DD
4
3
2
1
in
V
= 12.5 Vdc, P = 1 W
in
DD
40
30
V
= 13.6 Vdc, P = 0.5 W
V
= 13.6 Vdc
DD
in
DD
V
P
= 12.5 Vdc
= 0.5 W
P
= 0.5 W
DD
in
in
V
P
= 12.5 Vdc
= 0.5 W
DD
20
10
0
in
f = 820 MHz
4
f = 820 MHz
1.6
Detail A
0
0.8
2
0
0.4
V
1.2
2
0
1
3
5
, GATE--SOURCE VOLTAGE (VOLTS)
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
GS
Detail A
Figure 14. CW Output Power versus Gate--Source Voltage
120
18
17
16
70
60
50
40
30
20
10
V
= 13.6 Vdc
= 100 mA
820 MHz
870 MHz
DD
I
DQ
100
80
760 MHz
G
ps
870 MHz
60
15
14
13
12
760 MHz
η
D
40
760 MHz
820 MHz
820 MHz
20
0
P
out
870 MHz
1
0.03
0.1
P , INPUT POWER (WATTS)
2
in
Figure 15. Power Gain, CW Output Power and
Drain Efficiency versus Input Power and
Frequency
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
12
760--870 MHz BROADBAND REFERENCE CIRCUIT
Z = 2 Ω
o
Z
load
f = 870 MHz
f = 760 MHz
f = 760 MHz
f = 870 MHz
Z
source
V
= 13.6 Vdc, I = 100 mA, P = 31 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
760
770
780
790
800
810
820
830
840
850
860
870
Ω
Ω
0.85 -- j1.31
0.80 -- j1.30
0.75 -- j1.28
0.69 -- j1.26
0.65 -- j1.24
0.59 -- j1.21
0.55 -- j1.18
0.51 -- j1.15
0.46 -- j1.11
0.42 -- j1.01
0.39 -- j1.02
0.36 -- j0.97
0.80 -- j0.92
0.78 -- j0.88
0.78 -- j0.85
0.76 -- j0.81
0.76 -- j0.78
0.72 -- j0.75
0.70 -- j0.73
0.67 -- j0.70
0.62 -- j0.66
0.57 -- j0.62
0.52 -- j0.57
0.48 -- j0.52
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
50 Ω
50 Ω
Z
Z
load
source
Figure 14. Broadband Series Equivalent Source and Load Impedance — 760--870 MHz
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
13
PACKAGE DIMENSIONS
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
14
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
15
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
16
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
17
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
18
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
19
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
•
•
•
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
•
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2012
• Initial Release of Data Sheet
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
20
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implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
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E 2012 Freescale Semiconductor, Inc.
Document Number: AFT09MS031N
Rev.0, 5/2012
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KEMET
C1206C104K1RAC7025
Capacitor, Ceramic, Chip, General Purpose, 0.1uF, 100V, ±10%, X7R, 1206 (3216 mm), Sn/NiBar, -55º ~ +125ºC, 7" Reel/Unmarked
KEMET
C1206C104K1RAC7215
Ceramic Capacitor, Multilayer, Ceramic, 100V, 10% +Tol, 10% -Tol, X7R, 15% TC, 0.1uF, Surface Mount, 1206, CHIP
KEMET
C1206C104K1RAC7411
Capacitor, Ceramic, Chip, General Purpose, 0.1uF, 100V, ±10%, X7R, 1206 (3216 mm), Sn/NiBar, -55º ~ +125ºC, 13" Reel/Unmarked
KEMET
C1206C104K1RACAUTO
Ceramic, AUTO-(CxxxxC-AUTO), 0.1 uF, 10%, 100 V, 1206, X7R, SMD, MLCC, Temperature Stable, Automotive Grade
KEMET
C1206C104K1RACAUTO7210
Capacitor, Ceramic, Chip, General Purpose, 0.1uF, 100V, ±10%, X7R, 1206 (3216 mm), Sn/NiBar, -55º ~ +125ºC, 13" Special Reel/Unmarked
KEMET
C1206C104K1RACTM
Capacitor, Ceramic, Chip, General Purpose, 0.1uF, 100V, ±10%, X7R, 1206 (3216 mm), Sn/NiBar, -55º ~ +125ºC, 7" Reel/Marked
KEMET
C1206C104K1RACTU
Capacitor, Ceramic, Chip, General Purpose, 0.1uF, 100V, ±10%, X7R, 1206 (3216 mm), Sn/NiBar, -55º ~ +125ºC, 7" Reel/Unmarked
KEMET
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