AFT21S230S_232S [FREESCALE]
RF Power LDMOS Transistors; RF功率LDMOS晶体管
| 型号： | AFT21S230S_232S |
| 厂家： | 
Freescale |
| 描述： | RF Power LDMOS Transistors |
| 文件： | 总15页 (文件大小：437K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: AFT21S230S_232S
Rev. 1, 11/2012
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
AFT21S230SR3
AFT21S232SR3
These 50 watt RF power LDMOS transistors are designed for cellular base
station applications covering the frequency range of 2110 to 2170 MHz.
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts,
DQ = 1500 mA, Pout = 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%
I
Probability on CCDF.
2110--2170 MHz, 50 W AVG., 28 V
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
2110 MHz
2140 MHz
2170 MHz
(dB)
16.7
17.0
17.2
(%)
30.5
31.0
31.8
7.2
7.1
7.0
--35.7
--35.4
--34.8
-- 1 9
-- 2 0
-- 1 5
Features
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
NI--780S--6: R3 Suffix = 250 Units, 44 mm Tape Width, 13 inch Reel.
NI--780S--2: R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 18.
1
2
6
5
N.C.
VBW
RF /V
in GS
RF /V
out DS
VBW
3
4
N.C.
NI--780S--6
AFT21S230S
(Top View)
Figure 1. Pin Connections
2
1
RF /V
RF /V
in GS
out DS
NI--780S--2
AFT21S232S
(Top View)
Figure 2. Pin Connections
Freescale Semiconductor, Inc., 2012. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
--0.5, +65
--6.0, +10
32, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
--65 to +150
--40 to +150
--40 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
CW Operation @ T = 25C
CW
163
W
C
Derate above 25C
0.79
W/C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
C/W
JC
Case Temperature 80C, 50 W CW, 28 Vdc, I
Case Temperature 86C, 140 W CW , 28 Vdc, I = 1500 mA, 2110 MHz
= 1500 mA, 2110 MHz
0.43
0.38
DQ
(4)
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
B
IV
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V = 65 Vdc, V = 0 Vdc)
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 291 Adc)
V
V
1.5
2.2
0.1
2.0
2.7
0.2
2.5
3.2
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 1500 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
V
(V = 10 Vdc, I = 3.7 Adc)
GS
D
(5)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1500 mA, P = 50 W Avg., f = 2110 MHz,
DD DQ out
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
16.0
29.0
6.7
—
16.7
30.5
7.2
19.0
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
ACPR
IRL
—
dB
dBc
dB
--35.7
-- 1 9
--34.0
-- 1 0
—
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
5. Part internally matched both on input and output.
(continued)
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) I = 1500 mA, f = 2140 MHz
DQ
VSWR 10:1 at 32 Vdc, 269 W CW Output Power
(3 dB Input Overdrive from 182 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1500 mA, 2110--2170 MHz Bandwidth
DD
DQ
(1)
P
@ 1 dB Compression Point, CW
P1dB
—
—
182
—
—
W
out
AM/PM
--19.3
(Maximum value measured at the P3dB compression point across
the 2110--2170 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
AFT21S230S
VBW
—
—
MHz
res
95
60
AFT21S232S
Gain Flatness in 60 MHz Bandwidth @ P = 50 W Avg.
G
—
—
0.5
—
—
dB
out
F
Gain Variation over Temperature
G
0.016
dB/C
(--30C to +85C)
Output Power Variation over Temperature
(--30C to +85C)
P1dB
—
0.007
—
dB/C
(1)
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
3
C1
C22
C5
C2
C4
C8
C13*
C19
C18
R1
R2
C12*
C10*
C11*
C16*
C17
C14*
C6
C20
C21
C15*
C9
C7
C23
C3
AFT21S232S/AFT21S230S
Rev. 0
*C10, C11, C12, C13, C14, C15 and C16 are mounted vertically.
Figure 3. AFT21S230SR3(232SR3) Test Circuit Component Layout
Table 5. AFT21S230SR3(232SR3) Test Circuit Component Designations and Values
Part
Description
470 F, 63 V Electrolytic Capacitor
10 F, 100 V Chip Capacitors
6.8 pF Chip Capacitors
Part Number
Manufacturer
EPCOS
C1
B41694A5477Q7
C2, C3, C4, C5, C6, C7, C22, C23
C5750X7S2A106M
ATC100B6R8BT500XT
ATC100B0R6BT500XT
ATC100B0R3BT500XT
CDR34BX104AKWS
RC1206FR--108R2L
RO4350B
TDK
C8, C9, C10, C11, C12, C13, C14, C15
ATC
C16
0.6 pF Chip Capacitor
ATC
C17
0.3 pF Chip Capacitor
ATC
C18, C19, C20, C21
R1, R2
1 F, 50 V Chip Capacitors
8.2 , 1/4 W Chip Resistors
AVX
Yageo
Rogers
PCB
0.020, = 3.5
r
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS
19.5
19
34
V
= 28 Vdc, P = 50 W (Avg.), I = 1500 mA
out DQ
DD
33
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
18.5 Input Signal PAR = 9.9 dB @ 0.01%
32
Probability on CCDF
18
31
D
17.5
17
30
G
ps
-- 3 2
-- 3 3
-- 3 4
-- 3 5
-- 3 6
-- 3 7
-- 4
-- 2
ACPR
16.5
16
-- 8
-- 2 . 4
-- 2 . 8
-- 3 . 2
-- 3 . 6
-- 4
PARC
-- 1 2
-- 1 6
-- 2 0
-- 2 4
15.5
15
IRL
14.5
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 4. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 50 Watts Avg.
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 1 0
V
= 28 Vdc, P = 172 W (PEP), I = 1500 mA
V
= 28 Vdc, P = 172 W (PEP), I = 1500 mA
DD out DQ
DD
out
DQ
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 2140 MHz
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 2140 MHz
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
IM3--U
IM3--U
IM3--L
IM3--L
IM5--L
IM5--L
IM5--U
IM5--U
IM7--L
IM7--L
IM7--U
IM7--U
1
10
100
200
1
10
TWO--TONE SPACING (MHz)
100
200
TWO--TONE SPACING (MHz)
Figure 5a. Intermodulation Distortion Products
versus Two--Tone Spacing — AFT21S230S
Figure 5b. Intermodulation Distortion Products
versus Two--Tone Spacing — AFT21S232S
1
-- 2 0
40
18
V
= 28 Vdc, I = 1500 mA, f = 2140 MHz
DQ
DD
Single--Carrier W--CDMA 3.84 MHz
Channel Bandwidth
D
0
35
17.5
17
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
ACPR
-- 1
30
25
20
15
10
-- 1 d B = 2 8 W
-- 2 d B = 3 8 W
16.5
16
-- 2
-- 3
-- 3 d B = 4 9 W
G
ps
PARC
15.5
15
-- 4
-- 5
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
10
25
40
55
70
85
P
, OUTPUT POWER (WATTS)
out
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
20
19
18
17
16
15
14
60
0
V
= 28 Vdc, I = 1500 mA, Single--Carrier
DQ
DD
2110 MHz
2140 MHz
2170 MHz
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
50
40
30
20
10
0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
D
G
2170 MHz
ps
ACPR
2110 MHz
2140 MHz
2170 MHz
2140 MHz
2110 MHz
1
10
, OUTPUT POWER (WATTS) AVG.
100
200
P
out
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
21
30
20
V
P
= 28 Vdc
= 0 dBm
= 1500 mA
DD
19
17
15
Gain
IRL
in
I
DQ
10
0
-- 1 0
-- 2 0
-- 3 0
13
11
9
1800 1900 2000 2100 2200 2300
2400 2500 2600
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
6
V
= 28 Vdc, I = 1500 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DQ
DD
Max Output Power
P1dB
P3dB
Max
Linear
Gain (dB)
(1)
AM/PM
()
AM/PM
f
Z
Z
in
Z
load
D
D
source
(%)
55.4
55.1
54.7
(%)
57.0
56.0
56.0
()
(MHz)
()
()
()
(dBm)
54.3
(W)
269
269
269
(dBm)
55.2
(W)
331
331
331
2110
2140
2170
1.20 - j6.00
1.70 - j6.40
1.70 - j6.80
1.20 + j5.90
1.50 + j6.30
1.75 + j6.70
1.50 - j3.90
1.60 - j4.00
1.50 - j4.00
17.7
17.7
17.8
11
10
11
16
15
16
54.3
55.2
54.3
55.2
(1) Load impedance for optimum P1dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
Figure 9. Load Pull Performance — Maximum P1dB Tuning
V
= 28 Vdc, I = 1500 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DQ
DD
Max Drain Efficiency
P1dB
P3dB
Max
Linear
(1)
AM/PM
AM/PM
f
Z
Z
in
Z
load
D
D
source
(%)
64.9
64.2
64.2
()
16
16
17
(%)
66.2
65.4
65.5
()
(MHz)
()
()
()
(dBm)
52.7
(W)
186
191
191
(dBm)
54.3
(W)
269
219
263
Gain (dB)
2110
2140
2170
1.20 - j6.00
1.70 - j6.40
1.70 - j6.80
1.20 + j5.93
1.40 + j6.30
1.80 + j6.80
2.10 - j2.41
1.80 - j2.60
1.70 - j2.60
20.0
19.8
20.0
20
24
22
52.8
53.4
52.8
54.2
(1) Load impedance for optimum P1dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
Figure 10. Load Pull Performance — Maximum Drain Efficiency Tuning
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
-- 1 . 5
-- 1 . 5
-- 2
-- 2 . 5
-- 3
-- 3 . 5
62
51.5
52
60
-- 2
-- 2 . 5
-- 3
50
64
50.5
51
52.5
E
E
53
53.5
-- 3 . 5
-- 4
60
54
P
P
-- 4
58
56
48
50
52
54
-- 4 . 5
-- 4 . 5
0.5
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
3
REAL ()
REAL ()
Figure 11. P1dB Load Pull Output Power Contours (dBm)
Figure 12. P1dB Load Pull Efficiency Contours (%)
-- 1 . 5
-- 1 . 5
19.5
-- 2
-- 2
-- 2 . 5
-- 3
-- 2 6
-- 2 4
-- 2 2
-- 2 0
-- 1 8
19
-- 2 . 5
-- 3
E
E
-- 1 4
18.5
18
17.5
-- 1 6
17
-- 1 2
16.5
16
-- 3 . 5
-- 4
-- 3 . 5
-- 4
-- 1 0
P
P
-- 4 . 5
-- 4 . 5
0.5
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
3
REAL ()
REAL ()
Figure 13. P1dB Load Pull Gain Contours (dB)
Figure 14. P1dB Load Pull AM/PM Contours ()
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Power Gain
Drain Efficiency
Linearity
Output Power
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
8
P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
-- 1 . 5
-- 1 . 5
-- 2
-- 2 . 5
52.5
53
58
51
51.5
52
-- 2
-- 2 . 5
-- 3
60
E
E
53.5
54
54
-- 3
64
-- 3 . 5
-- 4
-- 3 . 5
-- 4
62
P
52
50
48
55
54.5
56
P
58
-- 4 . 5
-- 4 . 5
1
1.5
2
2.5
3
3.5
1
1.5
2
2.5
3
3.5
REAL ()
REAL ()
Figure 15. P3dB Load Pull Output Power Contours (dBm)
Figure 16. P3dB Load Pull Efficiency Contours (%)
-- 1 . 5
-- 1 . 5
17.5
-- 2
-- 2
-- 2 . 5
-- 3
-- 3 0
-- 2 8
-- 2 6
-- 2 4
-- 2 2
-- 2 0
17
-- 2 . 5
-- 3
E
E
16.5
16
-- 1 8
-- 1 6
-- 3 . 5
-- 4
-- 3 . 5
-- 4
15
14.5
14
15.5
P
P
-- 1 4
-- 4 . 5
-- 4 . 5
1
1.5
2
2.5
3
3.5
1
1.5
2
2.5
3
3.5
REAL ()
REAL ()
Figure 17. P3dB Load Pull Gain Contours (dB)
Figure 18. P3dB Load Pull AM/PM Contours ()
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Power Gain
Drain Efficiency
Linearity
Output Power
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
10
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
11
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
12
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
13
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
NI--780S--6: R5 Suffix = 50 Units, 44 mm Tape Width, 13 inch Reel.
NI--780S--2: R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for AFT21S230S and AFT21S232S parts will be available for 2 years after release of
AFT21S230S and AFT21S232S. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in
the R5 tape and reel option. At the end of the 2 year period customers who have purchased this device in the R5 tape and reel
option will be offered AFT21S230S and AFT21S232S in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Oct. 2012
Nov. 2012
Initial Release of Data Sheet
Corrected Tape and Reel tape width from 32 mm to 44 mm, p. 1, 14
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
14
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E 2012 Freescale Semiconductor, Inc.
Document Number: AFT21S230S_232S
Rev. 1,11/2012
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