1812SMS-47NJLC [FREESCALE]
RF Power Field Effect Transistor; 射频功率场效应晶体管
| 型号： | 1812SMS-47NJLC |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistor |
| 文件： | 总11页 (文件大小：748K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6VP11KH
Rev. 7, 4/2010
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to
150 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
MRF6VP11KHR6
•
Typical Pulsed Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA,
P
out = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
1.8--150 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
Duty Cycle = 20%
Power Gain — 26 dB
Drain Efficiency — 71%
RF POWER MOSFET
•
Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak
Power
Features
•
•
•
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
CASE 375D--05, STYLE 1
NI--1230
•
•
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
PART IS PUSH--PULL
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
RF /V
inB GSB
RF /V
outB DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
Unit
Drain--Source Voltage
V
Vdc
Vdc
°C
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
°C
(1,2)
T
J
225
°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
°C/W
Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Case Temperature 67°C, 1000 W CW, 100 MHz
Z
R
0.03
0.13
θ
JC
θ
JC
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Off Characteristics
Gate--Source Leakage Current
I
—
110
—
—
—
—
—
10
—
μAdc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(I = 300 mA, V = 0 Vdc)
V
(BR)DSS
D
GS
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
I
100
5
μAdc
mA
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
—
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(1)
Gate Threshold Voltage
(V = 10 Vdc, I = 1600 μAdc)
V
1
1.63
2.2
3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
(2)
Gate Quiescent Voltage
(V = 50 Vdc, I = 150 mAdc, Measured in Functional Test)
V
1.5
—
3.5
—
DD
D
(1)
Drain--Source On--Voltage
(V = 10 Vdc, I = 4 Adc)
V
0.28
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
3.3
147
506
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
(2)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 1000 W Peak (200 W Avg.), f = 130 MHz,
DD DQ out
100 μsec Pulse Width, 20% Duty Cycle
Power Gain
G
24
69
—
26
71
28
—
-- 9
dB
%
ps
Drain Efficiency
η
D
Input Return Loss
IRL
-- 1 6
dB
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
2
R2
L3
V
V
SUPPLY
B1
L1
BIAS
R1
+
+
+
+
+
+
C1 C2 C3
C4 C5 C6
C7
C8 C9 C10
C11
C13 C14
C15 C16 C17 C18 C19 C20
C21
Z10
Z8
Z12
Z14
Z16
Z4
Z5
Z6
Z7
RF
INPUT
RF
OUTPUT
Z1
Z2
Z3
Z18 Z19
DUT
Z9
C23
Z13
C24
Z15
C25
Z17
J1
J2
L2
C26
C12
Z11
T1
T2
C22
Z1
Z2*
Z3*
Z4, Z5
Z6, Z7, Z8, Z9
Z10, Z11
Z12, Z13
0.175″ x 0.082″ Microstrip
1.461″ x 0.082″ Microstrip
0.080″ x 0.082″ Microstrip
0.133″ x 0.193″ Microstrip
0.500″ x 0.518″ Microstrip
0.102″ x 0.253″ Microstrip
0.206″ x 0.253″ Microstrip
Z14, Z15
Z16*, Z17*
Z18
Z19
PCB
0.116″ x 0.253″ Microstrip
0.035″ x 0.253″ Microstrip
0.275″ x 0.082″ Microstrip
0.845″ x 0.082″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″, ε = 2.55
r
*Line length includes microstrip bends.
Figure 2. MRF6VP11KHR6 Test Circuit Schematic
Table 5. MRF6VP11KHR6 Test Circuit Component Designations and Values
Part
Description
95 Ω, 100 MHz Long Ferrite Bead
47 μF, 50 V Electrolytic Capacitor
22 μF, 35 V Tantalum Capacitor
10 μF, 35 V Tantalum Capacitor
10K pF Chip Capacitors
20K pF Chip Capacitors
0.1 μF, 50 V Chip Capacitors
2.2 μF, 50 V Chip Capacitor
0.22 μF, 100 V Chip Capacitor
1000 pF Chip Capacitors
18 pF Chip Capacitor
Part Number
Manufacturer
Fair--Rite
B1
C1
C2
C3
2743021447
476KXM050M
Illinois Cap
Kemet
Kemet
ATC
T491X226K035AT
T491D106K035AT
ATC200B103KT50XT
ATC200B203KT50XT
CDR33BX104AKYS
C1825C225J5RAC
C1825C223K1GAC
ATC100B102JT50XT
ATC100B180JT500XT
MCGPR63V477M13X26--RH
ATC100B470JT500XT
ATC100B750JT500XT
ATC100B101JT500XT
ATC100B330JT500XT
Copper Foil
C4, C9, C17
C5, C16
ATC
C6, C15
Kemet
Kemet
Kemet
ATC
C7
C8
C10, C11, C13, C14
C12
ATC
C18, C19, C20
470 μF, 63 V Electrolytic Capacitors
47 pF Chip Capacitors
Multicomp
ATC
C21, C22
C23
75 pF Chip Capacitor
ATC
C24, C25
100 pF Chip Capacitors
33 pF Chip Capacitor
ATC
C26
ATC
J1, J2
Jumpers from PCB to T1 and T2
82 nH Inductor
L1
1812SMS--82NJLC
1812SMS--47NJLC
Copper Wire
CoilCraft
CoilCraft
L2
47 nH Inductor
L3*
10 Turn, #18 AWG Inductor, Hand Wound
1 KΩ, 1/4 W Carbon Leaded Resistor
20 Ω, 3 W Chip Resistor
Balun
R1
MCCFR0W4J0102A50
CPF320R000FKE14
TUI--9
Multicomp
R2
Vishay
T1
Comm Concepts
Comm Concepts
T2
Balun
TUO--4
*L3 is wrapped around R2.
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
3
C1
C19
C17
C16
C15
C4
C5
C6
C18
B1
C20
L1
C2 C3
C7
C14
C13
L3, R2*
R1
C8
C9
C21
C22
C10
T2
C11
T1
C24
C23
J2
C25
J1
L2
C12
C26
MRF6VP11KH
Rev. 3
* L3 is wrapped around R2.
Figure 3. MRF6VP11KHR6 Test Circuit Component Layout
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
1000
100
10
100
C
iss
C
oss
T = 200°C
J
T = 175°C
J
T = 150°C
J
Measured with ±30 mV(rms)ac @ 1 MHz
= 0 Vdc
10
V
GS
C
rss
T
= 25°C
C
1
1
0
10
20
30
40
50
1
10
V , DRAIN--SOURCE VOLTAGE (VOLTS)
DS
100
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
Note: Each side of device measured separately.
Figure 5. DC Safe Operating Area
27
80
70
60
50
40
65
64
63
62
61
60
Ideal
P3dB = 61.23 dBm (1327.39 W)
26
25
24
23
22
21
20
G
ps
P1dB = 60.57 dBm (1140.24 W)
Actual
η
D
59
58
30
20
10
V
= 50 Vdc, I = 150 mA, f = 130 MHz
DQ
Pulse Width = 100 μsec, Duty Cycle = 20%
DD
V
= 50 Vdc, I = 150 mA, f = 130 MHz
DQ
Pulse Width = 100 μsec, Duty Cycle = 20%
DD
57
56
10
100
1000 2000
30
31
32
33
34
35
36
37
38
39
P
, OUTPUT POWER (WATTS) PULSED
P , INPUT POWER (dBm) PULSED
in
out
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 7. Pulsed Output Power versus
Input Power
32
28
24
28
24
20
16
I
= 6000 mA
DQ
3600 mA
1500 mA
750 mA
375 mA
50 V
45 V
40 V
35 V
150 mA
V
= 30 V
DD
20
16
I
= 150 mA, f = 130 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
DQ
V
= 50 Vdc, f = 130 MHz
DD
Pulse Width = 100 μsec, Duty Cycle = 20%
12
10
100
1000
2000
0
200
400
600
800
1000 1200 1400 1600
P
, OUTPUT POWER (WATTS) PULSED
P
, OUTPUT POWER (WATTS) PULSED
out
out
Figure 9. Pulsed Power Gain versus
Output Power
Figure 8. Pulsed Power Gain versus
Output Power
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
65
60
55
50
45
27
26
25
24
23
80
70
60
50
T
= --30_C
85_C
C
T
= --30_C
85_C
C
25_C
25_C
G
ps
40
30
20
10
η
D
V
I
= 50 Vdc
= 150 mA
DD
V
I
= 50 Vdc
= 150 mA
DD
22
DQ
DQ
f = 130 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
f = 130 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
21
20
20
25
30
35
40
45
10
100
, OUTPUT POWER (WATTS) PULSED
out
1000 2000
P , INPUT POWER (dBm) PULSED
P
in
Figure 10. Pulsed Output Power versus
Input Power
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power
0.2
0.18
D = 0.7
D = 0.5
0.16
0.14
0.12
0.1
P
0.08
D
t
1
t
0.06
0.04
2
D = Duty Factor = t /t
1
2
t = Pulse Width
1
D = 0.1
t = Pulse Period
2
J
0.02
0
T = P * Z + T
D
JC
C
0.00001 0.0001
0.001
0.01
0.1
1
10
RECTANGULAR PULSE WIDTH (S)
Figure 12. Maximum Transient Thermal Impedance
8
7
6
5
9
10
10
10
10
10
8
10
7
10
6
10
90
110
130
150
170
190
210
230
250
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 1000 W CW, and η = 72%.
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 1000 W Peak, Pulse Width = 100 μsec,
DD
out
D
DD
out
Duty Cycle = 20%, and η = 71%.
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature -- CW
MRF6VP11KHR6
Figure 14. MTTF versus Junction Temperature -- Pulsed
RF Device Data
Freescale Semiconductor
6
f = 130 MHz
Z
source
Z = 10 Ω
o
f = 130 MHz
Z
load
V
= 50 Vdc, I = 150 mA, P = 1000 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
130
1.58 + j6.47
4.6 + j1.85
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
8
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Jan. 2008
Apr. 2008
•
•
Initial Release of Data Sheet
Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS
compliant part number in Table 5, Test Circuit Component Designations and Values, p. 3.
•
•
•
Added Fig. 12, Maximum Transient Thermal Impedance, p. 6
2
3
July 2008
Added MTTF CW graph, Fig. 13, MTTF versus Junction Temperature, p. 6
Sept. 2008
Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is
measured separately, p. 5
•
•
Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5
Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect the correct die size and increased
the MTTF factor accordingly, p. 6
•
•
Corrected Fig. 14, MTTF versus Junction Temperature – Pulsed, to reflect the correct die size and
increased the MTTF factor accordingly, p. 6
4
5
Dec. 2008
July 2009
Fig. 15, Series Equivalent Source and Load Impedance, corrected Z
copy to read “Test circuit
source
impedance as measured from gate to gate, balanced configuration” and Z
impedance as measured from drain to drain, balanced configuration”, p. 7
copy to read “Test circuit
load
•
•
Added 1000 W CW thermal data at 100 MHz to Thermal Characteristics table, p. 1
Changed “EKME630ELL471MK25S” part number to “MCGPR63V477M13X26--RH”, changed R1
Description from “1 KΩ, 1/4 W Axial Leaded Resistor” to “1 KΩ, 1/4 W Carbon Leaded Resistor” and
“CMF601000R0FKEK” part number to “MCCFR0W4J0102A50”, Table 5, Test Circuit Component
Designations and Values, p. 3
•
•
Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect change in Drain Efficiency from
70% to 72%, p. 6
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,
Tools and Software, p. 20
6
7
Dec. 2009
Apr. 2010
•
•
Device frequency range improved from 10--150 MHz to 1.8--150 MHz, p. 1
Reporting of pulsed thermal data now shown using the Z
symbol, Table 2. Thermal Characteristics, p. 1
θ
JC
•
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
10
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Document Number: MRF6VP11KH
Rev. 7,4/2010
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