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元器件品牌
08051J1R0BBT
[FREESCALE]
Gallium Arsenide PHEMT RF Power Field Effect Transistor; 砷化镓PHEMT RF功率场效应晶体管
元器件型号：
08051J1R0BBT
生产厂家：
FREESCALE SEMICONDUCTOR, INC
描述和应用：
Gallium Arsenide PHEMT RF Power Field Effect Transistor
砷化镓PHEMT RF功率场效应晶体管
晶体 晶体管 功率场效应晶体管
PDF文件：
总12页 (文件大小：126K)
下载文档：
下载PDF数据表文档文件
型号参数：08051J1R0BBT参数
查看货源
08051J1R0BS
RF LDMOS Integrated Power Amplifier
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NXP
08051J1R2BBT
Gallium Arsenide PHEMT RF Power Field Effect Transistor
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FREESCALE
08051J2R1BBTTR
Film Capacitor, Silicon Dioxide And Nitride, 100V, 4.7619% +Tol, 4.7619% -Tol, -/+30ppm/Cel TC, 0.0000021uF, Surface Mount, 0805, CHIP, ROHS COMPLIANT
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0
AVX
08051J2R1CBTTR
Film Capacitor, Silicon Dioxide And Nitride, 100V, 11.9048% +Tol, 11.9048% -Tol, -/+30ppm/Cel TC, 0.0000021uF, Surface Mount, 0805, CHIP, ROHS COMPLIANT
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0
AVX
08051J2R2BS
RF LDMOS Integrated Power Amplifier
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156
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2
NXP
08051J2R2CBTTR
Film Capacitor, Silicon Dioxide And Nitride, 100V, 11.3636% +Tol, 11.3636% -Tol, -/+30ppm/Cel TC, 0.0000022uF, Surface Mount, 0805, CHIP, ROHS COMPLIANT
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1
AVX
08051J2R3ABTTR
Film Capacitor, Silicon Dioxide And Nitride, 100V, 2.1739% +Tol, 2.1739% -Tol, -/+30ppm/Cel TC, 0.0000023uF, Surface Mount, 0805, CHIP, ROHS COMPLIANT
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0
AVX
08051J3R9BBT
Gallium Arsenide PHEMT RF Power Field Effect Transistor
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35
FREESCALE
08051J4R4BBTTR
Film Capacitor, Silicon Dioxide And Nitride, 100V, 2.2727% +Tol, 2.2727% -Tol, -/+30ppm/Cel TC, 0.0000044uF, Surface Mount, 0805, CHIP, ROHS COMPLIANT
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0
AVX
08051J4R4CBTTR
Film Capacitor, Silicon Dioxide And Nitride, 100V, 5.6818% +Tol, 5.6818% -Tol, -/+30ppm/Cel TC, 0.0000044uF, Surface Mount, 0805, CHIP, ROHS COMPLIANT
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156
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0
AVX
08051J4R7AASTR
Thin-Film Technology
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156
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20
AVX
08051J4R7AATTR
Thin-Film Technology
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156
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25
AVX
08051J4R7AAWTR
Thin-Film Technology
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156
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15
AVX
08051J4R7ABSTR
Thin-Film Technology
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156
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37
AVX
08051J4R7ABTTR
Thin-Film Technology
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156
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49
AVX
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