FS326E [FORTUNE]
One Cell Lithium-ion/Polymer Battery Protection IC;
| 型号： | FS326E |
| 厂家： | 
Fortune Semiconductor |
| 描述： | One Cell Lithium-ion/Polymer Battery Protection IC 电池 |
| 文件： | 总14页 (文件大小：909K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
REV. 1.2 FS326E+G-DS-12_EN
May 2014
Datasheet
FS326E+G
One Cell Lithium-ion/Polymer Battery Protection IC
Fortune Semiconductor Corporation
富晶電子股份有限公司
23F., No.29-5,Sec. 2, Zhongzheng E. Rd,
Danshui Dist, New Taipei City 251, Taiwan
Tel.：886-2-28094742
Fax：886-2-28094874
www.ic-fortune.com
This manual contins new ct information. Fortune Semiconductor Corporation reserves the rights to
modify the prouct specification without further notice. No liability is assumed by Fortune Semiconductor
Corporation as a rsult of the use of this product. No rights under any patent accompany the sale of the
product.
1. General Description
3. Ordering Information
The FS326E+G battery protection IC is designed to
protect lithium-ion/polymer battery from damage or
degrading the lifetime due to overcharge,
overdischarge, and/or overcurrent for one-cell
lithium-ion/polymer battery powered systems, such
as cellular phones.
FS326E+G
PACKAGE TYPE
SOT-23-6(G stands for Green-Package)
TEMPERATURE RANGE
-40°C~+85°C
The ultra-small package and less required external
components make it ideal to integrate the
FS326E+G into the limited space of battery pack.
The accurate ±40mV overcharging detection voltage
ensures safe and full utilization charging. The very
low standby current drains little current from he cell
while in storage.
OVERCHARGE PROTECTION
4.3V± 40mV
4. Applications
Protection C for One-Cell Lit-Ion
/
Lithium-Polymer Battry Pack
2. Features
Reduction in Board Size due to Miniature
Package SOT-23-6.
Ultra-Low Quiescent Current at 3A (Vcc=3.9V).
Ultra-Low Overdisce Current at 3 μ
A
(Vcc=2.0V).
Precision Overcharotection Voltage 4.3V
40mV
Load Deunction during Overcge
Mode.
Two Detecfor Overcurrent Protec
Deay times are generated by internits. No
eternacapacitors required.
5. Product Name List
Package Overcharge
Overcharge
release
voltage
Overdischarge Overdischarge Overcurrent
Protection
voltage
Protection
voltage
release
voltage
Protection
voltage
Model
SOT-23-6
[VOCP] (V)
[VOCR] (V)
[VODP] (V)
[VODR] (V)
[VOI1] (mV)
FS326E+G FS326E+G 4.3000.040
4.1000.050
2.400.080
3.00.080
15030
6. Pin Confuration and Package Marng Information
Pin No
cription
6
1
5
4
3
1
2
3
4
CS
OC
TD
MOSFET gatectiopin for discharge trol
Input pin for cense, charger detct
MFET gate connection pin for crge control
326E
pin for reduce delay tme
2
5
6
VCC
GND
Power supply, through a resistor (R1)
Ground pin
. . . . .
3 2 6E W
. . .
Top PNo.
Bottom Year
w week, A~Z & A ~ Z
7. Functional Block Diagram
VCC
Short circuit
Detector
VSS
VSS
VSS
VSS
Oscillator
Control
Circuit
Overcharge
Detector
Over current
Detector
vider
Con
Logic
CS
Overdischarg
e Detector
Charger
Detector
GND
GND
Control
Logic
8. Typical Application Circuit
BATT+
R1
VCC
C1
0.1μF
FS326E+G
ND
TD
CS
R2
1k
M1
M2
BATT-
9. Absolute Maximum Ratings
(GND=0V, Ta=25°C unless otherwise specified)
Item
Symbol
Rating
Unit
Input voltage between VCC and GND *
VCC
GND-0.3 to GND+10
V
OC output pin voltage
VOC
VOD
VCS
TOP
TST
VCC -24 to VCC +0.3
GND-0.3 to VCC +0.3
VCC -24 to VCC +0.3
-40 to +85
V
V
OD output pin voltage
CS input pin voltage
V
Operating Temperature Range
Storage Temperature Range
°C
°C
-40 to +125
Note: FS326E+G contains a circuit that will protect it from static discharge; but pleascial
care that no excessive static electriity or voltage whxceeds the limit of tion
circuit will be applied to it.
10. Electrical Characteristics
(Ta=25°C unless otherwise specified)
PARAMETER
TEST CONDITIONS SYMBOL Min
Typ
3.0
Max
6.0
UNIT
μA
Supply Current
VCC=3.9V
VCC=2.0V
FS326E+G
CC
μA
Overdischarge Current
IOD
1.5
3
Overcharge Protection Voltage
Overcharge Release Voltage
Overdischarge Protection Voltage
Overdischarge Release Voltage
Overcurrent Protection Voltage
Short Current Protecage
Overcharge Delay Time
VOCP
VOCR
VODP
VODR
4.26
4.05
2.32
2.9
120
4.30
4.10
2.40
3.00
150
1.35
80
4.34
4.15
2
3.08
180
1.70
200
100
20
V
V
V
OIP
（VOI1）
mV
V
VSIP
（VOI2）
VCC=3.6V
1.00
TOC
TOD
TOI1
TOI2
CHA
VDH
VDL
ms
ms
ms
μs
Overdischame
Overcurrent Delay Time (1)
Overcurrnt Delay Time (2)
VCC=30V
VV
40
10
VCC=3.6V
5
50
Charger Detection Thre
Voltage
-1.2
-0.7
-0.2
V
V
V
V
V
OD Pin Output “H” Voltage
OD Pin Output “L” Voltage
OC Pin Output “H” Voltage
OC Pin Output “L” Voltage
VCC-0.1 VCC-0.02
0. 1
VCC-0.1 VCC-0.02
0.1
0.5
0.5
VCH
VCL
11. Description of Operation
Overcharge Protection
Overcurrent Protection
When the voltage of the battery cell exceeds the
overcharge protection voltage (VOCP) beyond the
overcharge delay time (TOC) period, charging is
inhibited by turning off of the charge control
MOSFET. The overcharge condition is released in
two cases:
In normal mode, the FS326E+G continuously
monitors the discharge current by sensing the
voltage of CS pin. If the voltage of CS pin exceeds
the overcurrent protection voltage (VOIP) beyond
the overcurrent delay time (TOI1) period, the
overcurrent protection circuit operates and
dscharging is inhibited by turning off the discharge
controMOSFET. The overcurrent condition returns
to the normal mode when the load is released or the
impedance between BATT+ and BATT- is larger han
500kΩ. The FS326E+G provides two overcurent
detection leves (0.1V and 1.35two
overcurrent delay time (TOI1 OI2)
corresponto each overcurrent del.
The voltage of the battery cell becomes lower than
the overcharge release voltage (VOCR) through
self-discharge.
The voltage of the battery cell falls bew the
overcharge protection voltage (VOCP) and a load is
connected.
When the battery voltage is above VOCPthe
overcharge condition will not release even a lod is
connected to the pack.
Charge Detection after Overdischarge
Overdischarge Prection
When overdischarge occurse dicharge control
MOSFET turns off and discharging is inhibited.
However, charging is still prmitted through the
prasitic diode of MOSFET. Once the charger is
connected to the battery pack, the FS326E+G
immediately turnon all the timing generation and
detection circuitry. Charging progress is sensed if
the voltagween CS and GND is below charge
detection thshold voltage (VCH).
When the voltage oery cell goes below the
overdischarge protecvoltage (VODP) beyon
the overdischdelay time (TOD) period
discharging by turning off the dise
control MOSfault of overdischar
time is 10ms. of discharging is immedily
released when the voltage of the y cell
becomes higher than overdischarge reoltage
(VODR) hrough charging.
12. Design Guide
changes, the design of the overcurrent threshold
current changes accordingly.
Selection of External Control MOSFET
Because the overcurrent protection voltage is preset,
the threshold current for overcurrent detection is
determined by the turn-on resistance of the charge
and discharge control MOSFETs. The turn-on
resistance of the external control MOSFETs can be
determined by the equation: RON=VOIP/ (2 x IT) (IT
is the overcurrent threshold current). For example, if
the overcurrent threshold current IT is designed to
be 3A, the turn-on resistance of the external control
MOSFET must be 25mΩ. Be aware that turn-n
resistance of the MOSFET changes with
temperature variation due to heat dissipon. It
changes with the voltage between gate and source
as well. (Turn-on resistance of MOSFET increases
as the voltage between gate and source decreases).
As the turn-on resistance of the extenal MOSFET
Suppressing the Ripple and Disturbance
from Charger
To suppress the ripple and disturbance from charger,
connecting R1 and C1 to VCC is recommended.
Protection the CS pin
R2 is used for latch-up protection when charger is
connected under overdischarge condition and
overstress protection at reverse connecting of a
charger.
13. Timing Diagram
Overcharge Condition Load Discharging Normal Condition
Charger
Load
VOCP
VOCR
VODR
VODP
VCC
CS
VCC
GND
VC
VOI1
GND
VCH
TOC
TOC
Overdischarge Condition Charging by a Charger Normal Condition
Charger
Load
VOCP
VOCR
VODR
VODP
VCC
CS
VCC
GND
VC
VI2
GND
VCH
TOD
TOD
Over Current Condition Normal Condition
Charger
Load
VOCP
VOCR
VODR
VODP
VCC
CS
VCC
GND
VC
VOI2
VOI1
GND
TOI1
TOI2
14. Package Outline
Dimension
15. Revision History
Version Date
Page
Description
1.0
1.1
1.2
2009/06/03
2011/09/07
2014/05/22
-
13
2
New release
Revise Package Outline
Revise company address
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