SM5819 [FORMOSA]
Silicon epitaxial planer type; 硅外延平面型
| 型号： | SM5819 |
| 厂家： | 
FORMOSA MS |
| 描述： | Silicon epitaxial planer type |
| 文件： | 总2页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MELF Schottky Barrier Diodes
Formosa MS
SM5817 THRU SM5819
Silicon epitaxial planer type
Features
SM-1
Plastic package has Underwriters Laboratory
FlammabilityClassification 94V-O Utilizing Flame
RetardantEpoxy Molding Compound.
For surface mounted applications.
SOLDERABLE
ENDS
.205(5.2)
.190(4.8)
.024(.60)
.018(.46)
Exceeds environmental standards of MIL-S-19500 /
228
.105(2.7)
.095(2.4)
Low leakage current.
Dimensions in inches and (millimeters)
Mechanical data
Case : Molded plastic, SM-1 (MELF)
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.015 gram
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
IO
MIN.
TYP.
MAX.
1.0
UNIT
A
Forward rectified current
See Fig.2
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Forward surge current
IFSM
25
A
o
VR = VRRM TA = 25 C
1.0
10
mA
mA
Reverse current
IR
o
VR = VRRM TA = 100 C
o
Thermal resistance
Junction to ambient
Rq
80
C / w
pF
JA
Diode junction capacitance
Storage temperature
f=1MHz and applied 4vDC reverse voltage
CJ
110
o
TSTG
-55
+150
C
Operating
*1
*2
*3
*4
MARKING
SYMBOLS
VRRM
VRMS
VR
VF
temperature
CODE
o
( C)
*1 Repetitive peak reverse voltage
*2 RMS voltage
(V)
(V)
(V)
(V)
SM5817
SM5818
SM5819
-
-
-
20
30
40
14
21
28
20
30
40
0.45
0.55
0.60
*3 Continuous reverse voltage
*4 Maximum forward voltage
-55 to +125
RATINGAND CHARACTERISTIC CURVES (SM5817 THRU SM5819)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
1.2
1.0
0.8
0.6
50
10
3.0
1.0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.4
0.2
0
0
20
40
60
80
100
120
140
160
180
200
100
100
Tj=25 C
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
0.1
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
25
20
15
.01
.1
.3
.5
.7
.9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
8.3ms Single Half
Tj=25 C
Sine Wave
10
JEDEC method
5
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
0
50
1
5
10
100
NUMBER OF CYCLES AT 60Hz
FIG.5-TYPICAL JUNCTION CAPACITANCE
10
1.0
.1
350
300
250
200
Tj=75 C
150
100
50
Tj=25 C
0
.01
.01
.05
.1
.5
1
5
10
50
0
20 40 60 80 100 120 140
REVERSE VOLTAGE,(V)
PERCENTAGE RATED PEAK REVERSE VOLTAGE
相关型号：
SM5819-W
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MELF-2
RECTRON
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