LL4148 [FORMOSA]
MINI-MELF Switching Diode - Silicon epitaxial planar type; MINI- MELF开关二极管 - 硅外延平面型
| 型号： | LL4148 |
| 厂家： | 
FORMOSA MS |
| 描述： | MINI-MELF Switching Diode - Silicon epitaxial planar type |
| 文件： | 总2页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MINI-MELF Switching Diode
Formosa MS
LL4148
Silicon epitaxial planar type
Features
SOD-80
Small surface mounting type
High reliability
High speed ( trr < 4 ns )
SOLDERABLE
ENDS
.146(3.7)
.130(3.3)
.012(.30)
.063(1.6)
.055(1.4)
Mechanical data
Dimensions in inches and (millimeters)
Case : Glass, SOD-80 (MINI-MELF)
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.015 gram
o
(AT TA=25 C unless otherwise noted)
MAXIMUM RATINGS
PARAMETER
CONDITIONS
Symbol
VRRM
VR
MIN.
TYP.
MAX.
100
75
UNIT
V
Repetitive peak reverse voltage
Reverse voltage
V
Peak forward surge current
Repetitive peak forward voltage
Forward current
tp= 1 us
IFSM
IFRM
IF
2.0
500
300
150
500
175
+175
A
mA
mA
mA
mW
Average forward current
Power dissipation
VR = 0
IFAV
PV
o
Junction temperature
Storage temperature
Tj
C
o
TSTG
-55
C
o
ELECTRICAL CHARACTERISTICS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
VF
MIN.
0.62
TYP.
MAX.
0.72
1.00
25
UNIT
V
IF = 5mA
IF = 10mA
VR = 20V
Forward voltage
VF
0.86
V
IR
nA
uA
uA
V
o
VR = 20V , Tj = 150 C
Reverse current
IR
50
VR = 75V
IR
5.0
Breakdown current
IR = 100uA , TP/T = 0.01 TP = 0.3ms
VR = 0 , f = 1MHz , VHF = 50mV
VHF = 2V , f = 100MHz
V(BR)
CD
100
Diode capacitance
4.0
pF
%
Rectification efficiency
nR
45
IF = IR = 10mA , IRR = 1mA
IF =10mA, VR =6V, IRR = 0.1 X IR, RL=100OHM
trr
trr
8
4
ns
ns
Reverse recovery time
RATINGAND CHARACTERISTIC CURVES (LL4148)
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
1000
100
10
Tj=25 C
1000
Tj=25 C
Pulse Width 300us
1% Duty Cycle
Scattering Limit
100
10
1
Scattering Limit
1.0
0.1
1
10
100
0
.4
.8
1.2
1.6
2.0
REVERSE VOLTAGE
FORWARD VOLTAGE,(V)
FIG.4 - REVERSE CURRENT
VS JUNCTION TEMPERATURE
FIG.2 - TYPICAL DIODE CAPACITANCE
3.5
3
10
3.0
2.5
2.0
1.5
2
10
10
1.0
0.5
0
1
-1
10
0.1
1
10
100
1000
REVERSE VOLTAGE,(V)
-2
10
0
100
200
o
JUNCTION TEMPERATURE ( C)
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WTE
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