GL34J [FORMOSA]
MINI-MELF glass passivated junction Diodes - Silicon passivated type; MINI- MELF玻璃钝化结二极管 - 硅钝化类型
| 型号： | GL34J |
| 厂家： | 
FORMOSA MS |
| 描述： | MINI-MELF glass passivated junction Diodes - Silicon passivated type |
| 文件： | 总2页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MINI-MELF glass passivated junction Diodes
Formosa MS
GL34A THRU GL34M
Silicon passivated type
DO-213AA
Features
(GL34)
Plastic package has Underwriters Laboratory
FlammabilityClassification 94V-O Utilizing Flame
RetardantEpoxy Molding Compound.
For surface mounted applications.
SOLDERABLE
ENDS
.140(3.6)
.130(3.3)
.015(.40)
.012(.30)
Exceeds environmental standards of MIL-S-19500 /
228
.063(1.6)
.055(1.4)
Low leakage current.
Mechanical data
Dimensions in inches and (millimeters)
Case : Molded plastic, JEDECDO-213AA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.036 gram
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
IO
MIN.
TYP.
MAX.
0.5
UNIT
A
Forward rectified current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Forward surge current
10
A
IFSM
o
VR = VRRM TA = 25 C
5.0
250
uA
uA
Reverse current
IR
o
VR = VRRM TA = 125 C
o
Thermal resistance
Junction to ambient
125
4.0
C / w
pF
RqJA
CJ
Diode junction capacitance
Storage temperature
f=1MHz and applied 4vDC reverse voltage
o
-55
+125
C
TSTG
Operating
*1
*2
*3
*4
VRRM
VRMS
VR
VF
MARKING
temperature
SYMBOLS
CODE
o
( C)
(V)
50
(V)
(V)
(V)
GL34A
GL34B
GL34D
GL34G
GL34J
GL34K
GL34M
-
-
-
-
-
-
-
35
70
50
100
200
400
600
800
1000
100
200
400
600
800
1000
140
280
420
560
700
*1 Repetitive peak reverse voltage
*2 RMS voltage
1.1
-55 to +125
*3 Continuous reverse voltage
*4 Maximum forward voltage
RATINGAND CHARACTERISTIC CURVES (GL34A THRU GL34M)
FIG.2-TYPICAL FORWARD
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
CHARACTERISTICS
10
0.6
0.5
0.4
0.3
3.0
1.0
0.2
0.1
0.1
0
20
40
60
80
100
120
140
160
180
200
TERMINAL TEMPERATURE ( C)
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.01
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
10
0.001
8
.1
.3
.5
.7
.9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
6
8.3ms Single Half
Sine Wave
Tj=25 C
4
JEDEC method
2
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
0
50
1
5
10
100
1000
100
10
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
14
12
10
Tj=100 C
8
6
1.0
4
Tj=25 C
2
0
.1
.01
.05
.1
.5
1
5
10
50
100
0
20 40 60 80 100 120 140
REVERSE VOLTAGE,(V)
PERCENTAGE RATED PEAK REVERSE VOLTAGE
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