FM330-AL [FORMOSA]
Chip Schottky Barrier Diodes - Silicon epitaxial planer type; 芯片肖特基势垒二极管 - 硅外延平面型![FM330-AL](http://pdffile.icpdf.com/pdf1/p00049/img/icpdf/FM330-AL_258777_icpdf.jpg)
型号: | FM330-AL |
厂家: | ![]() |
描述: | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
文件: | 总2页 (文件大小:75K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Chip Schottky Barrier Diodes
Formosa MS
FM320-AL THRU FM3100-AL
Silicon epitaxial planer type
Features
SMA-L
Plastic package has Underwriters Laboratory
FlammabilityClassification 94V-O Utilizing Flame
RetardantEpoxy Molding Compound.
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
For surface mounted applications.
0.110(2.8)
0.094(2.4)
Exceeds environmental standards of MIL-S-19500 /
228
0.181(4.6)
0.165(4.2)
Low leakage current.
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Dimensions in inches and (millimeters)
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
IO
MIN.
TYP.
MAX.
3.0
UNIT
A
Forward rectified current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Forward surge current
IFSM
80
A
o
VR = VRRM TA = 25 C
0.5
20
mA
mA
Reverse current
IR
o
VR = VRRM TA = 125 C
o
Thermal resistance
Junction to ambient
RqJA
CJ
80
C / w
pF
Diode junction capacitance
Storage temperature
f=1MHz and applied 4vDC reverse voltage
250
o
TSTG
-55
+150
C
Operating
*1
*2
*3
*4
MARKING
VRRM
VRMS
VR
VF
temperature
SYMBOLS
CODE
o
( C)
(V)
(V)
(V)
(V)
FM320-AL
FM330-AL
FM340-AL
FM350-AL
FM360-AL
FM380-AL
FM3100-AL
SS32
SS33
SS34
SS35
SS36
SS38
S310
20
30
40
50
60
80
14
21
28
35
42
56
70
20
30
40
50
60
80
100
0.50
-55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
0.75
-55 to +150
0.85
100
RATINGAND CHARACTERISTIC CURVES (FM320-AL THRU FM3100-AL)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
3.0
2.5
2.0
1.5
50
10
3.0
1.0
1.0
0.5
0
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
.01
80
60
40
20
0
.1
.3
.5
.7
.9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
8.3ms Single Half
Sine Wave
Tj=25 C
JEDEC method
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
100
50
1
5
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
10
700
600
500
400
1.0
Tj=75 C
300
200
100
0
Tj=25 C
.1
.01
.01
.05
.1
.5
1
5
10
50
100
0
20 40 60 80 100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
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